21f1b17610e95fc1e908f928f8314add

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD
DFNWB3*2-8L-B Plastic-Encapsulate MOSFETS
CJ5903DC
V(BR)DSS
Dual P-Channel MOSFET
70 mΩ@-4.5V
-20V
DFNWB3*2-8L-B
ID
RDS(on)MAX
-4.5A 90 mΩ@-2.5V
120 mΩ@-1.8V
D1
D2
APPLICATION
FEATURE
 TrenchFET Power MOSFET
 Load Swith,PA Switch and Battery Switch for Portable
 Devices and Game Consoles
MARKING
Equivalent Circuit
 Surface Mount Package
MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)
Symbol
Value
Unit
Drain-Source Voltage
VDS
-20
V
Gate-Source Voltage
VGS
±10
V
ID
-4.5
A
Pulsed Drain Current
IDM *
-18
A
Thermal Resistance from Junction to Ambient
RθJA
113.6
℃/W
Junction Temperature
Tj
150
℃
Storage Temperature
Tstg
-55~+150
℃
Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s)
TL
260
℃
Parameter
Continuous Drain Current
* Repetitive rating : Pulse width limited by junction temperature.
www.cj-elec.com
1
A-2,May,2015
MOSFET ELECTRICAL CHARACTERISTICS
Ta =25 ℃ unless otherwise specified
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
STATIC PARAMETERS
Drain-source breakdown voltage
V (BR) DSS
VGS = 0V, ID =-250µA
Zero gate voltage drain current
IDSS
VDS =-16V,VGS = 0V
-1
µA
Gate-body leakage current
IGSS
VGS =±10V, VDS = 0V
±10
uA
VGS(th)
VDS =VGS, ID =-250µA
-1
V
VGS =-4.5V, ID =-4.3A
70
mΩ
VGS =-2.5V, ID =-3.6A
90
mΩ
VGS =-1.8V, ID =-1.5A
120
mΩ
Gate threshold voltage (note 1)
Drain-source on-resistance (note 1)
RDS(on)
Forward tranconductance (note 1)
gFS
VDS =-6V, ID =-4.6A
Diode forward voltage(note 1)
VSD
IS=-4.5A, VGS = 0V
-20
V
-0.4
12
S
-1.2
V
DYNAMIC PARAMETERS (note 2)
Input Capacitance
Ciss
Output Capacitance
Coss
Reverse Transfer Capacitance
Crss
Total gate charge
Qg
Gate-source charge
Qgs
Gate-drain charge
Qgd
VDS =-6V,VGS =0V,f =1MHz
1500
pF
260
pF
250
pF
16
VDS =-6V,VGS =-4.5V,ID =-5.6A
nC
2.3
nC
2.5
nC
SWITCHING PARAMETERS(note 2)
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
td(on)
tr
td(off)
35
ns
VGS=-4.5V,VDD=-6V,
35
ns
Rg=1Ω,RL=1.3Ω,ID≌-4.5A
50
ns
25
ns
tf
Notes :
1.
Pulse Test : Pulse width≤300µs, duty cycle≤0.5%.
2.
Guaranteed by design, not subject to production testing.
www.cj-elec.com
2
A-2,May,2015
DFNWB3X2-8L-B Package Outline Dimensions
1
1
1
1
DFNWB3X2-8L-B
www.cj-elec.com
3
A-2,May,2015
DFNWB3X2-8L Tape and Reel
www.cj-elec.com
4
A-2,May,2015