C2M0080120D VDS 1200 V ID @ 25˚C 36 A Silicon Carbide Power MOSFET TM C2M MOSFET Technology RDS(on) 80 mΩ N-Channel Enhancement Mode Features • • • • • • Package New C2M SiC MOSFET technlogy High Blocking Voltage with Low On-Resistance High Speed Switching with Low Capacitances Easy to Parallel and Simple to Drive Avalanche Ruggedness Halogen Free, RoHS Compliant TO-247-3 Benefits • • • • Higher System Efficiency Reduced Cooling Requirements Increased Power Density Increased System Switching Frequency Applications • • • • • Solar Inverters High Voltage DC/DC Converters Motor Drives Switch Mode Power Supplies Pulsed Power applications Part Number Package C2M0080120D TO-247-3 Maximum Ratings (TC = 25 ˚C unless otherwise specified) Symbol Value Unit Test Conditions VDSmax Drain - Source Voltage 1200 V VGS = 0 V, ID = 100 μA VGSmax Gate - Source Voltage -10/+25 V Absolute maximum values VGSop Gate - Source Voltage -5/+20 V Recommended operational values ID Continuous Drain Current ID(pulse) PD Pulsed Drain Current Power Dissipation TJ , Tstg 1 Parameter Operating Junction and Storage Temperature 36 24 VGS = 20 V, TC = 25˚C Fig. 19 VGS = 20 V, TC = 100˚C 80 A Pulse width tP limited by Tjmax Fig. 22 192 W TC=25˚C, TJ = 150 ˚C Fig. 20 -55 to +150 ˚C ˚C TL Solder Temperature 260 Md Mounting Torque 1 8.8 C2M0080120D Rev. B A Note 1.6mm (0.063”) from case for 10s Nm M3 or 6-32 screw lbf-in Electrical Characteristics (TC = 25˚C unless otherwise specified) Symbol Parameter V(BR)DSS Drain-Source Breakdown Voltage VGS(th) Gate Threshold Voltage IDSS Zero Gate Voltage Drain Current IGSS Gate-Source Leakage Current RDS(on) Min. Typ. Max. Unit 1200 VGS = 0 V, ID = 100 μA 2.4 3.0 V VDS = 10V, ID = 5 mA 1.8 2.3 V VDS = 10V, ID = 5 mA, TJ = 150ºC 100 μA VDS = 1200 V, VGS = 0 V 250 nA VGS = 20 V, VDS = 0 V 1 80 Drain-Source On-State Resistance 98 128 8.1 mΩ gfs Transconductance Ciss Input Capacitance Coss Output Capacitance 80 Crss Reverse Transfer Capacitance 7.6 Eoss Coss Stored Energy 45 μJ EAS Avalanche Energy, Single Pluse 1 J EON Turn-On Switching Energy 265 EOFF Turn Off Switching Energy 135 td(on) Turn-On Delay Time 11 Rise Time 20 Turn-Off Delay Time 23 Fall Time 19 Internal Gate Resistance 4.6 tr td(off) tf RG(int) Test Conditions V S 7.8 950 Qgs Gate to Source Charge 15 Qgd Gate to Drain Charge 23 Qg Total Gate Charge 62 VGS = 20 V, ID = 20 A VGS = 20 V, ID = 20A, TJ = 150ºC VDS= 20 V, IDS= 20 A VDS= 20 V, IDS= 20 A, TJ = 150ºC VGS = 0 V pF VDS = 1000 V Note Fig. 11 Fig. 4, 5, 6 Fig. 7 Fig. 17, 18 f = 1 MHz VAC = 25 mV Fig. 16 ID = 20A, VDD = 50V Fig. 29 μJ VDS = 800 V, VGS = -5/20 V, ID = 20A, RG(ext) = 2.5Ω, L= 142 μH Fig. 25 ns VDD = 800 V, VGS = -5/20 V ID = 20 A, RG(ext) = 2.5 Ω, RL = 40 Ω, Timing relative to VDS Per IEC60747-8-4 pg 83 Fig. 27 Ω f = 1 MHz, VAC = 25 mV nC VDS = 800 V, VGS = -5/20 V ID = 20 A Per IEC60747-8-4 pg 21 Fig. 12 Test Conditions Note Reverse Diode Characteristics Symbol VSD Parameter Diode Forward Voltage IS Continuous Diode Forward Current trr Reverse Recover time Qrr Reverse Recovery Charge Irrm Peak Reverse Recovery Current Typ. Max. Unit 3.3 V VGS = - 5 V, ISD = 10 A 3.1 V VGS = - 5 V, ISD = 10 A, TJ = 150 °C A TC = 25˚C Note 1 VGS = - 5 V, ISD = 20 A, VR = 800 