JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD DFNWB3×2-08L-B Power Management MOSFETs-Schottky CJ5853DCB P-channel MOSFET and Schottky Barrier Diode V(BR)DSS/VR ID/IO RDS(on)MAX DFNWB3×2-08L-B 110mΩ@-4.5V -20V -2.7A 160mΩ@-2.5V 240mΩ@-1.8V 20V 0.5A / FEATURE APPLICATION z Independent Pinout to Each Device to z Li-lon Battery Charging z High Side DC-DC Conversion Circuits z High Side Drive for Small Brushless DC Motors z Power Management in Portable， Battery Powered Products Ease Circuit Design z Ultra low V F z Featuring a MOSFET and a Schottky Barrier Diode MARKING Equivalent Circuit MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter Value Unit P-MOSFET VDS Drain-Source Voltage -20 V VGS Gate-Source Voltage ±8 V Continuous Drain Current -2.7 A Pulse Drain Current -10 A Peak Repetitive Reverse Voltage 20 V VR DC Blocking Voltage 20 V IO Average Rectified Forward Current 0.5 A Power Dissipation 1.1 W Thermal Resistance from Junction to Ambient 114 ℃/W Tj Junction Temperature 150 ℃ Tstg Storage Temperature -55~+150 ℃ TL Lead Temperature for Soldering Purposes(1/8’’ from case for 10 s) 260 ℃ ID IDM* Schottky Barrier Diode VRRM Power Dissipation, Temperature and Thermal Resistance PD RθJA *Repetitive rating：Pluse width limited by junction temperature. www.cj-elec.com 1 A,May,2015 MOSFET ELECTRICAL CHARACTERISTICS Ta =25 ℃ unless otherwise specified Parameter Symbol Test conditions Min Typ Max Unit P-MOSFET STATIC PARAMETERS Drain-source breakdown voltage V (BR)DSS VGS =0V, ID=-250µA IDSS VDS =-16V,VGS = 0V IGSS VGS =±8V, VDS = 0V Zero gate voltage drain current Gate-body leakage current Gate threshold voltage Drain-source on-resistance(note1) VGS(th) RDS(on) VDS =VGS, ID =-250µA -20 V -1 µA ±100 nA -0.45 V VGS =-4.5V, ID =-2.7A 110 mΩ VGS =-2.5V, ID =-2.2A 160 mΩ VGS =-1.8V, ID =-1A 240 mΩ Forward transconductance(note1) gFS VDS=-10V,ID=-2.7A Diode forward voltage(note1) VSD IS=-0.9A, VGS = 0V 7 S -1.2 V 300 pF 150 pF DYNAMIC PARAMETERS (note 2) Input capacitance Ciss Output capacitance Coss Reverse transfer capacitance Crss 50 pF td(on) 25 ns VGS=-4.5V,VDD=-10V, 45 ns RL=10Ω,RG=6Ω, ID=-1A 45 ns 40 ns 6.5 nC VDS =-10V,VGS =0V,f =1MHz SWITCHING PARAMETERS (note 2) Turn-on delay time Turn-on rise time Turn-off delay time Turn-off fall time tr td(off) tf Total Gate Charge Qg Gate-Source Charge Qgs Gate-Drain Charge Qgd VDS =-10V,VGS =-4.5V, ID =-2.7A 1.4 nC 0.65 nC SCHOTTKY BARRIER DIODE Forward voltage VF IF=0.5A 0.48 V Reverse current IR VR=20V 100 µA Junction capacitance Cj VR=10V,f=1MHz 41 pF Note: 1.Pulse test: pulse width =300μs, duty cycle≤ 2% 2.These parameters have no way to verify. www.cj-elec.com 2 A,May,2015 7\SLFDO&KDUDFWHULVWLFV P-channel Characteristics Output Characteristics Transfer Characteristics -18 -20 Ta=25℃ Pulsed -16 ID (A) -14 (A) VGS=-3V -12 DRAIN CURRENT ID DRAIN CURRENT VDS=-3V -16 VGS=-4V,-5V,-6V Pulsed VGS=-2V -8 Ta=25℃ -12 -10 Ta=100℃ -8 -6 -4 -4 VGS=-1.5V -2 -0 -0 -1 -2 -3 -4 DRAIN TO SOURCE VOLTAGE VDS -0 -0.0 -5 (V) -0.5 -1.0 -1.5 -2.0 -2.5 GATE TO SOURCE VOLTAGE -3.0 VGS -3.5 -4.0 (V) RDS(ON) —— VGS RDS(ON) —— ID 300 180 Ta=25℃ Pulsed Pulsed ID=-2.6A (m) RDS(ON) VGS=-1.8V 120 ON-RESISTANCE ON-RESISTANCE RDS(ON) (m) 150 VGS=-2.5V 90 VGS=-4.5V 60 30 -0.5 200 Ta=100℃ 100 Ta=25℃ 0 -1.0 -1.5 -2.0 DRAIN CURRENT -2.5 ID -3.0 -0 (A) -1 -2 -3 GATE TO SOURCE VOLTAGE -4 VGS -5 (V) Threshold Voltage IS —— VSD -3 -1.0 -0.1 -0.0 -0.4 Ta=25℃ -0.8 -1.2 SOURCE TO DRAIN VOLTAGE www.cj-elec.com -0.8 VTH Ta=100℃ THRESHOLD VOLTAGE -1 SOURCE CURRENT IS (A) (V) Pulsed ID=-250uA -0.6 -0.4 -0.2 25 -1.6 VSD (V) 50 75 JUNCTION TEMPERATURE 3 100 Tj 125 (℃ ) A,May,2015 7\SLFDO&KDUDFWHULVWLFV Schottky Characteristics Foward Characteristics (uA) T= a 2 5℃ REVERSE CURRENT IR 100 T= a 1 00 ℃ IF FORWARD CURRENT Reverse Characteristics 1000 (mA) 1000 10 100 Ta=100℃ Ta=25℃ 10 1 1 0.0 0.2 0.4 FORWARD VOLTAGE 0.6 VF 0 0.8 (V) 5 10 15 REVERSE VOLTAGE 20 VR 25 30 (V) Capacitance Characteristics 120 Ta=25℃ CAPACITANCE BETWEEN TERMINALS CT (pF) f=1MHz 90 60 30 0 0 5 10 15 REVERSE VOLTAGE www.cj-elec.com 20 VR 25 30 (V) 4 A,May,2015 DFNWB3X2-8L-B Package Outline Dimensions 1 1 1 1 DFNWB3X2-8L-B www.cj-elec.com 5 A,May,2015 DFNWB3X2-8L Tape and Reel www.cj-elec.com 6 A,May,2015