MP6T2 Transistors Medium Power Transistor (−32V, −2A) MP6T2 zDimensions (Unit : mm) zApplications Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = −0.5V(Typ.) (IC / IB = −2A / −0.2A) 2) Contain two 2SB1188-dies in a package. zStructure PNP silicon epitaxial planar transistor zPackaging specifications Package Type (6) (5) (4) (1) (2) (3) zInner circuit Taping Code (6) TR Basic ordering unit(pieces) (5) (4) 1000 MP6T2 <Tr2> <Tr1> (1) (2) (1) Emitter <Tr1> (2) Base <Tr1> (3) Collector <Tr2> (4) Emitter <Tr2> (5) Base <Tr2> (6) Collector <Tr1> (3) zAbsolute maximum ratings (Ta=25°C) <Tr1, Tr2> Parameter Symbol Limits Unit Collector-base voltage VCBO −40 V Collector-emitter voltage VCEO −32 V Emitter-base voltage VEBO −5 V Continuous IC −2.0 A Pulsed ICP ∗1 −2.5 A Power dissipation PD ∗2 2.0 W / TOTAL 1.4 W / ELEMENT Junction temperature Tj 150 °C Tstg −55 to +150 °C Collector current Range of storage temperature ∗1 ∗2 Pw=10ms 1 Pulse Mounted on a ceramic board Rev.A 1/3 MP6T2 Transistors zElectrical characteristics (Ta=25°C) <Tr1, Tr2> Symbol Min. Typ. Max. Unit Collector-Emitter breakdown voltage BVCEO −32 − − V IC= −1mA Collector-base breakdown voltage BVCBO −40 − − V IC= −50µA Emitter-base breakdown voltage BVEBO −5 − − V IE= −50µA Collector cut off current ICBO − − −1.0 µA VCB= −20V Emitter cut off current IEBO − − −1.0 µA VEB= −4V VCE(sat)∗ − −500 −800 mV hFE 120 − 390 − fT − 100 − MHz Cob − 50 − pF Parameter Collector-emitter saturation voltage DC current gain Transition frequency Collector output capacitance Conditions IC/IB= −2.0A/−200mA VCE= −3V, IC= −500mA VCE= −5V, IE= 500mA, f=100MHz VCB= −10V, IE=0A, f=1MHz ∗ Pulsed zElectrical characteristics curves −0.5 −200 −100 −50 −20 −10 −5 −1.75mA 100 50 20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLECTOR CURRENT : IC (mA) Fig.4 DC Current Gain vs. Collector Current ( ) −1mA −750µA −500µA −0.1 0 200 100 50 −0.4 −0.8 −1.2 IB=0A −1.6 −2 20 −200 −50 IC/IB=50 20 10 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLECTOR CURRENT : IC (mA) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current ( ) −50 −100 −200 −500 −1000 −2000 Fig.3 DC Current Gain vs. Collector Curren ( ) Fig.2 Grounded Emitter Output Characteristics −500 Ta=25°C −5 −10 −20 COLLECTOR CURRENT : IC (mA) COLLECTOR TO EMITTER VOLTAGE : VCE (V) −100 VCE= −6V −3V −1V −250µA 0 COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) DC CURRENT GAIN : hFE 200 −1.25mA −0.2 Fig.1 Grounded Emitter Propagation Characteristics VCE= −3V −1.5mA −0.3 BASE TO EMITTER VOLTAGE : VBE (V) Ta=100°C 25°C −25°C −2mA −0.4 0 −0.2 −0.4 −0.6 −0.8 −1.0 −1.2 −1.4 −1.6 −1.8 −2.0 −2.2 500 −2.25mA COLLECTOR SATURATION VOLTAGE : VCE(sat) (mV) −2 −1 Ta=25°C 500 −2.5mA Ta=25°C DC CURRENT GAIN : hFE COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (mA) VCE= −3V −1000 Ta=100°C 25°C −500 −40°C −500 lC/lB=10 −200 −100 −50 Ta=100°C 25°C −40°C −20 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 COLLECTOR CURRENT : IC (mA) Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current ( ) Rev.A 2/3 MP6T2 −1 IC /IB=10 −0.5 −0.2 −0.1 −0.05 200 100 50 −5 −10 −20 −50 −100 −200 −500 −1000 −2000 5 COLLETOR CURRENT : IC (mA) 10 20 50 100 200 500 1000 2000 300 Ta=25°C f=1MHz IE=0A IC=0A Cib 200 100 Cob 50 20 10 −0.5 −1 −2 −5 −10 −20 −30 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IE (mA) Fig.7 Base-Emitter Saturation Voltage vs. Collector Current Fig.8 Gain Bandwidth Product vs. Emitter Current Fig.9 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage -10 10 Ta=25℃ COLLECTOR CURRENT : IC (A) Normalized Transient Thermal Resistance : r(t) Ta=25°C VCE= −5V 500 COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25°C TRANSITION FREQUENCY : fT (MHz) BASE SATURATION VOLTAGE : VBE(sat)(V) Transistors 1 0.1 100ms 10ms 1ms -1 DC -0.1 Ta=25℃ Single Pulse 0.01 0.001 0.01 0.1 1 10 100 Pulse width : Pw(s) Fig.10 Normalized Thermal Resistance (Element) - 0.01 -0.1 1000 -1 - 10 - 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.11 Safe Operating Area (Tr1 & Tr2) Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0