53f3ecea6c0e7868b451fd5d4b68405c

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
TO-251-3L Plastic-Encapsulate Transistors
3DD13003
TO-251-3L
TRANSISTOR ( NPN )
1.. BASE
FEATURES
2. COLLECTOR
Power Switching Applications
3. EMITTER
MAXIMUM RATINGS(TA=25 ℃ unless otherwise noted)
Symbol
Parameter
Value
Unit
VCBO
Collector-Base Voltage
700
V
VCEO
Collector-Emitter Voltage
400
V
VEBO
Emitter-Base Voltage
9
V
IC
Collector Current -Continuous
1.5
A
1.25
W
Collector Dissipation
PC
TJ, Tstg
Junction and Storage Temperature
℃
-55~+150
ELECTRICAL CHARA CTERISTICS (Ta= 25℃ unless otherwise specified)
Parameter
Symbol
Test
conditions
Min
Typ
Max
Unit
Collector-base breakdown voltage
V(BR)CBO
Ic=
=
1mA,IE 0
700
V
Collector-emitter breakdown voltage
V(BR)CEO
Ic==
10 mA,IB 0
400
V
Emitter-base breakdown voltage
V(BR)EBO
9
V
=
IE= 1mA, IC 0
Collector cut-off current
ICBO
=
VCB= 700V,IE 0
1
mA
Collector cut-off current
ICEO
=
VCE= 400V,IB 0
0.5
mA
Emitter cut-off current
IEBO
1
mA
DC current gain
=
VEB= 9 V, IC 0
hFE(1)
VCE= 5 V, IC= 0.5 A
8
hFE(2)
VCE= 5 V, IC= 1.5A
5
40
Collector-emitter saturation voltage
VCE(sat)
IC=1A,IB= 250 mA
0.6
V
Base-emitter saturation voltage
VBE(sat)
IC=1A, IB= 250mA
1.2
V
Base-emitter voltage
VBE
3
V
Transition frequency
fT
Fall time
tf
IC= 1A,IB1=-IB2=0.2A
VCC=100V
Storage time
ts
IC=250mA
IE= 2A
VCE=10V,Ic=100mA
5
f =1MHz
MHz
2
0.5
µs
4
µs
CLASSIFICATION OF hFE(1)
Rank
Range
8-10
10-15
15-20
20-25
25-30
30-35
35-40
CLASSIFICATION OF tS
Rank
A1
Range
2-2.5 (μs )
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A2
B1
2.5-3(μs )
3-3.5(μs )
1
B2
3.5-4 (μs )
E,Oct,2014
Typical Characteristics
Typical Characteristics
3DD13003
Static Characteristic
1.00
COMMON EMITTER
Ta=25℃
30mA
DC CURRENT GAIN
IC
35mA
25mA
0.50
20mA
15mA
0.25
IC
Ta=100℃
hFE
40mA
0.75
——
COMMON EMITTER
VCE= 5V
50mA
45mA
COLLECTOR CURRENT
(A)
hFE
100
Ta=25℃
10
10mA
IB=5mA
0.00
1
0
1
2
3
4
5
COLLECTOR-EMITTER VOLTAGE
VBEsat ——
1200
6
7
1
IC
VCEsat
1000
COLLECTOR-EMITTER SATURATION
VOLTAGE VCEsat (mV)
Ta=25℃
Ta=100 ℃
400
10
IC
0℃
10
T a=
100
℃
25
T a=
IC
——
IC
1
1000 1500
100
COLLECTOR CURREMT
10
(mA)
VBE
PC
1.50
1000 1500
100
COLLECTOR CURRENT
——
IC
(mA)
Ta
COMMON EMITTER
VCE=5V
100
10
T=
a 25
℃
T=
a 10
0℃
IC
(mA)
(mA)
10
1
COLLECTOR POWER DISSIPATION
PC (W)
BASE-EMITTER SATURATION
VOLTAGE VBEsat (mV)
800
200
0.1
COLLECTOR CURRENT
——
IC
β=4
1000
1500
1000
1000 1500
100
COLLECTOR CURRENT
β=4
600
10
VCE (V)
1
0.1
0
200
400
600
800
1.00
0.75
0.50
0.25
0.00
1000
0
BASE-EMMITER VOLTAGE VBE (mV)
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1.25
25
50
75
AMBIENT TEMPERATURE
2
100
Ta
125
150
(℃ )
E,Oct,2014
TO-251-3L Package Outline Dimensions
Symbol
A
A1
B
b
b1
c
c1
D
D1
E
e
e1
L
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Dimensions In Millimeters
Min.
Max.
2.200
2.400
1.050
1.350
1.350
1.650
0.500
0.700
0.700
0.900
0.430
0.580
0.430
0.580
6.350
6.650
5.200
5.400
5.400
5.700
2.300 TYP.
4.500
4.700
7.500
7.900
3
Dimensions In Inches
Min.
Max.
0.087
0.094
0.042
0.054
0.053
0.065
0.020
0.028
0.028
0.035
0.017
0.023
0.017
0.023
0.250
0.262
0.205
0.213
0.213
0.224
0.091 TYP.
0.177
0.185
0.295
0.311
E,Oct,2014