ROHM UMT1N_08

EMT1 / UMT1N / IMT1A
Transistors
General Purpose Transistor
(Isolated Dual Transistors)
EMT1 / UMT1N / IMT1A
zDimensions (Unit : mm)
zFeatures
1) Two 2SA1037AK chips in a EMT or UMT or SMT
package.
2) Mounting possible with EMT3 or UMT3 or SMT3
automatic mounting machines.
3) Transistor elements are independent,
eliminating interference.
EMT1
(6) (5) (4)
(1) (2) (3)
Each lead has same dimensions
ROHM : EMT6
UMT1N
zStructure
Epitaxial planar type
PNP silicon transistor
(6) (5) (4)
zEquivalent circuit
EMT1 / UMT1N
(3)
(2)
Abbreviated symbol : T1
(1) (2) (3)
IMT1A
(1)
(4)
(5)
(6)
Tr1
Each lead has same dimensions
ROHM : UMT6
EIAJ : SC-88
Tr1
Tr2
Abbreviated symbol : T1
Tr2
IMT1A
(4)
(5)
(3)
(6)
(2)
(1)
(4)
(5)
(6)
(3)
(2)
(1)
The following characteristics apply to both
Tr1 and Tr2.
zAbsolute maximum ratings (Ta = 25°C)
Each lead has same dimensions
Symbol
Limits
Unit
Collector-base voltage
VCBO
−60
V
Collector-emitter voltage
VCEO
−50
V
Emitter-base voltage
VEBO
−6
V
−150
mA
Parameter
Collector current
Collector
EMT1, UMT1N
power
dissipation IMT1A
IC
PC
150 (TOTAL)
mW
300 (TOTAL)
Junction temperature
Tj
150
°C
Storage temperature
Tstg
−55 to +150
°C
ROHM : SMT6
EIAJ : SC-74
Abbreviated symbol : T1
∗1
∗2
∗1 120mW per element must not be exceeded.
∗2 200mW per element must not be exceeded.
Rev.C
1/ 3
EMT1 / UMT1N / IMT1A
Transistors
zElectrical characteristics (Ta = 25°C)
Symbol
Min.
Typ.
Max.
Unit
Collector-base breakdown voltage
Parameter
BVCBO
−60
−
−
V
IC = −50µA
Collector-emitter breakdown voltage
BVCEO
−50
−
−
V
IC = −1mA
Emitter-base breakdown voltage
BVEBO
−6
−
−
V
IE = −50µA
Collector cutoff current
ICBO
−
−
−0.1
µA
VCB = −60V
Emitter cutoff current
IEBO
−
−
−0.1
µA
VEB = −6V
VCE(sat)
−
−
−0.5
V
IC/IB = −50mA/−5mA
hFE
120
−
560
−
fT
−
140
−
MHz
Cob
−
4
5
pF
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Output capacitance
Conditions
VCE = −6V, IC = −1mA
VCE = −12V, IE = 2mA, f = 100MHz
VCB = −12V, IE = 0A, f = 1MHz
zPackaging specifications
Package
Type
Taping
Code
T2R
TN
T110
Basic ordering unit (pieces)
8000
3000
3000
−
−
EMT1
UMT1N
−
IMT1A
−
−
−
zElectrical characteristic curves
-5
-2
-1
-0.5
-0.2
-8
-24.5
-21.0
-6
-17.5
-14.0
-4
-10.5
-7.0
-2
-3.5µA
Ta = 25°C
-500
-450
-400
-350
-300
-80
-250
-60
-200
-150
-40
-100
-20
-50µA
IB = 0
-0.4
-0.8
-1.2
-1.6
Ta = 100°C
DC CURRENT GAIN : hFE
25°C
100
-40°C
200
100
50
50
VCE = -6V
-0.2
-0.5
-1
-2
-5
-10 -20
-50 -100
COLLECTOR CURRENT : IC (mA)
Fig.4 DC current gain vs. collector
current ( Ι )
-0.2
-0.5
-1
-2
-5
-10 -20
-50 -100
COLLECTOR CURRENT : IC (mA)
Fig.5 DC current gain vs. collector
current ( ΙΙ )
-1
-2
-3
-4
-5
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.3 Grounded emitter output
characteristics ( ΙΙ )
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
500
200
0
Fig.2 Grounded emitter output
characteristics ( Ι )
VCE = -5V
-3V
-1V
Ta = 25°C
IB = 0
-2.0
COLLECTOR TO EMITTER VOLTAGE : VCE (V)
Fig.1 Grounded emitter propagation
characteristics
DC CURRENT GAIN : hFE
-100
-31.5
-28.0
0
-0.2 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1.6
BASE TO EMITTER VOLTAGE : VBE (V)
500
-35.0
Ta = 25°C
COLLECTOR CURRENT : IC (mA)
-10
-0.1
-10
VCE = −6V
Ta = 100°C
25°C
-20
−40°C
COLLECTOR CURRENT : IC (mA)
COLLECTOR CURRENT : Ic (mA)
-50
-1
Ta = 25°C
-0.5
-0.2
IC/IB = 50
20
-0.1
10
-0.05
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
COLLECTOR CURRENT : IC (mA)
Fig.6 Collector-emitter saturation
voltage vs. collector current ( Ι )
Rev.C
2/ 3
EMT1 / UMT1N / IMT1A
lC/lB = 10
-0.5
-0.2
Ta = 100°C
