JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L Plastic-Encapsulate Transistors 3DD13003 TO-251-3L TRANSISTOR ( NPN ) 1.. BASE FEATURES 2. COLLECTOR Power Switching Applications 3. EMITTER MAXIMUM RATINGS(TA=25 ℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector-Base Voltage 700 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 9 V IC Collector Current -Continuous 1.5 A 1.25 W Collector Dissipation PC TJ, Tstg Junction and Storage Temperature ℃ -55~+150 ELECTRICAL CHARA CTERISTICS (Ta= 25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO Ic= = 1mA,IE 0 700 V Collector-emitter breakdown voltage V(BR)CEO Ic== 10 mA,IB 0 400 V Emitter-base breakdown voltage V(BR)EBO 9 V = IE= 1mA, IC 0 Collector cut-off current ICBO = VCB= 700V,IE 0 1 mA Collector cut-off current ICEO = VCE= 400V,IB 0 0.5 mA Emitter cut-off current IEBO 1 mA DC current gain = VEB= 9 V, IC 0 hFE（1） VCE= 5 V, IC= 0.5 A 8 hFE（2） VCE= 5 V, IC= 1.5A 5 40 Collector-emitter saturation voltage VCE(sat) IC=1A,IB= 250 mA 0.6 V Base-emitter saturation voltage VBE(sat) IC=1A, IB= 250mA 1.2 V Base-emitter voltage VBE 3 V Transition frequency fT Fall time tf IC= 1A,IB1=-IB2=0.2A VCC=100V Storage time ts IC=250mA IE= 2A VCE=10V,Ic=100mA 5 f =1MHz MHz 2 0.5 µs 4 µs CLASSIFICATION OF hFE(1) Rank Range 8-10 10-15 15-20 20-25 25-30 30-35 35-40 CLASSIFICATION OF tS Rank A1 Range 2-2.5 (μs ) www.cj-elec.com A2 B1 2.5-3(μs ) 3-3.5(μs ) 1 B2 3.5-4 (μs ) E,Oct,2014 Typical Characteristics Typical Characteristics 3DD13003 Static Characteristic 1.00 COMMON EMITTER Ta=25℃ 30mA DC CURRENT GAIN IC 35mA 25mA 0.50 20mA 15mA 0.25 IC Ta=100℃ hFE 40mA 0.75 —— COMMON EMITTER VCE= 5V 50mA 45mA COLLECTOR CURRENT (A) hFE 100 Ta=25℃ 10 10mA IB=5mA 0.00 1 0 1 2 3 4 5 COLLECTOR-EMITTER VOLTAGE VBEsat —— 1200 6 7 1 IC VCEsat 1000 COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) Ta=25℃ Ta=100 ℃ 400 10 IC 0℃ 10 T a= 100 ℃ 25 T a= IC —— IC 1 1000 1500 100 COLLECTOR CURREMT 10 (mA) VBE PC 1.50 1000 1500 100 COLLECTOR CURRENT —— IC (mA) Ta COMMON EMITTER VCE=5V 100 10 T= a 25 ℃ T= a 10 0℃ IC (mA) (mA) 10 1 COLLECTOR POWER DISSIPATION PC (W) BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) 800 200 0.1 COLLECTOR CURRENT —— IC β=4 1000 1500 1000 1000 1500 100 COLLECTOR CURRENT β=4 600 10 VCE (V) 1 0.1 0 200 400 600 800 1.00 0.75 0.50 0.25 0.00 1000 0 BASE-EMMITER VOLTAGE VBE (mV) www.cj-elec.com 1.25 25 50 75 AMBIENT TEMPERATURE 2 100 Ta 125 150 (℃ ) E,Oct,2014 TO-251-3L Package Outline Dimensions Symbol A A1 B b b1 c c1 D D1 E e e1 L www.cj-elec.com Dimensions In Millimeters Min. Max. 2.200 2.400 1.050 1.350 1.350 1.650 0.500 0.700 0.700 0.900 0.430 0.580 0.430 0.580 6.350 6.650 5.200 5.400 5.400 5.700 2.300 TYP. 4.500 4.700 7.500 7.900 3 Dimensions In Inches Min. Max. 0.087 0.094 0.042 0.054 0.053 0.065 0.020 0.028 0.028 0.035 0.017 0.023 0.017 0.023 0.250 0.262 0.205 0.213 0.213 0.224 0.091 TYP. 0.177 0.185 0.295 0.311 E,Oct,2014