Data Sheet - Cree, Inc

C2M0080120D
VDS
1200 V
ID @ 25˚C 36 A
Silicon Carbide Power MOSFET
TM
C2M MOSFET Technology
RDS(on)
80 mΩ
N-Channel Enhancement Mode
Features
•
•
•
•
•
•
Package
New C2M SiC MOSFET technlogy
High Blocking Voltage with Low On-Resistance
High Speed Switching with Low Capacitances
Easy to Parallel and Simple to Drive
Avalanche Ruggedness
Halogen Free, RoHS Compliant
TO-247-3
Benefits
•
•
•
•
Higher System Efficiency
Reduced Cooling Requirements
Increased Power Density
Increased System Switching Frequency
Applications
•
•
•
•
•
Solar Inverters
High Voltage DC/DC Converters
Motor Drives
Switch Mode Power Supplies
Pulsed Power applications
Part Number
Package
C2M0080120D
TO-247-3
Maximum Ratings (TC = 25 ˚C unless otherwise specified)
Symbol
Value
Unit
Test Conditions
VDSmax
Drain - Source Voltage
1200
V
VGS = 0 V, ID = 100 μA
VGSmax
Gate - Source Voltage
-10/+25
V
Absolute maximum values
VGSop
Gate - Source Voltage
-5/+20
V
Recommended operational values
ID
Continuous Drain Current
ID(pulse)
PD
Pulsed Drain Current
Power Dissipation
TJ , Tstg
1
Parameter
Operating Junction and Storage Temperature
36
24
VGS = 20 V, TC = 25˚C
Fig. 19
VGS = 20 V, TC = 100˚C
80
A
Pulse width tP limited by Tjmax
Fig. 22
192
W
TC=25˚C, TJ = 150 ˚C
Fig. 20
-55 to
+150
˚C
˚C
TL
Solder Temperature
260
Md
Mounting Torque
1
8.8
C2M0080120D Rev. B
A
Note
1.6mm (0.063”) from case for 10s
Nm
M3 or 6-32 screw
lbf-in
Electrical Characteristics (TC = 25˚C unless otherwise specified)
Symbol
Parameter
V(BR)DSS
Drain-Source Breakdown Voltage
VGS(th)
Gate Threshold Voltage
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Source Leakage Current
RDS(on)
Min.
Typ.
Max. Unit
1200
VGS = 0 V, ID = 100 μA
2.4
3.0
V
VDS = 10V, ID = 5 mA
1.8
2.3
V
VDS = 10V, ID = 5 mA, TJ = 150ºC
100
μA
VDS = 1200 V, VGS = 0 V
250
nA
VGS = 20 V, VDS = 0 V
1
80
Drain-Source On-State Resistance
98
128
8.1
mΩ
gfs
Transconductance
Ciss
Input Capacitance
Coss
Output Capacitance
80
Crss
Reverse Transfer Capacitance
7.6
Eoss
Coss Stored Energy
45
μJ
EAS
Avalanche Energy, Single Pluse
1
J
EON
Turn-On Switching Energy
265
EOFF
Turn Off Switching Energy
135
td(on)
Turn-On Delay Time
11
Rise Time
20
Turn-Off Delay Time
23
Fall Time
19
Internal Gate Resistance
4.6
tr
td(off)
tf
RG(int)
Test Conditions
V
S
7.8
950
Qgs
Gate to Source Charge
15
Qgd
Gate to Drain Charge
23
Qg
Total Gate Charge
62
VGS = 20 V, ID = 20 A
VGS = 20 V, ID = 20A, TJ = 150ºC
VDS= 20 V, IDS= 20 A
VDS= 20 V, IDS= 20 A, TJ = 150ºC
VGS = 0 V
pF
VDS = 1000 V
Note
Fig. 11
Fig.
4, 5, 6
Fig. 7
Fig.
