JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92 Plastic-Encapsulate Transistors TO-92 3DD13003B TRANSISTOR( NPN ) 1. EMITTER FEATURES 2. COLLECTOR · power switching applications 3. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 0.9 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Symbol Parameter Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 1mA, IE=0 700 V Collector-emitter breakdown voltage V(BR)CEO IC= 10mA, IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 1mA, IC=0 9 V Collector cut-off current ICBO VCB= 700V, IE=0 100 µA Collector cut-off current ICEO VCE= 400V, IB=0 50 µA Emitter cut-off current IEBO VEB= 7V, IC=0 10 µA DC current gain hFE VCE= 10V, IC= 0.4 A Collector-emitter saturation voltage Base-emitter saturation voltage 20 40 VCE(sat)1 IC=1.5A,IB= 0.5A 3 V VCE(sat)2 IC=0.5A, IB= 0.1A 0.8 V VBE(sat) IC=0.5A, IB=0.1A 1 V Transition Frequency fT VCE=10V,IC=100mA, f =1MHz Fall time tf IC=1A Storage time ts IB1=-IB2=0.2A 4 MHz 0.7 µs 4 µs CLASSIFICATION OF hFE Rank Range www.cj-elec.com 20-25 25-30 30-35 1 35-40 D,Oct,2014 Typical Characteristics Typical Characteristics 3DD13003B Static Characteristic hFE 800 600 Ta=100℃ 500 20mA 400 16mA 300 12mA 200 8mA 0 1 0 2 4 6 8 10 COLLECTOR-EMITTER VOLTAGE VBEsat —— 12 14 1 Ic VCEsat COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) β=3,Ta=25℃ β=5,Ta=25℃ 600 β=3,Ta=100 ℃ 400 β=5,Ta=100 ℃ 200 0.1 1 10 IC —— IC TRANSITION FREQUENCY fT (MHz) (mA) T =2 5℃ a T =1 00℃ a 1 400 β=3,Ta=100 ℃ 1 600 —— 800 fT 4 IC 2 1 20 40 60 80 COLLECTOR CURRENT VCB/VEB PC —— 100 IC 120 140 (mA) Ta 1200 Cib COLLECTOR POWER DISSIPATION PC (mW) f=1MHz IC=0/IE=0 1000 Ta=25 ℃ 100 Cob 10 1 REVERSE VOLTAGE www.cj-elec.com —— 1000 1500 (mA) 3 0 10 1000 2000 1 0.1 100 IC COMMON EMITTER VCE=10V Ta=25℃ BASE-EMMITER VOLTAGE VBE (mV) Cob/Cib 10 5 100 0.1 200 β=3,Ta=25℃ COLLECTOR CURRENT COMMON EMITTER VCE=10V 10 β=5,Ta=100 ℃ 100 (mA) IC — — VBE (mA) IC β=5,Ta=25℃ 10 0.1 1000 1500 100 COLLECTOR CURREMT 1500 1000 1000 1500 100 1000 1000 800 10 COLLECTOR CURRENT VCE (V) 1200 COLLECTOR CURRENT IC Ta=25℃ 10 IB=4mA 100 CAPACITANCE CT (pF) IC COMMON EMITTER VCE= 10V 40mA 36mA 32mA 28mA 24mA DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) 700 —— 100 COMMON EMITTER Ta=25℃ 10 V 900 600 300 0 30 0 (V) 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) D,Oct,2014 TO-92 Package Outline Dimensions Symbol A A1 b c D D1 E e e1 L Φ h Dimensions In Millimeters Min Max 3.300 3.700 1.100 1.400 0.380 0.550 0.360 0.510 4.400 4.700 3.430 4.300 4.700 1.270 TYP 2.440 2.640 14.100 14.500 1.600 0.000 0.380 Dimensions In Inches Min Max 0.130 0.146 0.043 0.055 0.015 0.022 0.014 0.020 0.173 0.185 0.135 0.169 0.185 0.050 TYP 0.096 0.104 0.555 0.571 0.063 0.000 0.015 TO-92 Suggested Pad Layout www.cj-elec.com 3 D,Oct,2014 TO-92 7DSHDQG5HHO ZZZFMHOHFFRP4 D,Oct,2014