JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-251-3L/TO-252-2L Plastic-Encapsulate Transistors 3DD13002 TRANSISTOR (NPN) TO-251-3L TO-252-2L FEATURE Power Switching Applications 1. BASE MAXIMUM RATINGS(Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit VCBO Collector -Base Voltage 600 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 1 A PC Collector Power Dissipation 1.25 W TJ Junction Temperature 150 ℃ Tstg Storage Temperature -55~150 ℃ 2. COLLECTOR 3. EMITTER ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Symbol Test conditions Min Typ Max Unit Collector-base breakdown voltage V(BR)CBO IC= 100μA，IE=0 600 V Collector-emitter breakdown voltage V(BR)CEO IC= 1mA，IB=0 400 V Emitter-base breakdown voltage V(BR)EBO IE= 100μA，IC=0 6 V ICBO VCB= 600V，IE=0 100 µA ICEO VCB= 400V，IE=0 100 µA IEBO VEB= 7V， IC=0 100 µA hFE1 VCE= 10 V, IC= 200mA 9 hFE2 VCE= 10 V, IC= 0.25mA 5 Collector cut-off current Emitter cut-off current Dc current gain 40 Collector-emitter saturation voltage VCE(sat) IC=200mA, IB= 40mA 0.5 V Base-emitter saturation voltage VBE(sat) IC=200mA, IB= 40mA 1.1 V VCE=10V, IC=100mA Transition frequency fT Fall time tf IC=1A, IB1=-IB2=0.2A 0.5 µs Storage time ts VCC=100V 2.5 µs f =1MHz 5 MHz CLASSIFICATION OF hFE1 Range www.cj-elec.com 9-15 15-20 20-25 1 25-30 30-35 35-40 E,Oct,2014 Typical Characteristics Typical Characteristics 3DD13002 Static Characteristic COMMON EMITTER Ta=25℃ 250 —— IC 10mA Ta=100℃ 9mA DC CURRENT GAIN hFE COLLECTOR CURRENT IC (mA) hFE 100 300 8mA 200 7mA 6mA 150 5mA 4mA 100 3mA Ta=25℃ 10 2mA 50 COMMON EMITTER VCE= 10V IB=1mA 0 1 0 2 4 6 8 COLLECTOR-EMITTER VOLTAGE VCEsat —— 10 IC VBEsat 1200 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) T a= ℃ 100 ℃ 25 T a= 100 β=5 5 10 100 COLLECTOR CURREMT IC 1000 —— IC 1000 (mA) IC —— IC 600 T a=1 β=5 10 100 fT 10 T =2 5℃ a COMMON EMITTER VCE=10V 0.9 Cob/Cib —— IC 8 7 6 COMMON EMITTER VCE=10V Ta=25℃ 100 COLLECTOR CURRENT VCB/VEB PC 1.50 COLLECTOR POWER DISSIPATION PC (W) Ta=25 ℃ Cib 100 1 (mA) 5 10 1.2 f=1MHz IE=0/IC=0 10 —— IC 9 BASE-EMMITER VOLTAGE VBE (V) 1000 1000 COLLECTOR CURREMT (mA) 0.6 00 ℃ 400 5 1 0.3 ℃ T a=25 300 VBE T =1 00℃ a 10 800 1000 100 0.1 0.0 CAPACITANCE C (pF) 100 COLLECTOR CURRENT 1000 10 COLLECTOR CURRENT IC (mA) 1 TRANSITION FREQUENCY fT (MHz) COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (mV) 1000 10 VCE (V) Cob —— IC 120 (mA) Ta 1.25 1.00 0.75 0.50 0.25 0.00 0 5 10 REVERSE VOLTAGE www.cj-elec.com 15 V 0 20 25 50 75 AMBIENT TEMPERATURE (V) 2 100 Ta 125 150 (℃ ) E,Oct,2014 TO-251-3L Package Outline Dimensions Symbol A A1 B b b1 c c1 D D1 E e e1 L www.cj-elec.com Dimensions In Millimeters Min. Max. 2.200 2.400 1.050 1.350 1.350 1.650 0.500 0.700 0.700 0.900 0.430 0.580 0.430 0.580 6.350 6.650 5.200 5.400 5.400 5.700 2.300 TYP. 4.500 4.700 7.500 7.900 3 Dimensions In Inches Min. Max. 0.087 0.094 0.042 0.054 0.053 0.065 0.020 0.028 0.028 0.035 0.017 0.023 0.017 0.023 0.250 0.262 0.205 0.213 0.213 0.224 0.091 TYP. 0.177 0.185 0.295 0.311 E,Oct,2014