17, 18
f = 1 MHz
VAC = 25 mV
Fig. 16
ID = 20A, VDD = 50V
Fig. 29
μJ
VDS = 800 V, VGS = -5/20 V, ID =
20A, RG(ext) = 2.5Ω, L= 142 μH
Fig. 25
ns
VDD = 800 V, VGS = -5/20 V
ID = 20 A, RG(ext) = 2.5 Ω,
RL = 40 Ω, Timing relative to VDS
Per IEC60747-8-4 pg 83
Fig. 27
Ω
f = 1 MHz, VAC = 25 mV
nC
VDS = 800 V, VGS = -5/20 V
ID = 20 A
Per IEC60747-8-4 pg 21
Fig. 12
Test Conditions
Note
Reverse Diode Characteristics
Symbol
VSD
Parameter
Diode Forward Voltage
IS
Continuous Diode Forward Current
trr
Reverse Recover time
Qrr
Reverse Recovery Charge
Irrm
Peak Reverse Recovery Current
Typ.
Max.
Unit
3.3
V
VGS = - 5 V, ISD = 10 A
3.1
V
VGS = - 5 V, ISD = 10 A, TJ = 150 °C
A
TC = 25˚C
Note 1
VGS = - 5 V, ISD = 20 A, VR = 800 V
dif/dt = 2400 A/µs
Note 1
36
32
ns
192
nC
10
A
Fig. 8,
9, 10
Note (1): When using SiC Body Diode the maximum recommended VGS = -5V
Thermal Characteristics
Symbol
2
Parameter
Typ.
Max.
RθJC
Thermal Resistance from Junction to Case
0.60
0.65
RθJA
Thermal Resistance From Junction to Ambient
C2M0080120D Rev. B
40
Unit
°C/W
Test Conditions
Note
Fig. 21
Typical Performance
Conditions:
TJ = -55 °C
tp < 200 µs
Drain-Source Current, IDS (A)
60
70
VGS = 20 V
Conditions:
TJ = 25 °C
tp < 200 µs
60
VGS = 18 V
Drain-Source Current, IDS (A)
70
50
VGS = 16 V
40
VGS = 14 V
30
20
VGS = 12 V
10
VGS = 20 V
VGS = 18 V
50
VGS = 16 V
30
VGS = 12 V
20
VGS = 10 V
10
VGS = 10 V
0
0
0.0
2.5
5.0
7.5
10.0
12.5
0.0
2.5
5.0
Drain-Source Voltage, VDS (V)
70
60
10.0
12.5
Figure 2. Output Characteristics TJ = 25 ºC
2.0
Conditions:
TJ = 150 °C
tp < 200 µs
7.5
Drain-Source Voltage, VDS (V)
Figure 1. Output Characteristics TJ = -55 ºC
Conditions:
IDS = 20 A
VGS = 20 V
tp < 200 µs
1.8
VGS = 20 V
1.6
VGS = 18 V
On Resistance, RDS On (P.U.)
Drain-Source Current, IDS (A)
VGS = 14 V
40
50
VGS = 16 V
VGS = 14 V
40
VGS = 12 V
30
20
VGS = 10 V
10
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
0.0
2.5
5.0
7.5
10.0
-50
12.5
-25
0
Figure 3. Output Characteristics TJ = 150 ºC
Conditions:
VGS = 20 V
tp < 200 µs
180
50
75
100
125
150
Figure 4. Normalized On-Resistance vs. Temperature
280
200
25
Junction Temperature, TJ (°C)
Drain-Source Voltage, VDS (V)
Conditions:
IDS = 20 A
tp < 200 µs
240
140
On Resistance, RDS On (mOhms)
On Resistance, RDS On (mOhms)
160
TJ = 150 °C
120
100
TJ = 25 °C
80
TJ = -55 °C
60
40
20
160
VGS = 14 V
120
VGS = 16 V
VGS = 18 V
80
VGS = 20 V
40
0
0
0
10
20
30
40
50
60
Drain-Source Current, IDS (A)
Figure 5. On-Resistance vs. Drain Current
