JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-126C Plastic-Encapsulate Transistors 3DD13003 TO-126C TRANSISTOR (NPN) FEATURES 1.BASE High total power disspation 2.COLLECTOR MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO Parameter Collector-Base Voltage Value 700 Unit V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature 3.EMITTER ℃ -55~150 ELECTRICAL CHARACTERISTICS (Ta =25 ℃ unless otherwise specified) Parameter symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V= IC =1mA, IE 0 (BR)CBO 700 V Collector-emitter breakdown voltage V(BR)CEO = IC=10mA, IB 0 400 V 9 V Emitter-base breakdown voltage = V(BR)EBO IE=1mA, IC 0 Collector cut-off current I= VCB=700V,IE 0 CBO 1 mA Collector cut-off current I= VCE=400V,IB 0 CEO 0.5 mA 1 mA Emitter cut-off current = IEBO VEB=9V, IC 0 DC current gain hFE(1) VCE=5V, IC= 0.5 A 8 hFE(2) VCE=5V, IC= 1.5A 5 40 Collector-emitter saturation voltage = VCE(sat) IC=1A,IB 0.25A V Base-emitter saturation voltage = VBE(sat) IC=1A,IB 0.25A 1.2 V Transition frequency fT VCE=10V,I&=100mA, f =1MHz Fall time tf IC=1A, IB1=-IB2=0.2A, = VCC 100V Storage time ts ,& P$ Base-emitter voltage &/$66,),&$7,212) hFE 5 MHz 0.5 = VBE IE 2A µs 3 μs V 5DQN 5DQJH 8-10 10-15 15-20 20-25 25-30 30-35 35-40 CLASSIFICATION OF tS Rank A1 A2 Range 2-2.5 (ȝs ) 2.5-3(ȝs ) www.cj-elec.com B1 3-3.5(ȝs ) 1 B2 3.5-4 (ȝs ) E,Oct,2014 Typical Characteristics Typical Characteristics 3DD13003 Static Charistic 800 COMMON EMITTER Ta=25℃ 30mA 18mA COLLECTOR CURRENT Ta=25℃ DC CURRENT GAIN IC 21mA 15mA 400 IC Ta=100℃ 24mA 600 —— hFE (mA) 27mA 12mA 9mA 200 10 6mA IB COMMON EMITTER VCE= 5V =3mA 0 1 0 2 4 6 COLLECTOR-EMITTER VOLTAGE —— 8 1 Ta=25℃ Ta=100 ℃ β=4 100 10 IC —— IC —— 100 IC 1000 1500 (mA) IC Ta=100 ℃ Ta=25℃ β=4 10 1 1000 1500 100 COLLECTOR CURREMT 100 VCEsat 1000 1000 1 10 COLLECTOR CURRENT VCE (V) IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) VBEsat 2000 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) hFE 100 10 100 COLLECTOR CURREMT (mA) VBE fT 10 —— 1000 1500 (mA) IC T =2 5℃ a TRANSITION FREQUENCY 100 T =1 00℃ a COLLECTOR CURRENT IC fT (mA) (MHz) 1500 1000 IC 10 COMMON EMITTER VCE=5V 1 0.0 COMMON EMITTER VCE=10V Ta=25℃ 1 0.3 0.6 0.9 1.2 20 5000 Cob/Cib —— VCB/VEB COLLECTOR POWER DISSIPATION PC (W) Ta=25 ℃ Cib CAPACITANCE C (pF) 1000 100 Cob 10 1 0.1 —— IC (mA) Ta 1.25 1.00 0.75 0.50 0.25 0.00 1 REVERSE VOLTAGE www.cj-elec.com PC 1.50 f=1MHz IE=0/IC=0 200 100 COLLECTOR CURRENT BASE-EMMITER VOLTAGE VBE (V) 10 V 0 20 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta 125 150 (℃ ) E,Oct,2014 TO-126C Package Outline Dimensions Symbol A A1 b b1 c D E e e1 L L1 P Φ1 Φ2 www.cj-elec.com Dimensions In Millimeters Min. Max. 3.000 3.400 1.800 2.200 0.660 0.860 1.170 1.370 0.450 0.600 7.800 8.200 10.800 11.200 2.280 TYP. 4.460 4.660 15.300 15.700 1.300 1.500 4.040 4.240 2.700 2.900 3.100 3.300 3 Dimensions In Inches Min. Max. 0.118 0.134 0.071 0.087 0.026 0.034 0.046 0.054 0.018 0.024 0.307 0.323 0.425 0.441 0.090 TYP. 0.176 0.183 0.602 0.618 0.051 0.059 0.159 0.167 0.106 0.114 0.122 0.130 E,Oct,2014