EMZ8 / UMZ8N Transistors Power management (dual transistors) EMZ8 / UMZ8N zFeature 1) Both a 2SA2018 chip and 2SC2412K chip in a EMT or UMT package. zDimensions(Unit : mm) EMZ8 (6) (5) (4) zEquivalent circuits (1) (2) (3) ROHM : EMT6 EIAJ : (3) (2) Each lead has same dimensions (1) UMZ8N Tr2 Tr1 (6) (5) (4) (4) (5) (6) (1) (2) (3) ROHM : UMT6 EIAJ : SC-88 Each lead has same dimensions zAbsolute maximum ratings (Ta=25°C) Parameter Symbol Limits Tr2 Unit Collector-base voltage VCBO Tr1 −15 Collector-emitter voltage VCEO −12 50 Emitter-base voltage VEBO −6 7 V Collector current IC ICP −500 −1 150 − mA A Collector power dissipation PC 150 (TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗ 120mW per element must not be exceeded. 60 V V ∗ zPackage, marking, and packaging specifications Part No. EMZ8 UMZ8N Package Marking EMT6 Z8 UMT6 Z8 Code Basic ordering unit (pieces) T2R 8000 TR 3000 Rev.C 1/4 EMZ8 / UMZ8N Transistors zElectrical characteristics (Ta=25°C) Tr1 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance Symbol Min. Typ. Max. Unit BVCBO −15 − − V IC = −10µA Conditions BVCEO −12 − − V IC = −1mA BVEBO −6 − − V IE = −10µA ICBO − − −0.1 µA VCB = −15V IEBO − − −0.1 µA VEB = −6V VCE(sat) −0.1 IC/IB = −200mA/−10mA − −0.25 680 V hFE − 270 fT − 260 − − MHz Cob − 6.5 − pF Symbol Min. Typ. Max. Unit BVCBO 60 − − V BVCEO 50 − − V IC = 1mA BVEBO 7 − V IE = 50µA ICBO − − − 0.1 µA VCB = 60V IEBO − − 0.1 VEB = 7V VCE(sat) − 0.4 hFE − 120 µA V − 560 − fT − 180 − 2 − 3.5 MHz Cob VCE = −2V , IC = −10mA VCE = −2V , IE = 10mA , f = 100MHz VCB = −10V , IE = 0A , f = 1MHz Tr2 Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Output capacitance pF Conditions IC = 50µA IC/IB = 50mA/5mA VCE = 6V , IC = 1mA VCE = 12V , IE = −2mA , f = 100MHz VCB = 12V , IE = 0A , f = 1MHz zElectrical characteristic curves <Tr1> Ta=125°C Ta=25°C Ta= −40°C 100 50 20 10 5 160 40 1.5 Fig.1 Grounded Emitter Propagation Characteristics IB =0µA 1000 COLLECTOR SATURATION VOLTAGE : VCE (sat) (mV) 100 Ta=125°C Ta=25°C Ta= −40°C 50 20 10 5 Ta=25°C 200 100 50 5 2 1 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.4 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) IC / IB=20 IC / IB=10 10 1 2 IC / IB=50 20 2 1 50 20 10 5 Ta=25°C pulsed 500 200 Ta=125°C Ta=25°C Ta= −40°C 100 2 1 1 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.3 DC Current Gain vs. Collector Current Fig.2 Typical Output Characteristics 500 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) IB =100µA 200 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 1.8 2 COLLECTOR TO EMITTER VOLTAGE : VCE (V) BASE TO EMITTER VOLTAGE : VBE (V) IC / IB=20 IB =200µA 60 0 1000 IB =300µA 80 1 1.0 IB =400µA 100 20 0.5 I B =500µA 120 VCE=2V 500 140 2 0 IB =600µA BASER SATURATION VOLTAGE : VBE (sat) (mV) 200 1000 I B =700µA 180 DC CURRENT GAIN : hFE 200 VCE=2V 500 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) 1000 10000 IC / IB=20 5000 Ta= −40°C Ta=25°C Ta=125°C 2000 1000 500 200 100 50 20 10 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC (mA) Fig.6 Base-Emitter Saturation