2SC4617EB Transistors General purpose small signal amplifier (50V, 0.15A) 2SC4617EB zDimensions (Unit : mm) EMT3F 1.6 zStructure NPN silicon epitaxial planar transistor 0.7 0.37 0.45 1.6 0.86 0.37 0.26 (3) (1) 0.5 0.5 1.0 0.45 zFeatures 1) Excellent hFE linearity. 2) Complements the 2SA1774EB. (2) 0.13 Each lead has same dimensions (1) Base (2) Emitter (3) Collector Abbreviated symbol : B zAbsolute maximum (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 50 V Emitter-base voltage VEBO 7 V IC 150 Collector current mA ICP ∗1 200 Power dissipation PD ∗2 150 mW Junction temperature Tj 150 °C Tstg −55 to +150 °C Range of storage temperature ∗1 Pw=1ms Single pulse ∗2 Each terminal mounted on a recommended land 1/3 2SC4617EB Transistors zElectrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO 50 − − V IC=1mA Collector-base breakdown voltage BVCBO 60 − − V IC=50µA Emitter-base breakdown voltage BVEBO 7 − − V IE=50µA ICBO − − 100 nA VCB=60V Collector cutoff current Conditions IEBO − − 100 nA VEB=7V VCE(sat) − − 400 mV IC/IB=50mA/5mA hFE 82 − 560 − VCE=6V, IC=1mA Transition frequency fT − 180 − MHz Output capacitance Cob − 2 3.5 pF Emitter cutoff current Collector-emitter saturation voltage DC current gain VCE=12V, IE=−2mA, f=100MHz VCE=12V, IE=0A, f=1MHz hFE rank categories Rank P Q R S hFE 82 to 180 120 to 270 180 to 390 270 to 560 zElectrical characterristic curves COLLECTOR CURRENT : IC (mA) 2 1 25°C −55°C 5 0.5 0.2 0.25mA 60 0.20mA 0.15mA 40 0.10mA 20 0.05mA IB=0A 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Fig.1 Fig.2 Grounded emitter propagation characteristics 1.2 DC CURRENT GAIN : hFE VCE=5V 3V 1V 100 50 20 2 5 10 20 50 100 200 1.6 VCE=5V 25°C 200 −55°C 100 50 20 10 0.2 27µA 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) 24µA 21µA 6 18µA 15µA 12µA 4 9µA 6µA 2 3µA 0 0 2.0 30µA Ta=25°C 8 4 IB=0A 12 8 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Grounded emitter output characteristics ( Ι ) Ta=100°C 200 0.5 1 0.8 500 Ta=25°C 10 0.2 0.4 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) DC CURRENT GAIN : hFE 0.30mA 0 0.1 0 500 80 10 Fig.3 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 10 Ta=100°C COLLECTOR CURRENT : IC (mA) 20 0.50mA mA 0.45 A 0.40m 0.35mA Ta=25°C VCE=6V COLLECTOR CURRENT : IC (mA) 100 50 Grounded emitter output characteristics ( ΙΙ ) 0.5 Ta=25°C 0.2 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig. 6 Collector-emitter saturation voltage vs. collector current 2/3 2SC4617EB IC/IB=10 0.2 Ta=100°C 25°C −55°C 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.5 IC/IB=50 Ta=100°C 25°C −55°C 0.2 0.1 0.05 0.02 0.01 0.2 COLLECTOR CURRENT : IC (mA) 5 Co b 1 0.2 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25°C f=1MHz IE=0A IC=0A 2 2 5 10 20 50 100 Ta=25°C VCE=6V 500 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : IE (mA) Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙ) 20 Cib 0.5 1 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι ) 10 TRANSITION FREQUENCY : fT (MHz) 0.5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors Fig.9 Gain bandwidth product vs. emitter current Ta=25°C f=32MHZ VCB=6V 200 100 50 20 10 −0.2 −0.5 −1 −2 −5 −10 EMITTER CURRENT : IE (mA) Fig.11 Base-collector time constant vs. emitter current 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2007 ROHM CO.,LTD. THE AMERICAS / EUPOPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21, Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0