For Various Temperatures
3
200
C2M0080120D Rev. B
70
-50
-25
0
25
50
75
100
125
Junction Temperature, TJ (°C)
Figure 6. On-Resistance vs. Temperature
For Various Gate Voltage
150
Typical Performance
-6
-7
Conditions:
VDS = 20 V
tp < 200 µs
-5
-3
-4
-2
-1
TJ = 150 °C
30
0
0
Condition:
TJ = -55 °C
tp < 200 µs
VGS = -5 V
-10
VGS = 0 V
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
40
TJ = 25 °C
20
TJ = -55 °C
10
-20
VGS = -2 V
-30
-40
-50
-60
0
0
2
4
6
8
10
12
14
-70
Gate-Source Voltage, VGS (V)
Drain-Source Voltage, VDS (A)
Figure 7. Transfer Characteristic for
Various Junction Temperatures
-7
-6
-5
-4
-3
-2
Figure 8. Body Diode Characteristic at -55 ºC
-1
0
Condition:
TJ = 25 °C
tp < 200 µs
VGS = -5 V
-7
-6
-5
-4
-3
-2
-1
0
VGS = -5 V
-10
0
Condition:
TJ = 150 °C
tp < 200 µs
VGS = 0 V
0
-10
-20
VGS = -2 V
-30
-40
-50
Drain-Source Current, IDS (A)
Drain-Source Current, IDS (A)
VGS = 0 V
-20
VGS = -2 V
-30
-40
-50
-60
-60
-70
-70
Drain-Source Voltage, VDS (A)
Drain-Source Voltage, VDS (A)
Figure 9. Body Diode Characteristic at 25 ºC
Figure 10. Body Diode Characteristic at 150 ºC
4.5
25
Conditons
VDS = 10 V
IDS = 5 mA
4.0
20
Gate-Source Voltage, VGS (V)
Threshold Voltage, Vth (V)
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-50
-25
0
25
50
75
100
125
Junction Temperature TJ (°C)
Figure 11. Threshold Voltage vs. Temperature
4
C2M0080120D Rev. B
Conditions:
IDS = 20 A
IGS = 100 mA
VDS = 800 V
TJ = 25 °C
150
15
10
5
0
-5
0
10
20
30
40
50
Gate Charge, QG (nC)
Figure 12. Gate Charge Characteristics
60
70
Typical Performance
-6
-5
-4
-3
-2
-1
0
-6
-5
-4
-3
-2
-1
0
0
Conditions:
TJ = -55 °C
tp < 200 µs
0
Conditions:
TJ = 25 °C
tp < 200 µs
VGS = 0 V
Drain-Source Current, IDS (A)
-20
-30
VGS = 10 V
VGS = 15 V
-40
VGS = 20 V
-50
-10
VGS = 5 V
Drain-Source Current, IDS (A)
-10
VGS = 5 V
VGS = 0 V
VGS = 10 V
-30
VGS = 15 V
-40
VGS = 20 V
-50
-60
-60
-70
Drain-Source Voltage, VDS (V)
-5
-4
-3
-2
-1
Figure 14. 3rd Quadrant Characteristic at 25 ºC
0
50
0
Drain-Source Current, IDS (A)
VGS = 0 V
VGS = 5 V
45
-10
-20
VGS = 10 V
-30
VGS = 15 V
VGS = 20 V
-40
-50
40
Stored Energy, EOSS (µJ)
Conditions:
TJ = 150 °C
tp < 200 µs
-70
Drain-Source Voltage, VDS (V)
Figure 13. 3rd Quadrant Characteristic at -55 ºC
-6
-20
35
30
25
20
15
10
5
-60
0
0
-70
Drain-Source Voltage, VDS (V)
800
1000
10000
1200
Coss
100
Crss
10
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Ciss
1000
Capacitance (pF)
Capacitance (pF)
600
