ASJE1200R063

ADVANCE INFORMATION SiC JFET
ASJE1200R063
Normally-OFF Trench Silicon
Carbide Power JFET
BVDS
FEATURES:
Die Inside
RDS(ON)max
0.063
V
:
ETS,typ
440
μJ
• Hermetic TO-258 Packaging
• 200°C Maximum Operating Temperature (for 260oC Contact Factory)
• Available Screening:
- MIL-PRF-19500 Equivalent
- Space Level
- MIL-STD-750 Methods & Conditions
• Inherent Radiation Tolerance >100K TID
• Positive Temperature Coefficient for Ease of Paralleling
• Compatible with Standard Gate Driver ICs
• Temperature Independent Switching Behavior
4
• Extremely Fast Switching
• 1200 Volt Drain-Source Blocking Voltage
• RDS(on)max of 0.063 
• Voltage Controlled
• Low Gate Charge
• Low Intrinsic Capacitance
APPLICATIONS:
ProductSummary
1200
D (2,4)
G (1)
TO-258
S (3)
• Satellite Solar Inverters
• Mil Spec Power Supplies
- Switch Mode
- Uninterrupted
• Jet Engine Electronics
• Down-hole Electronics (Motor / Compressor Control)
123
Internal Schematic
Non-isolated tab version shown.
For isolated tab version, tab (4)
is No Connect.
MAXIMUM RATINGS
Parameter
Symbol
ID,Tj=125
Conditions
Tj=125°C
Value
30
ID,Tj=175
Tj=175°C
20
PulsedDrainCurrent(1)
ShortCircuitWithstandTime
IDM
Tc=25°C
60
A
tSC
VDD<800V,TC<125°C
50
μS
PowerDissipation
PD
Tc=25°C
250
W
GateͲSourceVoltage
VGS
Ͳ15to+3
V
ContinuousDrainCurrent
OperatingandStorageTemperature
LeadTemperatureforSoldering
Static
AC
(2)
A
Ͳ15to+15
Tj,Tj,stg
Tsold
Unit
1/8"fromcase<10s
V
Ͳ55to+200*
o
260
o
C
C
(1)Limitedbypulsewidth
(2)RgEXT=0.5ohm,tp<200ns
*Contactfactoryfor260oC
THERMAL CHARACTERISTICS
Value
Parameter
ThermalResistance,junctionͲtoͲcase
ThermalResistance,junctionͲtoͲambient
ASJE1200R063
Rev. 0.1 06/11
Symbol
Rth,JC
Typ
Ͳ
Max
TBD
Rth,JA
Ͳ
TBD
Unit
°C/W
For more products and
information, please visit our
website at www.micross.com
Micross Components reserves the right to change products or specifications without notice.
1
ADVANCE INFORMATION SiC JFET
ASJE1200R063
ELECTRICAL CHARACTERISTICS
Parameter
Symbol
Conditions
Min
Value
Typ
Max
Unit
OffCharacteristics
DrainͲSourceBlockingVoltage
TotalDrainLeakageCurrent
TotalGateReverseLeakage
BVDS
IDSS
IGSS
VGS=0V,ID=600ʅA
1200
Ͳ
Ͳ
VDS=1200V,VGS=0V,Tj=25oC
Ͳ
200
1200
VDS=1200V,VGS=0V,Tj=175oC
VDS=1200V,VGS=Ͳ15V,
Ͳ
600
2000
Ͳ
2
Ͳ
Tj=25oC
VDS=1200V,VGS=Ͳ15V,
V
μA
Tj=175oC
VGS=Ͳ15V,VDS=0V
Ͳ
20
Ͳ
Ͳ
Ͳ0.2
Ͳ0.6
VGS=Ͳ15V,VDS=1200V
Ͳ
Ͳ0.2
Ͳ
Ͳ
0.045
0.063
Ͳ
0.11
1.15
1.4
Ͳ
1.75
V
Ͳ
mA
mA
OnCharacteristics
GateThresholdVoltage
VGS(th)
ID=12A,VGS=3V,
Tj=25°C
ID=12A,VGS=3V,
Tj=125°C
VDS=1V,ID=34mA
GateForwardCurrent
IGFWD
VGS=3V
Ͳ
400
RG
f=1MHz,drainͲsourceshorted
Ͳ
4
Ͳ
:
RG(on)
VGS>2.7V;SeeFigure5
Ͳ
0.25
Ͳ
:
Ͳ
1220
Ͳ
Ͳ
180
Ͳ
Ͳ
169
Ͳ
Ͳ
100
Ͳ
Ͳ
15
Ͳ
Ͳ
12
Ͳ
Ͳ
35
Ͳ
Ͳ
30
Ͳ
Ͳ
160
Ͳ
Ͳ
280
Ͳ
DrainͲSourceOnͲresistance
GateResistance
RDS(on)
DynamicCharacteristics
InputCapacitance
Ciss
OutputCapacitance
Coss
ReverseTransferCapacitance
Crss
EffectiveOutputCapacitance,
energyrelated
Co(er)
SwitchingCharacteristics
TurnͲOnDelay
ton
RiseTime
tr
TurnͲOffDelay
toff
FallTime
tf
TurnͲOnEnergy
Eon
TurnͲOffEnergy
Eoff
VDD=100V
VDS=0Vto480V,
VGS=0V
VDS=600V,ID=24A,
InductiveLoad,TJ=25oC
GateDriver=+15V,Ͳ10V,
RgEXT=2.5ohm
SeeFigure15fortypicalgatedrive/
inductiveloadswitchingcircuit.