V dif/dt = 2400 A/µs Note 1 36 32 ns 192 nC 10 A Fig. 8, 9, 10 Note (1): When using SiC Body Diode the maximum recommended VGS = -5V Thermal Characteristics Symbol 2 Parameter Typ. Max. RθJC Thermal Resistance from Junction to Case 0.60 0.65 RθJA Thermal Resistance From Junction to Ambient C2M0080120D Rev. B 40 Unit °C/W Test Conditions Note Fig. 21 Typical Performance Conditions: TJ = -55 °C tp < 200 µs Drain-Source Current, IDS (A) 60 70 VGS = 20 V Conditions: TJ = 25 °C tp < 200 µs 60 VGS = 18 V Drain-Source Current, IDS (A) 70 50 VGS = 16 V 40 VGS = 14 V 30 20 VGS = 12 V 10 VGS = 20 V VGS = 18 V 50 VGS = 16 V 30 VGS = 12 V 20 VGS = 10 V 10 VGS = 10 V 0 0 0.0 2.5 5.0 7.5 10.0 12.5 0.0 2.5 5.0 Drain-Source Voltage, VDS (V) 70 60 10.0 12.5 Figure 2. Output Characteristics TJ = 25 ºC 2.0 Conditions: TJ = 150 °C tp < 200 µs 7.5 Drain-Source Voltage, VDS (V) Figure 1. Output Characteristics TJ = -55 ºC Conditions: IDS = 20 A VGS = 20 V tp < 200 µs 1.8 VGS = 20 V 1.6 VGS = 18 V On Resistance, RDS On (P.U.) Drain-Source Current, IDS (A) VGS = 14 V 40 50 VGS = 16 V VGS = 14 V 40 VGS = 12 V 30 20 VGS = 10 V 10 1.4 1.2 1.0 0.8 0.6 0.4 0.2 0.0 0 0.0 2.5 5.0 7.5 10.0 -50 12.5 -25 0 Figure 3. Output Characteristics TJ = 150 ºC Conditions: VGS = 20 V tp < 200 µs 180 50 75 100 125 150 Figure 4. Normalized On-Resistance vs. Temperature 280 200 25 Junction Temperature, TJ (°C) Drain-Source Voltage, VDS (V) Conditions: IDS = 20 A tp < 200 µs 240 140 On Resistance, RDS On (mOhms) On Resistance, RDS On (mOhms) 160 TJ = 150 °C 120 100 TJ = 25 °C 80 TJ = -55 °C 60 40 20 160 VGS = 14 V 120 VGS = 16 V VGS = 18 V 80 VGS = 20 V 40 0 0 0 10 20 30 40 50 60 Drain-Source Current, IDS (A) Figure 5. On-Resistance vs. Drain Current For Various Temperatures 3 200 C2M0080120D Rev. B 70 -50 -25 0 25 50 75 100 125 Junction Temperature, TJ (°C) Figure 6. On-Resistance vs. Temperature For Various Gate Voltage 150 Typical Performance -6 -7 Conditions: VDS = 20 V tp < 200 µs -5 -3 -4 -2 -1 TJ = 150 °C 30 0 0 Condition: TJ = -55 °C tp < 200 µs VGS = -5 V -10 VGS = 0 V Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) 40 TJ = 25 °C 20 TJ = -55 °C 10 -20 VGS = -2 V -30 -40 -50 -60 0 0 2 4 6 8 10 12 14 -70 Gate-Source Voltage, VGS (V) Drain-Source Voltage, VDS (A) Figure 7. Transfer Characteristic for Various Junction Temperatures -7 -6 -5 -4 -3 -2 Figure 8. Body Diode Characteristic at -55 ºC -1 0 Condition: TJ = 25 °C tp < 200 µs VGS = -5 V -7 -6 -5 -4 -3 -2 -1 0 VGS = -5 V -10 0 Condition: TJ = 150 °C tp < 200 µs VGS = 0 V 0 -10 -20 VGS = -2 V -30 -40 -50 Drain-Source Current, IDS (A) Drain-Source Current, IDS (A) VGS = 0 V -20 VGS = -2 V -30 -40 -50 -60 -60 -70 -70 Drain-Source Voltage, VDS (A) Drain-Source Voltage, VDS (A) Figure 9. Body Diode Characteristic at 25 ºC Figure 10. Body Diode Characteristic at 150 ºC 4.5 25 Conditons VDS = 10 V IDS = 5 mA 4.0 20 Gate-Source Voltage, VGS (V) Threshold Voltage, Vth (V) 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 Junction Temperature TJ (°C) Figure 11. Threshold Voltage vs. Temperature 4 C2M0080120D Rev. B Conditions: IDS = 20 A IGS = 100 mA VDS = 800 V TJ = 25 °C 150 15 10 5 0 -5 0 10 20 30 40 50 Gate Charge, QG (nC) Figure 12. Gate Charge Characteristics 60 70 Typical Performance -6 -5 -4 -3 -2 -1 0 -6 -5 -4 -3 -2 -1 0 0 Conditions: TJ = -55 °C tp < 200 µs 0 Conditions: TJ = 25 °C tp < 200 µs VGS = 0 V Drain-Source Current, IDS (A) -20 -30 VGS = 10 V VGS = 15 V -40 VGS = 20 V -50 -10 VGS = 5 V Drain-Source Current, IDS (A) -10 VGS = 5 V VGS = 0 V VGS = 10 V -30 VGS = 15 V -40 VGS = 20 V -50 -60 -60 -70 Drain-Source Voltage, VDS (V) -5 -4 -3 -2 -1 Figure 14. 