ONSEMI NTD5806N

NTD5806N
Power MOSFET
40 V, 33 A, Single N−Channel, DPAK/IPAK
Features
•
•
•
•
Low RDS(on)
High Current Capability
Avalanche Energy Specified
These are Pb−Free Devices
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RDS(on) MAX
V(BR)DSS
Applications
26 mW @ 4.5 V
40 V
• CCFL Backlight
• DC Motor Control
• Power Supply Secondary Side Synchronous Rectification
ID MAX
33 A
19 mW @ 10 V
D
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
40
V
Gate−to−Source Voltage − Continuous
VGS
"20
V
Gate−to−Source Voltage
− Non−Repetitive (tp < 10 mS)
VGS
"30
V
ID
33
A
Power Dissipation
(RqJC) (Note 1)
TC = 25°C
Steady
State
Pulsed Drain Current
TC = 100°C
TC = 25°C
tp = 10 ms
Operating Junction and Storage Temperature
Source Current (Body Diode)
Single Pulse Drain−to−Source Avalanche
Energy (VDD = 50 V, VGS = 10 V, RG = 25 W,
IL(pk) = 28 A, L = 0.1 mH, VDS = 40 V)
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
4
4
23
PD
40
W
IDM
67
A
TJ, Tstg
−55 to
175
°C
IS
33
A
EAS
39
mJ
TL
260
°C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
THERMAL RESISTANCE MAXIMUM RATINGS
Parameter
S
N−CHANNEL MOSFET
Symbol
Value
Unit
°C/W
Junction−to−Case (Drain)
RqJC
3.7
Junction−to−Ambient − Steady State (Note 1)
RqJA
57.5
1. Surface−mounted on FR4 board using 1 in sq pad size
(Cu area = 1.127 in sq [1 oz] including traces.
1 2
3
1
DPAK
CASE 369C
(Surface Mount)
STYLE 2
2
3
IPAK
CASE 369D
(Straight Lead
DPAK)
MARKING DIAGRAMS
& PIN ASSIGNMENT
4
Drain
4
Drain
YWW
58
06NG
Continuous Drain
Current (RqJC)
(Note 1)
G
YWW
58
06NG
Parameter
2
1 Drain 3
Gate Source
Y
WW
5806N
G
1 2 3
Gate Drain Source
= Year
= Work Week
= Device Code
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 5 of this data sheet.
© Semiconductor Components Industries, LLC, 2010
February, 2010 − Rev. 3
1
Publication Order Number:
NTD5806N/D
NTD5806N
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise noted)
Symbol
Test Condition
Min
Typ
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
40
45.5
V
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/TJ
29.5
mV/°C
Parameter
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
VGS = 0 V,
VDS = 40 V
TJ = 25°C
1.0
TJ = 150°C
100
IGSS
VDS = 0 V, VGS = ±20 V
VGS(TH)
VGS = VDS, ID = 250 mA
mA
±100
nA
2.5
V
ON CHARACTERISTICS (Note 2)
Gate Threshold Voltage
Negative Threshold Temperature
Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
RDS(on)
1.4
5.8
mV/°C
VGS = 10 V, ID = 15 A
12.7
19
VGS = 4.5 V, ID = 10 A
17.8
26
mW
CHARGES, CAPACITANCES AND GATE RESISTANCES
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
pF
860
VGS = 0 V, f = 1.0 MHz,
VDS = 25 V
130
100
Total Gate Charge
QG(TOT)
17
Threshold Gate Charge
QG(TH)
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
4.5
td(on)
10.6
VGS = 10 V, VDS = 20 V,
ID = 30 A
38
nC
0.95
3.4
SWITCHING CHARACTERISTICS (Note 3)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(off)
VGS = 4.5 V, VDD = 20 V,
ID = 30 A, RG = 2.5 W
93.7
14.2
tf
4.3
td(on)
8.0
tr
49
td(off)