:
TotalSwitchingEnergy
Ets
Ͳ
440
Ͳ
TurnͲOnDelay
ton
Ͳ
15
Ͳ
RiseTime
tr
Ͳ
15
Ͳ
TurnͲOffDelay
toff
Ͳ
35
Ͳ
FallTime
tf
Ͳ
30
Ͳ
Ͳ
180
Ͳ
Ͳ
280
Ͳ
Ͳ
460
Ͳ
Ͳ
60
Ͳ
Ͳ
2
Ͳ
Ͳ
49
Ͳ
TurnͲOnEnergy
Eon
TurnͲOffEnergy
Eoff
TotalSwitchingEnergy
Ets
TotalGateCharge
Qg
GateͲSourceCharge
Qgs
GateͲDrainCharge
Qgd
ASJE1200R063
Rev. 0.1 06/11
VDS=600V,ID=24A,
InductiveLoad,TJ=150oC
GateDriver=+15V,Ͳ10V,
RgEXT=2.5ohm
SeeFigure15fortypicalgatedrive/
inductiveloadswitchingcircuit.
VDS=600V,ID=10A,
VGS=+2.5V
pF
ns
μJ
ns
μJ
nC
Micross Components reserves the right to change products or specifications without notice.
2
ADVANCE INFORMATION SiC JFET
ASJE1200R063
Figure 1. Typical Output Characteristics
ID = f(VDS); Tj = 25 °C; parameter: VGS
Figure 2. Typical Output Characteristics
ID = f(VDS); Tj = 125 °C; parameter: VGS
40
ID, Drain-Source Current (A)
ID, Drain-Source Current (A)
80
70
3.0 V
60
2.5 V
50
40
30
2.0 V
20
10
1.5 V
2
4
VDS, Drain-Source Voltage (V)
2.5 V
25
20
2.0 V
15
10
1.5 V
5
0
6
2
6
Figure 4. Typical Transfer Characteristics
ID = f(VGS); VDS = 5V
24
60
ID, Drain-Source Current (A)
3.0 V
21
2.5 V
18
15
2.0 V
12
9
6
1.5 V
3
0
0
1
2
3
4
5
50
40
30
20
10
0
0.00
6
0.50
VDS, Drain-Source Voltage (V)
0.60
RDS(on), Drain-Source On-resistance
0.80
o
175 C
25oC
175oC
2
3
4
5
6
0.40
25oC
0.20
0.00
2.00
2.50
3.00
0.35
0.30
150oC
0.25
0.20
125oC
0.15
0.10
25oC
0.05
0.00
1.5
2.0
2.5
3.0
0
VGS, Gate-Source Voltage (V)
ASJE1200R063
Rev. 0.1 06/11
1.50
Figure 6. Drain-Source On-resistance
RDS(on) = f(ID); VGS = 3.0; parameter: Tj
1.00
12
10
8
6
4
2
0
1.00
VGS, Gate-Source Voltage (V)
Figure 5. Gate-Source Current
IGS = f(VGS); parameter: Tj
IGS, Gate-Source Current (A)
4
VDS, Drain-Source Voltage (V)
Figure 3. Typical Output Characteristics
ID = f(VDS); Tj = 175°C; parameter: VGS
ID, Drain-Source Current (A)
3.0 V
30
0
0
0
35
10
20
30
40
ID, Drain Current (A)
Micross Components reserves the right to change products or specifications without notice.