3rd Quadrant Characteristic at 25 ºC 0 50 0 Drain-Source Current, IDS (A) VGS = 0 V VGS = 5 V 45 -10 -20 VGS = 10 V -30 VGS = 15 V VGS = 20 V -40 -50 40 Stored Energy, EOSS (µJ) Conditions: TJ = 150 °C tp < 200 µs -70 Drain-Source Voltage, VDS (V) Figure 13. 3rd Quadrant Characteristic at -55 ºC -6 -20 35 30 25 20 15 10 5 -60 0 0 -70 Drain-Source Voltage, VDS (V) 800 1000 10000 1200 Coss 100 Crss 10 Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss 1000 Capacitance (pF) Capacitance (pF) 600 Figure 16. Output Capacitor Stored Energy Conditions: TJ = 25 °C VAC = 25 mV f = 1 MHz Ciss 1000 400 Drain to Source Voltage, VDS (V) Figure 15. 3rd Quadrant Characteristic at 150 ºC 10000 200 Coss 100 10 Crss 1 1 0 50 100 Drain-Source Voltage, VDS (V) 150 Figure 17. Capacitances vs. Drain-Source Voltage (0 - 200V) 5 C2M0080120D Rev. B 200 0 200 400 600 Drain-Source Voltage, VDS (V) 800 Figure 18. Capacitances vs. Drain-Source Voltage (0 - 1000V) 1000 Typical Performance 250 Conditions: TJ ≤ 150 °C 35 Conditions: TJ ≤ 150 °C Maximum Dissipated Power, Ptot (W) Drain-Source Continous Current, IDS (DC) (A) 40 30 25 20 15 10 5 200 150 100 50 0 -55 -30 -5 20 45 70 95 120 0 145 -55 Case Temperature, TC (°C) 45 70 95 120 145 100.00 0.5 Drain-Source Current, IDS (A) 100E-3 0.1 0.05 0.02 SinglePulse 10E-3 0.01 10E-6 100E-6 1E-3 10E-3 Time, tp (s) 100E-3 1 ms 100 ms 1.00 0.10 Conditions: TC = 25 °C D = 0, Parameter: tp 0.1 1 1200 1000 ETotal 800 600 EOn 400 200 100 Conditions: TJ = 25 °C VDD = 600 V RG(ext) = 2.5 Ω VGS = -5/+20 V FWD = C4D10120A L = 142 μH 1000 Switching Energy (uJ) 1400 10 1000 Figure 22. Safe Operating Area 1200 Conditions: TJ = 25 °C VDD = 800 V RG(ext) = 2.5 Ω VGS = -5/+20 V FWD = C4D10120A L = 142 μH 1 Drain-Source Voltage, VDS (V) Figure 21. Transient Thermal Impedance (Junction - Case) 1600 100 µs 10.00 0.01 1E-3 1E-6 10 µs Limited by RDS On 0.3 Switching Energy (uJ) 20 Figure 20. Maximum Power Dissipation Derating vs. Case Temperature 1 800 ETotal 600 EOn 400 200 EOff 0 EOff 0 0 10 20 30 40 Drain to Source Current, IDS (A) Figure 23. Clamped Inductive Switching Energy vs. Drain Current (VDD = 800V) 6 -5 Case Temperature, TC (°C) Figure 19. Continuous Drain Current Derating vs. Case Temperature Junction To Case Impedance, ZthJC (oC/W) -30 C2M0080120D Rev. B 50 0 10 20 30 40 Drain to Source Current, IDS (A) Figure 24. Clamped Inductive Switching Energy vs. Drain Current (VDD = 600V) 50 Typical Performance 900 800 700 Switching Loss (uJ) 600 Conditions: TJ = 25 °C VDD = 800 V IDS = 20 A VGS = -5/+20 V FWD = C4D10120A L = 142 μH 600 500 EOn 400 EOff 300 Conditions: IDS = 20 A VDD = 800 V RG(ext) = 2.5 Ω VGS = -5/+20 V FWD = C4D10120A L = 142 µH 500 ETotal Swithcing Loss (uJ) 1000 ETotal 400 300 EOn 200 EOff 200 100 100 0 0 0 5 10 15 20 25 30 External Gate Resistor RG(ext) (Ohms) Conditions: