ISL9R30120 STEALTH™ Rectifier Diode Chip 1200V, 30A, VF 2.8V, trr 45ns Part VRRM IF(AV)n VF Typ trr Typ Die Size ISL9R18120 1200V 30A 2.8V 45ns 4.1 x 4.1 mm 2 See page 2 for ordering part numbers & supply formats Applications Features • General Purpose • Soft Stealth Recovery trr = 269ns @ IF = 30A • Free Wheeling Diode • Low loss optimised - Low IRM(REC) & Short ta phase • Avalanche Energy Rated Maximum Ratings Symbol Parameter Ratings Units VRRM Peak Repetitive Reverse Voltage 1200 V VRWM Working Peak Reverse Voltage 1200 V VR DC Blocking Voltage 1200 V 30 A 1 IF(AV) Average Rectified Forward Current @ TC = 80°C IFRM Repetitive Peak Surge Current (20kHz Square Wave) 70 A IFSM Non-repetitive Peak Surge Current 60Hz Single Half-Sine Wave 325 A 20 mJ -55 to 150 °C 3 EAVL Avalanche Energy (1A, 40mH) TJ, TSTG Operation Junction & Storage Temperature Off State Characteristics, TJ = 25° unless otherwise noted Symbol Parameter 2 IR Reverse Current VR = 1200V Min Typ Max Units TC = 25°C - - 100 µA TC = 125°C - - 1.0 mA Min Typ Max Units TC = 25°C - 2.8 3.3 V TC = 125°C - 2.6 3.1 V On State Characteristics, TJ = 25° unless otherwise noted Symbol VF Parameter 2 Forward Voltage IF = 30A 1. 2. 3. Performance will vary based on assembly technique and substrate choice. Pulse: Test Pulse width = 300µs, Duty Cycle = 2% Specified in discrete package, not subject to 100% test at wafer level Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page1 Notes: Dynamic Characteristics, TJ = 25° unless otherwise noted Symbol Parameter CJ Junction Capacitance 3 VR = 10V, IF = 0A Min Typ Max Units - 115 - pF Switching Characteristics, TJ = 25° unless otherwise noted Symbol trr Parameter 3 Reverse Recovery Time trr Irr Reverse Recovery Current Qrr Reverse Recovery charge 3 Test conditions Min Typ. Max units IF = 1A,dI/dt = 100A/µs, VR= 15V - 45 - ns IF = 30A,dI/dt = 100A/µs, VR= 15V - 80 - ns - 269 - ns - 7.5 - A - 930 - nC - 529 - ns - 6.2 - - - 11 - A - 3.0 - µC - 260 - ns - 4.8 - - - 30 - A - 3.4 - µC - 520 - A/µs IF = 30A, dIF/dt = 200A/µs, VR= 780V, TC = 25°C 3 trr Reverse Recovery Time 3 S Softness Factor (tb/ta) Irr Reverse Recovery Current Qrr Reverse Recovered Charge 3 IF = 30A, dIF/dt = 200A/µs, VR = 780V, TC = 125°C 3 trr Reverse Recovery Time S Softness Factor 3 Irr Reverse Recovery Current Qrr Reverse Recovery charge dIM/dt Maximum di/dt during tb 3 IF = 30A, dIF/dt = 1000A/µs, VR =780V, TC= 125°C Notes: 1 2 3 Performance will vary based on assembly technique and substrate choice. Pulse: Test Pulse width = 300µs, Duty Cycle = 2% Specified in discrete package, not subject to 100% test at wafer level Ordering Guide Part Number Format Detail / Drawing ISL9R30120MW ISL9R30120MF ISL9R30120MD Un-sawn wafer, electrical rejects inked Page 2 Sawn wafer on film-frame Page 3 Singulated die / chips in waffle pack Page 3 Page2 Note: Singulated Die / Chips can also be supplied in Pocket Tape or SurfTape® on request Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Die Drawing – Dimensions in µm 4064 40 3048 3048 Passivated area 4064 ANODE Chip backside is CATHODE Mechanical Data Parameter Units Chip Dimensions Un-sawn 4064 x 4064 µm Chip Thickness (Nominal) 250 µm Anode Pad Size 3048 x 3048 µm Wafer Diameter 127 (subject to change) mm Saw Street 80 (subject to change) µm Wafer orientation on frame Wafer notch parallel with frame flat Topside Metallisation & Thickness Al 6 µm Backside Metallisation & Thickness V/Ni/Ag 0.3 µm Topside Passivation Silicon Nitride Recommended Die Attach Material Soft Solder or Conductive Epoxy Al 380µm X3 Page3 Recommended Wire Bond - Anode Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Sawn Wafer on Film-Frame – Dimensions (inches) Die in Waffle Pack – Dimensions (mm) A X X = 4.19mm ±0.13mm pocket size Y = 4.19mm ±0.13mm pocket size Z = 0.61mm ±0.08mm pocket depth A = 5° ±1/2° pocket draft angle No Cross Slots Array = 6 X 6 (36) Y Z X OVERALL TRAY SIZE Size = 50.67mm ±0.25mm Height = 3.94mm ±0.13mm Flatness = 0.30mm DISCLAIMER THE INFORMATION HEREIN IS GIVEN TO DESCRIBE CERTAIN COMPONENTS AND SHALL NOT BE CONSIDERED AS WARRANTED CHARACTERISTICS. NO RESPONSIBILITY IS ASSUMED FOR ITS USE; NOR FOR ANY INFRINGEMENT OF PATENTS OR OTHER RIGHTS OF THIRD PARTIES WHICH MAY RESULT FROM ITS USE. NO LICENSE IS GRANTED BY IMPLICATION OR OTHERWISE UNDER ANY PATENT OR PATENT RIGHTS OF EITHER MICROSS COMPONENTS OR FAIRCHILD SEMICONDUCTOR CORPORATION. FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. LIFE SUPPORT POLICY FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used here in: (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labelling, can be reasonably expected to result in a significant injury of the user. 2. A critical component in any component of a life support, device, or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. Further Information - Contact your Micross sales office or email your enquiry to [email protected] ©2014 Fairchild Semiconductor Corporation & Micross Components Page4 1. Life support devices or systems are devices or systems which,