3
ADVANCE INFORMATION SiC JFET
ASJE1200R063
Figure 7. Drain-Source On-resistance
RDS(ON) = f(Tj); parameter: IGS
Figure 8. Drain-Source On-resistance
RDS(ON) = f(IGS); Tj = 25oC
RDS(on), Drain-Source On-resistance (ȍ)
RDS(on), Drain-Source On-resistance (ȍ)
0.16
0.14
200mA
1000mA
0.12
0.10
0.08
0.06
0.04
0.02
0.00
0
50
100
150
0.052
0.051
0.050
0.049
0.048
0.047
0.046
0.045
0.044
0.043
0.042
0.1
200
Figure 9. Typical Capacitance
C = f(VDS); VGS = 0 V; f = 1 MHz
100.0
1000.0
3.0
VGS, Gate-Source Voltage (V)
C, Capacitance (pF)
10.0
Figure 10. Gate Charge
Qg = f(VGS); VDS = 600V; ID = 5A, Tj = 25oC
1.E+04
Ciss
1.E+03
1.E+02
Coss
Crss
1.E+01
2.5
2.0
1.5
1.0
0.5
0.0
0
300
600
900
1200
0
15
30
VDS, Drain-Source Voltage (V)
1E-03
175oC
1.00
Typical
ID, Drain Leakage Current (A)
-1.5mV/oC
Max
60
Figure 12. Drain-Source Leakage
ID = f(VDS); VGS = 0V; parameter: Tj
1.50
1.25
45
Qg, Total Gate Charge (nC)
Figure 11. Gate Threshold Voltage
Vth = f(Tj)
VTH, Gate Threshold Voltage (V)
1.0
IGS, Gate-Source Current (mA)
Tj, Junction Temperature (°C)
0.75
1E-04
1E-05
125oC
1E-06
1E-07
25oC
1E-08
0.50
0
50
100
150
1E-09
200
0
Tj, Junction Temperature (oC)
ASJE1200R063
Rev. 0.1 06/11
300
600
900
1200
BVDS, Drain-Source Blocking Voltage (V)
Micross Components reserves the right to change products or specifications without notice.
4
ADVANCE INFORMATION SiC JFET
ASJE1200R063
Figure 13. Switching Energy Losses
Figure 14. Switching Energy Losses
Es = f(ID); VDS = 600V; VGD = +15V/-10V, RGEXT = 2.5ohm
ES = f(RGEXT); VDS = 600V; ID = 24A, VGD = +15V/-10V
1000
Tj = 25oC
Tj = 150oC
600
Tj = 25oC
Tj = 150oC
900
ETS
E, Switching Energy (uJ)
E, Switching Energy (uJ)
700
500
400
EOFF
300
EON
200
100
800
ETS
700
600
EOFF
500
400
EON
300
200
100
0
0
0
6
12
18
24
30
0
36
ID, Drain Current (A)
3
6
9
12
RgEXT, External Gate Resistance, (ȍ)
Figure 15. Inductive Load Switching Circuit
ASJE1200R063
Rev. 0.1 06/11
Micross Components reserves the right to change products or specifications without notice.
5
ADVANCE INFORMATION SiC JFET
ASJE1200R063
MECHANICAL DRAWING
$IA
"3#
"3#
4YP
NOTE:
1. Dimensions in mm (inches)
2. Controlling dimensions (inches)
ORDERING INFORMATION
BasePartNumber
ASJE1200R063
Configuration
Blank=NonͲisolatedTab
S=IsolatedTab
Package
JunctionTemp.Range
M=TOͲ258 Ͳ
EL
EX
TempRanges:
EL=ElevatedTemp.Range,Ͳ55oCto200oC(TJ)
Processing
Blank
/V
/S
EX=ExtremeTemp.Range,Ͳ55oCto260oC(TJ)(Consultfactory)
Processing:
ExamplePartNumbers:
Blank=Commercial/StandardProcessing
MILͲPRFͲ19500EquivalentScreeningAvailableperSCD
/V=JANTXMILͲPRFͲ19500Equivalent(futurestandardoffering)
/S=JANSMILͲPRFͲ19500Equivalent(futurestandardoffering)
ASJE1200R063MͲEL
ASJE1200R063SMͲEX
has commercial plastic versions of this product available. Please refer to the SemiSouth website
http://www.semisouth.com/products/products.html for datasheet specifications and ordering information. The
SemiSouth part number is SJEP120R063 and is supplied in a TO-247 plastic package.
ASJE1200R063
Rev. 0.1 06/11
Micross Components reserves the right to change products or specifications without notice.
6
ADVANCE INFORMATION SiC JFET
ASJE1200R063
DOCUMENT TITLE
Normally-OFF Trench Silicon Carbide Power JFET
Rev #
0.0
History
Initial Release
Release Date
December 2010
Status
Advance Information
0.1
Replaced TO-257 package
with TO-258 package
June 2011
Advance Information
ASJE1200R063
Rev. 0.1 06/11
Micross Components reserves the right to change products or specifications without notice.
7