TJ = 25 °C VDD = 800 V RL = 40 Ω VGS = -5/+20 V 60 50 -25 0 25 50 75 100 Figure 26. Clamped Inductive Switching Energy vs. Temperature tr Time (ns) tf 40 td (off) 30 td (on) 20 10 0 0 5 10 15 20 25 30 External Gate Resistor, RG(ext) (Ohms) Figure 28. Switching Times Definition Figure 27. Switching Times vs. RG(ext) 35 Conditons: VDD = 50 V Avalanche Current (A) 30 25 20 15 10 5 0 0 25 50 75 100 125 150 Time in Avalanche TAV (us) Figure 29. Single Avalanche SOA curve 7 C2M0080120D Rev. B 125 Junction Temperature, TJ (°C) Figure 25. Clamped Inductive Switching Energy vs. RG(ext) 70 -50 175 200 150 Test Circuit Schematic D1 L=142 uH VDC C4D10120A 10A, 1200V SiC Schottky CDC=42.3 uF Q2 RG D.U.T C2M0080120D Figure 30. Clamped Inductive Switching Waveform Test Circuit Q1 RG L=142 uH VDC CDC=42.3 uF D.U.T C2M0080120D VGS= - 5V RG Q2 C2M0080120D Figure 31. Body Diode Recovery Test Circuit ESD Ratings 8 ESD Test Total Devices Sampled Resulting Classification ESD-HBM All Devices Passed 1000V 2 (>2000V) ESD-MM All Devices Passed 400V C (>400V) ESD-CDM All Devices Passed 1000V IV (>1000V) C2M0080120D Rev. B Package Dimensions POS Package TO-247-3 T V U W Pinout Information: • • • Pin 1 = Gate Pin 2, 4 = Drain Pin 3 = Source Inches Millimeters Min Max Min A .190 .205 4.83 5.21 A1 .090 .100 2.29 2.54 A2 .075 .085 1.91 2.16 b .042 .052 1.07 1.33 b1 .075 .095 1.91 2.41 b2 .075 .085 1.91 2.16 b3 .113 .133 2.87 3.38 b4 .113 .123 2.87 3.13 c .022 .027 0.55 0.68 D .819 .831 20.80 21.10 D1 .640 .695 16.25 17.65 D2 .037 .049 0.95 1.25 E .620 .635 15.75 16.13 E1 .516 .557 13.10 14.15 5.10 E2 .145 .201 3.68 E3 .039 .075 1.00 1.90 E4 .487 .529 12.38 13.43 e .214 BSC N 3 5.44 BSC 3 L .780 .800 19.81 20.32 L1 .161 .173 4.10 4.40 ØP .138 .144 3.51 3.65 Q .216 .236 5.49 6.00 S .238 .248 6.04 6.30 T 9˚ 11˚ 9˚ 11˚ U 9˚ 11˚ 9˚ 11˚ V 2˚ 8˚ 2˚ 8˚ W 2˚ 8˚ 2˚ 8˚ Recommended Solder Pad Layout TO-247-3 9 C2M0080120D Rev. B Max Part Number Package Marking C2M0080120D TO-247-3 C2M0080120 Notes • RoHS Compliance The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can be obtained from your Cree representative or from the Product Documentation sections of www.cree.com. • REACh Compliance REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration. REACh banned substance information (REACh Article 67) is also available upon request. • This product has not been designed or tested for use in, and is not intended for use in, applications implanted into the human body nor in applications in which failure of the product could lead to death, personal injury or property damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines, cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control systems, air traffic control systems. Related Links • • • C2M PSPICE Models: www.cree.com/power SiC MOSFET Isolated Gate Driver reference design: www.cree.com/power Application Considerations for Silicon-Carbide MOSFETs: www.cree.com/power Copyright © 2014 Cree, Inc. All rights reserved. The information in this document is subject to change without notice. Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc. 10 C2M0080120D Rev B Cree, Inc. 4600 Silicon Drive Durham, NC 27703 USA Tel: +1.919.313.5300 Fax: +1.919.313.5451 www.cree.com/power