Figure 16. Output Capacitor Stored Energy
Conditions:
TJ = 25 °C
VAC = 25 mV
f = 1 MHz
Ciss
1000
400
Drain to Source Voltage, VDS (V)
Figure 15. 3rd Quadrant Characteristic at 150 ºC
10000
200
Coss
100
10
Crss
1
1
0
50
100
Drain-Source Voltage, VDS (V)
150
Figure 17. Capacitances vs. Drain-Source
Voltage (0 - 200V)
5
C2M0080120D Rev. B
200
0
200
400
600
Drain-Source Voltage, VDS (V)
800
Figure 18. Capacitances vs. Drain-Source
Voltage (0 - 1000V)
1000
Typical Performance
250
Conditions:
TJ ≤ 150 °C
35
Conditions:
TJ ≤ 150 °C
Maximum Dissipated Power, Ptot (W)
Drain-Source Continous Current, IDS (DC) (A)
40
30
25
20
15
10
5
200
150
100
50
0
-55
-30
-5
20
45
70
95
120
0
145
-55
Case Temperature, TC (°C)
45
70
95
120
145
100.00
0.5
Drain-Source Current, IDS (A)
100E-3
0.1
0.05
0.02
SinglePulse
10E-3
0.01
10E-6
100E-6
1E-3
10E-3
Time, tp (s)
100E-3
1 ms
100 ms
1.00
0.10
Conditions:
TC = 25 °C
D = 0,
Parameter: tp
0.1
1
1200
1000
ETotal
800
600
EOn
400
200
100
Conditions:
TJ = 25 °C
VDD = 600 V
RG(ext) = 2.5 Ω
VGS = -5/+20 V
FWD = C4D10120A
L = 142 μH
1000
Switching Energy (uJ)
1400
10
1000
Figure 22. Safe Operating Area
1200
Conditions:
TJ = 25 °C
VDD = 800 V
RG(ext) = 2.5 Ω
VGS = -5/+20 V
FWD = C4D10120A
L = 142 μH
1
Drain-Source Voltage, VDS (V)
Figure 21. Transient Thermal Impedance
(Junction - Case)
1600
100 µs
10.00
0.01
1E-3
1E-6
10 µs
Limited by RDS On
0.3
Switching Energy (uJ)
20
Figure 20. Maximum Power Dissipation Derating vs.
Case Temperature
1
800
ETotal
600
EOn
400
200
EOff
0
EOff
0
0
10
20
30
40
Drain to Source Current, IDS (A)
Figure 23. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 800V)
6
-5
Case Temperature, TC (°C)
Figure 19. Continuous Drain Current Derating vs.
Case Temperature
Junction To Case Impedance, ZthJC (oC/W)
-30
C2M0080120D Rev. B
50
0
10
20
30
40
Drain to Source Current, IDS (A)
Figure 24. Clamped Inductive Switching Energy vs.
Drain Current (VDD = 600V)
50
Typical Performance
900
800
700
Switching Loss (uJ)
600
Conditions:
TJ = 25 °C
VDD = 800 V
IDS = 20 A
VGS = -5/+20 V
FWD = C4D10120A
L = 142 μH
600
500
EOn
400
EOff
300
Conditions:
IDS = 20 A
VDD = 800 V
RG(ext) = 2.5 Ω
VGS = -5/+20 V
FWD = C4D10120A
L = 142 µH
500
ETotal
Swithcing Loss (uJ)
1000
ETotal
400
300
EOn
200
EOff
200
100
100
0
0
0
5
10
15
20
25
30
External Gate Resistor RG(ext) (Ohms)
Conditions:
TJ = 25 °C
VDD = 800 V
RL = 40 Ω
VGS = -5/+20 V
60
50
-25
0
25
50
75
100
Figure 26. Clamped Inductive Switching Energy vs.