25°C
-40°C
-0.1
-0.05
-0.2
-0.5
-1
-2
-5
-10
-20
-50 -100
COLLECTOR CURRENT : IC (mA)
Fig.7 Collector-emitter saturation
voltage vs. collector current ( ΙΙ )
Ta = 25°C
VCE = -12V
500
200
100
50
0.5
1
2
5
10
20
50
EMITTER CURRENT : IE (mA)
Fig.8 Gain bandwidth product vs.
emitter current
100
COLLECTOR OUTPUT CAPACITANCE : Cob (pF)
EMITTER INPUT CAPACITANCE
: Cib (pF)
1000
-1
TRANSITION FREQUENCY : fT (MHz)
COLLECTOR SATURATION VOLTAGE : VCE(sat) (V)
Transistors
20
Ta = 25°C
f = 1MHz
IE = 0A
IC = 0A
Cib
10
Co
b
5
2
-0.5
-1
-2
-5
-10
-20
COLLECTOR TO BASE VOLTAGE : VCB (V)
EMITTER TO BASE VOLTAGE
: VEB (V)
Fig.9 Collector output capacitance vs.
collector-base voltage
Emitter input capacitance vs.
emitter-base voltage
Rev.C
3/ 3
Appendix
Notes
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The contents described herein are subject to change without notice. The specifications for the
product described in this document are for reference only. Upon actual use, therefore, please request
that specifications to be separately delivered.
Application circuit diagrams and circuit constants contained herein are shown as examples of standard
use and operation. Please pay careful attention to the peripheral conditions when designing circuits
and deciding upon circuit constants in the set.
Any data, including, but not limited to application circuit diagrams information, described herein
are intended only as illustrations of such devices and not as the specifications for such devices. ROHM
CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any
third party's intellectual property rights or other proprietary rights, and further, assumes no liability of
whatsoever nature in the event of any such infringement, or arising from or connected with or related
to the use of such devices.
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otherwise dispose of the same, no express or implied right or license to practice or commercially
exploit any intellectual property rights or other proprietary rights owned or controlled by
ROHM CO., LTD. is granted to any such buyer.
Products listed in this document are no antiradiation design.
The products listed in this document are designed to be used with ordinary electronic equipment or devices
(such as audio visual equipment, office-automation equipment, communications devices, electrical
appliances and electronic toys).
Should you intend to use these products with equipment or devices which require an extremely high level
of reliability and the malfunction of which would directly endanger human life (such as medical
instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers
and other safety devices), please be sure to consult with our sales representative in advance.
It is our top priority to supply products with the utmost quality and reliability. However, there is always a chance
of failure due to unexpected factors. Therefore, please take into account the derating characteristics and allow
for sufficient safety features, such as extra margin, anti-flammability, and fail-safe measures when designing in
order to prevent possible accidents that may result in bodily harm or fire caused by component failure. ROHM
cannot be held responsible for any damages arising from the use of the products under conditions out of the
range of the specifications or due to non-compliance with the NOTES specified in this catalog.
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Copyright © 2008 ROHM CO.,LTD.
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Appendix1-Rev2.0