HMC690 v04.0709 10 Gbps TRANSIMPEDANCE AMPLIFIER Typical Applications Features The HMC690 is ideal for: Supports data rates up to 11.3 Gbps • SONET OC-192 and SDH STM-64 Transponders 1.25 Kohm differential gain • 10 Gbps Ethernet +3.3 V single power supply • Broadband instrumentation AC or DC coupled outputs • Short, intermediate and long reach optical receiver modules 11 pA/√Hz input referred noise density 3 mA p-p overload Average input power monitoring TRANSIMPEDANCE AMPLIFIERS - CHIP 5 Output offset adjustment Die Size: 0.68 x 1.14 x 0.18mm Functional Diagram General Description The HMC690 is 10 Gbps transimpedance amplifier designed for SONET OC-192 / SDH STM-64, 10GbE and 10Gbps systems employing optical amplifiers. It supports data rates up to 11.3 Gbps. This amplifier provides a differential output voltage that is proportional to an applied current at its input port. This current is typically provided by a photodiode. Operating from a single +3.3V supply, the HMC690 features low input referred noise, and is designed for driving a CDR or a typical transceiver directly. The RSSI output can be used for monitoring average input power. This device also features a DC offset control, which enables output signal level adjustment for asymmetrical signals. Additional features include an integrated 300Ω filter resistor for photo-diode supply voltage and an extended linear range[2] option. Electrical Specifi cations, TA = +25° C, Vcc1 = Vcc2 = +3.3V [1] Parameter Conditions Min. Typ. Max. Units AC Specifications Max Data Rate Small Signal Transimpedance (ZT) Output Amplitude Differential peak-to-peak Small Signal Zt BW 11.3 Gbps Differential p-p @ 500 MHz 1.1 1.25 1.55 For IIN > 1 mA 430 500 560 kOhm mV 3-dB Upper LImit 7.5 GHz Noise Density @ 1 GHz 11.2 13.5 pA/√Hz Noise Density @ 5 GHz 13.4 14.7 pA/√Hz @ 8 GHz Bandwidth 1.0 Input Referred Noise Density Input Referred RMS Noise Added p-p Deterministic Jitter Random Jitter IIN > 1 mA Rise Time 20 - 80% 17 uA rms 10 ps 300 500 fs rms 21 25 ps [1] Lin_en Open [2] Please see Pin Description table for further explanation of the extended linear range option available on Pin 9. 5-2 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC690 v04.0709 10 Gbps TRANSIMPEDANCE AMPLIFIER Electrical Specifi cations (Conditions) Conditions Min. Typ. Max. 22 28 Fall Time 80% - 20% 19 Output Return Loss F<10 GHz 10 Units ps dB Zt Group Delay Variation ±20 ps Linear Input Range 300 uA p-p 3 mA p-p -20 dBm Input Overdrive @ 10 Gbps (P = 0.9A/W, re = 9 dB, BER = 1e-12) Optical Sensitivity [1] DC Specifications Power Supply 3.0 3.3 3.6 V Supply Current 77 92 106 mA OFF ADJ Sensitivity 780 RSSI Sensitivity mV/V -1 Open Circuit Input DC Level mA/V 0.95 1.1 V [1] Optical receiver sensitivity depends on packaging, photodiode type, BER value and input signal eye quality. Photodiode Specifi cation Assumptions Photodiode Capacitance: (Cpd) = 220 fF Photodiode and bond wire parasitic inductance: (Ls) = 800 pH Photodiode Resistance: (Rs) = 20 Ohm Photodiode Responsivity: (p) = 0.8 A/W Differential Output Voltage vs. Temperature DIFFERENTIAL OUTPUT AMPLITUDE (mV) DIFFERENTIAL OUTPUT AMPLITUDE (mV) Differential Output Voltage vs. Input Current 600 500 400 300 200 100 0 0 500 1000 1500 2000 2500 PEAK TO PEAK INPUT CURRENT (uA) 3000 5 515 505 495 TRANSIMPEDANCE AMPLIFIERS - CHIP Parameter 485 475 -60 -40 -20 0 20 40 60 80 100 TEMPERATURE (deg C) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5-3 HMC690 v04.0709 10 Gbps TRANSIMPEDANCE AMPLIFIER Peak to Peak Jitter vs. Peak to Peak Input Current [2] RMS Jitter vs. Input Current [1] 3.5 25 PEAK TO PEAK JITTER (ps) RMS JITTER (ps) 3 2.5 2 1.5 1 20 15 10 5 0.5 5 0 0 0 200 400 600 800 1000 1200 1400 1600 1800 0 500 1500 2000 2500 3000 Fall