VGS = 10 V, VDD = 20 V,
ID = 30 A, RG = 2.5 W
tf
ns
ns
19.8
2.6
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
VSD
Reverse Recovery Time
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 10 A
TJ = 25°C
0.86
TJ = 150°C
0.69
18.8
VGS = 0 V, dIs/dt = 100 A/ms,
IS = 30 A
QRR
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2
V
ns
11.8
7.0
10.9
2. Pulse Test: Pulse Width ≤ 300 ms, Duty Cycle ≤ 2%.
3. Switching characteristics are independent of operating junction temperatures.
1.2
nC
NTD5806N
TYPICAL CHARACTERISTICS
70
60
4.5 V
50
VGS = 7, 6, 5.8, 5.5, 5.2, 5 V
40
4.0 V
30
20
3.5 V
10
50
40
30
TJ = 100°C
20
TJ = 25°C
10
0.5
1
1.5
2
2.5
0
3
4
5
6
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
ID = 15 A
TJ = 25°C
0.019
0.017
0.015
0.013
4
3
VGS, GATE−TO−SOURCE VOLTAGE (V)
0.021
0.011
TJ = −55°C
2
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
5
6
7
9
8
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
0.05
TJ = 25°C
0.04
0.03
2.0
1.9 I = 30 A
D
1.8 V = 10 V
GS
1.7
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
0.8
0.7
−50 −25
0
VGS = 4.5 V
0.02
VGS = 10 V
0.01
0
10
20
30
40
60
50
70
ID, DRAIN CURRENT (A)
Figure 3. On−Resistance vs. Drain Current
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
10,000
VGS = 0 V
IDSS, LEAKAGE (nA)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (NORMALIZED)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (W)
0
VDS ≥ 10 V
60
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
70
TJ = 25°C
10 V
25
50
75
100
125
150
TJ = 150°C
1000
10
175
TJ = 100°C
100
2
12
22
32
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
42
NTD5806N
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
1500
VGS, GATE−TO−SOURCE VOLTAGE (V)
15
VGS = 0 V
TJ = 25°C
30
QT
10
Ciss
1000
500
Coss
0
10
5
Vgs
Crss
0
5
10
Vds
15
20
25
30
35
40
0
Qgs
10
ID = 30 A
TJ = 25°C
5
0
10
15
0
20
Qg, TOTAL GATE CHARGE (nC)
Figure 8. Gate−to−Source and
Drain−to−Source Voltage vs. Total Charge
Figure 7. Capacitance Variation
1000
IS, SOURCE CURRENT (A)
15
VDD = 32 V
ID = 30 A
VGS = 10 V
t, TIME (ns)
VGS
Qgd
GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (V)
tf
td(off)
tr
100
td(on)
10
1
20
VDS
5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
2000
1
10
VGS = 0 V
TJ = 25°C
10
5
0
100
0.4
0.5
0.6
0.7
0.9
0.8
1.0
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
50% Duty Cycle
R(t) °C/W
10
1
20%
10%
5%
2%
1%
0.1
Single Pulse
0.01
0.000001 0.00001
0.0001
0.001
0.01
0.1
PULSE TIME (sec)
1
Figure 11. Transient Thermal Resistance − DPAK Version
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4
10
100
1000
NTD5806N
ORDERING INFORMATION
Order Number
NTD5806NG
NTD5806NT4G
Package
Shipping†
IPAK (Straight Lead DPAK)
(Pb−Free)
75 Units / Rail
DPAK
(Pb−Free)
2500 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTD5806N
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE O
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING
PER ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
SEATING
PLANE
−T−
E
R
4
Z
A
S
1
2
DIM
A
B
C
D
E
F
G
H
J
K
L
R
S
U
V
Z
3
U
K
F
J
L
H
D
G
2 PL
0.13 (0.005)
M
T
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
SOLDERING FOOTPRINT*
6.20
0.244
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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6
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.180 BSC
0.034 0.040
0.018 0.023
0.102 0.114
0.090 BSC
0.180 0.215
0.025 0.040
0.020
−−−
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.22
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
4.58 BSC
0.87
1.01
0.46
0.58
2.60
2.89
2.29 BSC
4.57
5.45
0.63
1.01
0.51
−−−
0.89
1.27
3.93
−−−
NTD5806N
PACKAGE DIMENSIONS
IPAK (STRAIGHT LEAD DPAK)
CASE 369D−01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
3 PL
0.13 (0.005)
M
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
STYLE 2:
PIN 1. GATE
2. DRAIN
3. SOURCE
4. DRAIN
T
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For additional information, please contact your local
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NTD5806N/D