ROHM DAN202K

DA227/DAN202K/DAN202U/DAN222
DAP202K/DAP202U/DAP222
Diodes
Switching diode
DA227
DAN202K / DAN202U / DAN222
DAP202K / DAP202U / DAP222
DAN202K / DAP202K
DAN202U / DAP202U
0.95 0.95
+0.2
-0.1
2.0±0.2
0.15
+0.1
-0.06
zMarking
0.15±0.05
0.3±0.1
(All pins have the same dimensions)
ROHM : UMD3
EIAJ : SC - 70
JEDEC : SOT - 323
DA227
DAN222 / DAP222
1.25±0.1
0.65
0.2±0.1
0.9±0.1
1.6±0.2
0.7
N20
0.2±0.1
0~0.1
0.5 0.5
0.7±0.1
+0.1
0.2 -0.05
0.8±0.1
2.1±0.1
P
1.0±0.1
+0.1
0.2 -0.05
0.55±0.1
0~0.1
0.2±0.1
0.65 0.65
1.3±0.1
0.15±0.05
0.3 +0.1
-0.05
0.15±0.05
2.0±0.2
ROHM : UMD4
EIAJ : SC - 82
JEDEC : SOT - 343
ROHM : EMD3
EIAJ : SC - 75
JEDEC : SOT - 416
0.1Min.
0.3±0.1
1.6±0.2
0.6
N
0.1Min.
DA227
0.6
0~0.1
ROHM : SMD3
EIAJ : SC - 59
JEDEC : SOT - 346
1.25±0.1
DAN222
DAN202U
DAN202K
DAP222
DAP202U
DAP202K
1.25±0.1
0~0.1
(All pins have the same dimensions)
zConstruction
Silicon epitaxial planar
0.3
0.65
0.3~0.6
0.4
2.8±0.2
0.65
+0.1
-0.05
0.9±0.1
1.3±0.1
0.8±0.1
0.1Min.
1.1
2.1±0.1
2.9±0.2
1.9±0.2
+0.2
-0.1
zFeatures
1) Four types of packaging are
available.
2) High speed. (trr=1.5ns Typ.)
3) Suitable for high packing density
layout.
4) High reliability.
zExternal dimensions (Units : mm)
1.6
zApplication
Ultra high speed switching
DA227/DAN202K/DAN202U/DAN222
DAP202K/DAP202U/DAP222
Diodes
zCircuits
DAP202K
DAP202U
DAP222
DAN202K
DAN202U
DAN222
DA227
zAbsolute maximum ratings (Ta=25°C)
Type
Junction
Storage
Peak reverse DC reverse Peak forward Mean rectifying Surge current Power
dissipation temperature temperature
voltage
voltage
current
current
(1µs)
(TOTAL)
Tj (ºC)
Tstg (ºC)
VRM (V)
VR (V)
IFM (mA)
IO (mA)
Isurge (A)
Pd(mW)
P/N
Type
DAN202K
80
80
300
100
4
200
150
−55~+150
N
DAP202K
80
80
300
100
4
200
150
−55~+150
P
DAN202U
80
80
300
100
4
200
150
−55~+150
N
DAP202U
80
80
300
100
4
200
150
−55~+150
P
DAN222
80
80
300
100
4
150
150
−55~+150
N
DAP222
80
80
300
100
4
150
150
−55~+150
P
DA227
80
80
300
100
4
150
150
−55~+150
N
zElectrical characteristics (Ta=25°C)
Type
Forward voltage
Reverse current
Cond.
Cond.
VF (V)
Max.
IF (mA)
IR (µA)
Max.
VR (V)
Capacitance between terminals
CT (pF)
Max.
Cond.
VR (V) f (MHz)
Reverse recovery time
trr (ns)
Max.
Cond.
VR (V)
IF (mA)
DAN202K
1.2
100
0.1
70
3.5
6
1
4
6
5
DAP202K
1.2
100
0.1
70
3.5
6
1
4
6
5
DAN202U
1.2
100
0.1
70
3.5
6
1
4
6
5
DAP202U
1.2
100
0.1
70
3.5
6
1
4
6
5
DAN222
1.2
100
0.1
70
3.5
6
1
4
6
5
DAP222
1.2
100
0.1
70
3.5
6
1
4
6
5
DA227
1.2
100
0.1
70
3.5
6
1
4
6
5
DA227/DAN202K/DAN202U/DAN222
DAP202K/DAP202U/DAP222
Diodes
125
1000
50
Ta=100ºC
100
75
50
25
25
50
75
100
125
10
5
2
1
0.5
0.2
0.1
0
150
Ta=85ºC
50ºC
25ºC
0ºC
−30ºC
0.2
AMBIENT TEMPERATURE :Ta (ºC)
0.4
0.6
0.8
1.0
1.2
1.4
Fig.1 Power attenuation curve
REVERSE CURRENT : IR (nA)
5
Ta=85ºC
50ºC
25ºC
0ºC
−30ºC
0.2
0.2
0.4
0.6
0.8
1.0
1.2
FORWARD VOLTAGE : VF
1.6
1.4
(V)
0.1
10
75°C
100
50°C
10
25°C
1
0°C
−25°C
0.1
0.01
0
10
20
30
40
50
60
30
70
80
2
P Type
N Type
0
0
2
4
6
8
10 12 14 16 18 20
Fig.6 Capacitance between
terminals characteristics
D.U.T.
VR=6V
5Ω
8
PULSE GENERATOR
OUTPUT 50Ω
7
50Ω
SAMPLING
OSCILLOSCOPE
6
5
4
2
N Type
1
1
2
3
4
5
6
7
FORWARD CURRENT : IF
8
9
100ns
10
(mA)
Fig.7 Reverse recovery time
OUTPUT
trr
0
IR
0
0
INPUT
e
P Typ
3
50
f=1MHz
REVERSE VOLTAGE : VR (V)
0.01µF
9
40
4
Fig.5 Reverse characteristics
(N Type)
10
20
Fig.3 Reverse characteristics
(P Type)
REVERSE VOLTAGE : VR (V)
Fig.4 Forward characteristics
(N Type)
REVERSE RECOVERY TIME : trr (ns)
−25ºC
0.1IR
FORWARD CURRENT : IF (mA)
10
0.1
0
0ºC
1
REVERSE VOLTAGE : VR (V)
Ta=100°C
1000
0.5
25ºC
Fig.2 Forward characteristics
(P Type)
20
1
50ºC
10
0.01
0
1.6
50
2
75ºC
100
FORWARD VOLTAGE : VF (V)
CAPACITANCE BETWEEN TERMINALS : CT (pF)
0
0
20
REVERSE CURRENT : IR (nA)
FORWARD CURRENT : IF (mA)
POWER DISSIPATION : Pd / Pd Max.(%)
zElectrical characteristic curves (Ta=25°C)
Fig.8 Reverse recovery time (trr) measurement circuit
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Datasheets for electronics components.