Time vs. Peak to Peak Input Current 30 30 25 25 FALL TIME (ps) RISE TIME (ps) 1000 PEAK TO PEAK INPUT CURRENT (uA) Rise Time vs. Peak to Peak Input Current 20 15 10 5 20 15 10 5 0 0 0 500 1000 1500 2000 2500 3000 0 500 PEAK TO PEAK INPUT CURRENT (uA) 1000 1500 2000 2500 3000 PEAK TO PEAK INPUT CURRENT (uA) Transimpedance vs. Frequency Over Temperature [3] Output Return Loss vs. Frequency Over Temperature [3] 70 20 60 10 RETURN LOSS (dB) TRANSIMPEDANCE (dB-Ohm) TRANSIMPEDANCE AMPLIFIERS - CHIP PEAK TO PEAK INPUT CURRENT (uA) 50 40 +25C +85C - 55C 30 20 +25C +85C - 55C 0 -10 -20 10 -30 0 1 2 3 4 5 6 FREQUENCY (GHz) 7 8 9 10 1 2 3 4 5 6 7 8 9 FREQUENCY (GHz) [1] Measured with 10 Gbps 10101 pattern with an estimated bondwire parasitic inductance of 1 nH, source jitter not de-embedded. [2] Measured with PRBS 2ˆ15-1 pattern at 10 Gbps with an estimated bondwire parasitic inductance of 1 nH. Source jitter not de-embedded. [3] Single-Ended OUTN 5-4 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 10 HMC690 v04.0709 10 Gbps TRANSIMPEDANCE AMPLIFIER RSSI Output Voltage vs. Input Current Over Temperature Output Offset Voltage vs. DC Offset Control Voltage Over Temperature 0.6 3 0.4 OUTPUT OFFSET (V) 3.5 2 1.5 +25C +85C - 55C 1 0.2 0 +25C +85C - 55C -0.2 -0.4 0.5 0 0 200 400 600 800 1000 1200 1400 INPUT CURRENT (uA) -0.6 1.6 1.8 2 2.2 2.4 2.6 2.8 3 3.2 5 DC OFFSET CONTROL VOLTAGE (V) Eye Diagram [4] TRANSIMPEDANCE AMPLIFIERS - CHIP RSSI (V) 2.5 [1] Measured with 10 Gbps 10101 pattern with an estimated bondwire parasitic inductance of 1 nH, source jitter not de-embedded. [2] Measured with PRBS 2ˆ15-1 pattern at 10 Gbps with an estimated bondwire parasitic inductance of 1 nH. Source jitter not de-embedded. [3] Single-Ended OUTN [4] Output Eye measured on Eval board with 1 mA p-p input current. (10 Gbps), 25C, 3.3V, 2ˆ23-1 pattern For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5-5 HMC690 v04.0709 10 Gbps TRANSIMPEDANCE AMPLIFIER Supply Current vs. Supply Voltage Over Temperature SUPPLY CURRENT (mA) 120 110 100 90 80 +25C +85C - 55C 70 5 60 3.1 3.2 3.3 3.4 3.5 TRANSIMPEDANCE AMPLIFIERS - CHIP SUPPLY VOLTAGE (V) 5-6 Optical Sensitivity Calculation Optical sensitivity is determined from the input-referred rms noise current, IN. To achieve a bit error rate of 1E-12 , the signal-to-noise ratio must be 14:1. S = 10 log I x ( SNR 2 N x re + 1 re - 1 ) x 1000 dBm Where S = sensitivity (dBm) SNR = signal to noise ratio (dB) IN = input-referred rms noise current (A) = photodetector responsitivity (A/W) = extinction ratio (dB) re Optical Minimum Output Swing at Sensitivity Limit Calculation The typical optical sensitivity is -19 dBm. At the input level, the voltage swing at output of the HMC690 is calculated as follows: Save = 10 log r +1 x ( OMA ) 2 r -1 e e Where Save = average sensitivity (dBm) OMA = optical modulation amplitude (Wp-p) re = extinction ratio (dB) For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC690 v04.0709 10 Gbps TRANSIMPEDANCE AMPLIFIER Absolute Maximum Ratings 4V Off_adj Voltage 4V Lin_EN Voltage 4V Continuous Input Current 8 mA Junction Temperature 125 °C Continuous Pdiss (T=85 °C) (derate 9 mW/ °C Above +85 °C 0.36 W Thermal Resistance (Junction to die bottom) 111 °C/W Storage Temperature -65 to 120 °C Operating Temperature -40 to +85 °C 5 Outline Die Packaging Information [1] Standard Alternate WP-26 (Waffle Pack) [2] TRANSIMPEDANCE AMPLIFIERS - CHIP Supply Voltage [1] Refer to the “Packaging Information” section for die packaging dimensions. [2] For alternate packaging information contact Hittite Microwave Corporation. For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5-7 HMC690 v04.0709 10 Gbps TRANSIMPEDANCE AMPLIFIER Pad Descriptions Pad Number Function Description 1, 6, 13 GND Ground connection for TIA. 2 TEST Test Input. This pad is connected internally to IN thru 1kΩ. No external connection required. 