Voltage vs.Collecter Current Rev.C 2/4 EMZ8 / UMZ8N TRANSITION FREQUENCY : fT (MHz) 1000 VCE=2V Ta=25°C 500 200 100 50 20 10 5 2 1 1 2 5 10 20 50 100 200 500 1000 EMITTER INPUT CAPACITANCE : Cib (pF) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Transistors 1000 200 100 50 Cib 20 10 Cob 5 2 1 0.1 0.2 0.5 1 2 5 10 20 50 100 EMITTER TO BASE VOLTAGE : VEB (V) EMITTER CURRENT : IC (mA) Fig.7 Gain Bandwidth Product vs. Emitter Current IE=0A f=1MHz Ta=25°C 500 Fig.8 Collector Output Capacitance vs. Collector-Base Voltage Emitter Input Capacitance vs. Emitter-Base Voltage <Tr2> COLLECTOR CURRENT : IC (mA) 10 2 1 25°C −55°C 5 0.5 0.2 0.1 0 0.10mA 20 0.05mA 0.8 1.2 VCE=5V 3V 1V 100 50 20 2 5 10 20 50 100 200 2.0 VCE=5V 25°C 200 −55°C 100 50 20 10 0.2 27µA 8 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) COLLECTOR CURRENT : IC (mA) Fig.4 DC current gain vs. collector current ( Ι ) Fig.5 DC current gain vs. collector current ( ΙΙ ) 24µA 21µA 6 18µA 15µA 12µA 4 9µA 6µA 2 3µA 4 IB=0A 12 8 16 20 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.3 Grounded emitter output characteristics ( Ι ) Ta=100°C 200 1.6 30µA Ta=25°C 0 0 IB=0A 0.4 500 DC CURRENT GAIN : hFE DC CURRENT GAIN : hFE 0.15mA 40 Fig.2 Ta=25°C 0.5 1 0.20mA COLLECTOR TO EMITTER VOLTAGE : VCE (V) Grounded emitter propagation characteristics 10 0.2 60 0 BASE TO EMITTER VOLTAGE : VBE (V) 500 0.25mA 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 Fig.1 80 10 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) 20 0.50mA mA 0.45 A 0.40m 0.35mA 0.30mA Ta=25°C COLLECTOR CURRENT : IC (mA) 100 VCE=6V Ta=100°C COLLECTOR CURRENT : IC (mA) 50 Grounded emitter output characteristics ( ΙΙ ) 0.5 Ta=25°C 0.2 IC/IB=50 20 10 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 COLLECTOR CURRENT : IC (mA) Fig. 6 Collector-emitter saturation voltage vs. collector current Rev.C 3/4 EMZ8 / UMZ8N IC/IB=10 0.2 Ta=100°C 25°C −55°C 0.1 0.05 0.02 0.01 0.2 0.5 1 2 5 10 20 50 100 200 0.5 0.2 0.05 0.02 0.01 0.2 Co b 1 0.5 1 2 5 10 20 50 COLLECTOR TO BASE VOLTAGE : VCB (V) EMITTER TO BASE VOLTAGE : VEB (V) Fig.10 Collector output capacitance vs. collector-base voltage Emitter input capacitance vs. emitter-base voltage BASE COLLECTOR TIME CONSTANT : Cc·rbb' (ps) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) EMITTER INPUT CAPACITANCE : Cib (pF) Ta=25°C f=1MHz IE=0A IC=0A 5 0.2 2 5 10 20 50 100 Ta=25°C VCE=6V 500 200 100 50 −0.5 −1 −2 −5 −10 −20 −50 −100 EMITTER CURRENT : IE (mA) Fig.8 Collector-emitter saturation voltage vs. collector current (ΙΙ) 20 2 0.5 1 COLLECTOR CURRENT : IC (mA) Fig.7 Collector-emitter saturation voltage vs. collector current ( Ι ) Cib Ta=100°C 25°C −55°C 0.1 COLLECTOR CURRENT : IC (mA) 10 IC/IB=50 TRANSITION FREQUENCY : fT (MHz) 0.5 COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Transistors Fig.9 Gain bandwidth product vs. emitter current Ta=25°C f=32MHZ VCB=6V 200 100 50 20 10 −0.2 −0.5 −1 −2 −5 −10 EMITTER CURRENT : IE (mA) Fig.11 Base-collector time constant vs. emitter current Rev.C 4/4 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0