Temperature
tr
Time (ns)
tf
40
td (off)
30
td (on)
20
10
0
0
5
10
15
20
25
30
External Gate Resistor, RG(ext) (Ohms)
Figure 28. Switching Times Definition
Figure 27. Switching Times vs. RG(ext)
35
Conditons:
VDD = 50 V
Avalanche Current (A)
30
25
20
15
10
5
0
0
25
50
75
100
125
150
Time in Avalanche TAV (us)
Figure 29. Single Avalanche SOA curve
7
C2M0080120D Rev. B
125
Junction Temperature, TJ (°C)
Figure 25. Clamped Inductive Switching Energy vs. RG(ext)
70
-50
175
200
150
Test Circuit Schematic
D1
L=142 uH
VDC
C4D10120A
10A, 1200V
SiC Schottky
CDC=42.3 uF
Q2
RG
D.U.T
C2M0080120D
Figure 30. Clamped Inductive Switching
Waveform Test Circuit
Q1
RG
L=142 uH
VDC
CDC=42.3 uF
D.U.T
C2M0080120D
VGS= - 5V
RG
Q2
C2M0080120D
Figure 31. Body Diode Recovery Test Circuit
ESD Ratings
8
ESD Test
Total Devices Sampled
Resulting Classification
ESD-HBM
All Devices Passed 1000V
2 (>2000V)
ESD-MM
All Devices Passed 400V
C (>400V)
ESD-CDM
All Devices Passed 1000V
IV (>1000V)
C2M0080120D Rev. B
Package Dimensions
POS
Package TO-247-3
T
V
U
W
Pinout Information:
•
•
•
Pin 1 = Gate
Pin 2, 4 = Drain
Pin 3 = Source
Inches
Millimeters
Min
Max
Min
A
.190
.205
4.83
5.21
A1
.090
.100
2.29
2.54
A2
.075
.085
1.91
2.16
b
.042
.052
1.07
1.33
b1
.075
.095
1.91
2.41
b2
.075
.085
1.91
2.16
b3
.113
.133
2.87
3.38
b4
.113
.123
2.87
3.13
c
.022
.027
0.55
0.68
D
.819
.831
20.80
21.10
D1
.640
.695
16.25
17.65
D2
.037
.049
0.95
1.25
E
.620
.635
15.75
16.13
E1
.516
.557
13.10
14.15
5.10
E2
.145
.201
3.68
E3
.039
.075
1.00
1.90
E4
.487
.529
12.38
13.43
e
.214 BSC
N
3
5.44 BSC
3
L
.780
.800
19.81
20.32
L1
.161
.173
4.10
4.40
ØP
.138
.144
3.51
3.65
Q
.216
.236
5.49
6.00
S
.238
.248
6.04
6.30
T
9˚
11˚
9˚
11˚
U
9˚
11˚
9˚
11˚
V
2˚
8˚
2˚
8˚
W
2˚
8˚
2˚
8˚
Recommended Solder Pad Layout
TO-247-3
9
C2M0080120D Rev. B
Max
Part Number
Package
Marking
C2M0080120D
TO-247-3
C2M0080120
Notes
• RoHS Compliance
The levels of RoHS restricted materials in this product are below the maximum concentration values (also referred
to as the threshold limits) permitted for such substances, or are used in an exempted application, in accordance
with EU Directive 2011/65/EC (RoHS2), as implemented January 2, 2013. RoHS Declarations for this product can
be obtained from your Cree representative or from the Product Documentation sections of www.cree.com.
• REACh Compliance
REACh substances of high concern (SVHCs) information is available for this product. Since the European Chemical Agency (ECHA) has published notice of their intent to frequently revise the SVHC listing for the foreseeable
future,please contact a Cree representative to insure you get the most up-to-date REACh SVHC Declaration.
REACh banned substance information (REACh Article 67) is also available upon request.
•
This product has not been designed or tested for use in, and is not intended for use in, applications implanted into
the human body nor in applications in which failure of the product could lead to death, personal injury or property
damage, including but not limited to equipment used in the operation of nuclear facilities, life-support machines,
cardiac defibrillators or similar emergency medical equipment, aircraft navigation or communication or control
systems, air traffic control systems.
Related Links
•
•
•
C2M PSPICE Models: www.cree.com/power
SiC MOSFET Isolated Gate Driver reference design: www.cree.com/power
Application Considerations for Silicon-Carbide MOSFETs: www.cree.com/power
Copyright © 2014 Cree, Inc. All rights reserved.
The information in this document is subject to change without notice.
Cree, the Cree logo, and Zero Recovery are registered trademarks of Cree, Inc.
10
C2M0080120D Rev B
Cree, Inc.
4600 Silicon Drive
Durham, NC 27703
USA Tel: +1.919.313.5300
Fax: +1.919.313.5451
www.cree.com/power