3 IN TIA Input. 4 FILTER Provides bias voltage for photo diode (PD) thru a 300Ω resistor for Vcc1. 5, 7 Vcc1 Power Supply for input stage and PD. 8, 15 Vcc2 Power supply for output buffers. 9 Lin_EN HMC690 has an extended linear range feature. With this feature disabled (pin 9 floating), the HMC690 operates linearly for inputs less than 300 μAp-p. For input currents greater than 300 μAp-p, the HMC690 begins to operate within a saturated region. For input currents greater than 1 mA-p-p, the output is fully saturated. Enabling (pin 9 connected to 3.3V) this feature increases linear range of the device up to 350 μA increasing nominal supply current from 92 mA to 98 mA 10 Off_adj DC offset control. Voltage at this pad sets output DC offset. When it is floating DC offset is at 0V. 11 OUTP Non-inverted data output with 50Ω back termination. 12 OUTN Inverted data output with 50Ω back termination. 14 RSSI Received signal strength indicator. This pin provides a voltage proportional to the DC input current. This voltage should be monitored during assembly to optimally align the PD in the optical environment. TRANSIMPEDANCE AMPLIFIERS - CHIP 5 5-8 Interface Schematic For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC690 v04.0709 10 Gbps TRANSIMPEDANCE AMPLIFIER Pad Descriptions (Continued) Pad Number Function 16 CL2 17 CL1 Description Interface Schematic Connect a capacitor to ground to increase the on-chip DC-cancellation loop time constant. 0.1 μF is recommended. Application Circuit For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com TRANSIMPEDANCE AMPLIFIERS - CHIP 5 5-9 HMC690 v04.0709 10 Gbps TRANSIMPEDANCE AMPLIFIER Assembly Diagram TRANSIMPEDANCE AMPLIFIERS - CHIP 5 5 - 10 For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com HMC690 v04.0709 10 Gbps TRANSIMPEDANCE AMPLIFIER Mounting & Bonding Techniques for Millimeterwave MMICs 50 Ohm Microstrip transmission lines on 0.25mm (10 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). Microstrip substrates should be placed as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm to 0.152 mm (3 to 6 mils). 0.18mm (0.007”) Thick MMIC Ribbon Bond 0.076mm (0.003”) RF Ground Plane Handling Precautions Follow these precautions to avoid permanent damage. Storage: All bare die are placed in either Waffle or Gel based ESD protective containers, and then sealed in an ESD protective bag for shipment. Once the sealed ESD protective bag has been opened, all die should be stored in a dry nitrogen environment. 0.25mm (0.010”) Thick Alumina Thin Film Substrate Figure 1. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against ESD strikes. Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. Mounting The chip is not back-metallized and should be die mounted with epoxy. The mounting surface should be clean and flat. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer’s schedule. Wire Bonding RF bonds made with two 1 mil wires are recommended. These bonds should be thermosonically bonded with a force of 40-60 grams. DC bonds of 0.001” (0.025 mm) diameter, thermosonically bonded, are recommended. Ball bonds should be made with a force of 40-50 grams and wedge bonds at 18-22 grams. All bonds should be made with a nominal stage temperature of 150 °C. A minimum amount of ultrasonic energy should be applied to achieve reliable bonds. All bonds should be as short as possible, less than 12 mils (0.31 mm). For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com 5 TRANSIMPEDANCE AMPLIFIERS - CHIP The die should be attached directly to the ground plane with epoxy (see HMC general Handling, Mounting, Bonding Note). 5 - 11