MP6X1 Transistors Medium Power Transistor (32V, 1A) MP6X1 zDimensions (Unit : mm) zApplications Low frequency amplifier MPT6 zFeatures 1) Low VCE(sat), VCE(sat) = 0.15V(Typ.) (IC / IB = 500mA / 50mA) 2) Contain two 2SD1664-dies in a package. (6) (5) (4) (1) (2) (3) zStructure NPN silicon epitaxial planar transistor zPackaging specifications Package zInner circuit Taping (6) Type Code (5) (4) TR Basic ordering unit (pieces) 1000 MP6X1 <Tr2> <Tr1> (1) (2) (1) EMITTER<Tr1> (2) BASE<Tr1> (3) COLLECTOR<Tr2> (4) EMITTER<Tr2> (5) BASE<Tr2> (6) COLLECTOR<Tr1> (3) zAbsolute maximum ratings (Ta=25°C) <Tr1, Tr2> Symbol Limits Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 32 V Emitter-base voltage VEBO 5 V Continuous IC 1 A Pulsed ICP ∗1 2 A ∗2 2.0 W / TOTAL PD 1.4 W / ELEMENT Tj 150 °C Tstg −55 to +150 °C Parameter Collector current Power dissipation Junction temperature Range of storage temperature ∗1 Pw=10ms 1Pulse ∗2 Mounted on a ceramic board Rev.A 1/3 MP6X1 Transistors zElectrical characteristics (Ta=25°C) <Tr1, Tr2> Symbol Min. Typ. Max. Unit Collector-emitter breakdown voltage BVCEO 32 − − V IC=1mA Collector-base breakdown voltage BVCBO 40 − − V IC=50µA Emitter-base breakdown voltage BVEBO 5 − − V IE=50µA ICBO − − 500 nA VCB=20V Parameter Collector cutoff current Conditions − − 500 nA VEB=4V VCE(sat) − − 400 mV IC/IB=500mA/50mA DC current gain hFE 120 − 390 − Transition frequency fT − 150 − MHz − 15 − pF IEBO Emitter cutoff current Collector-emitter saturation voltage ∗ ∗ Cob Collector output capacitance VCE=3V, IC=100mA VCE=5V, IE=−50mA, f=100MHz VCB=10V, IE=0A, f=1MHz ∗ Pulsed zElectrical characteristics curves Ta=100°C 100 50 25°C −55°C 20 10 5 400 4.5mA 3.0mA 3.5mA 4.0mA 2.0mA 1.5mA 300 1.0mA 200 0.5mA 100 2000 Ta=25°C 1000 500 200 VCE=3V 1V 100 2 1 0 0 0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1000 500 200 Ta=100°C 25°C −55°C 100 50 1 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC(mA) Fig.4 DC current gain vs. collector current (ΙΙ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) VCE=3V 0.8 1.2 50 IB=0A 1.6 2.0 1 0.5 Ta=25°C 0.2 0.1 IC/IB=50 0.05 20 10 0.02 0.01 1 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC(mA) Fig.5 Collector-emitter saturation voltage vs. collector current ( Ι ) 2 5 10 20 50 100 200 500 1000 COLLECTOR CURRENT : IC(mA) Fig.2 Grounded emitter output characteristics Fig.1 Grounded emitter propagation characteristics 2000 0.4 COLLECTOR TO EMITTER VOLTAGE : VCE(V) BASE TO EMITTER VOLTAGE : VBE(V) DC CURRENT GAIN : hFE Ta=25°C DC CURRENT GAIN : hFE 200 2.5mA Fig.3 DC current gain vs. collector current ( Ι ) COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) COLLECTOR CURRENT : IC (mA) VCE=6V COLLECTOR CURRENT : IC(mA) 500 500 lC/lB=10 0.5 0.2 0.1 0.05 Ta =100°C 25°C −40°C 0.02 0.01 1 2 5 10 20 50 100 200 5001000 COLLECTOR CURRENT : IC(mA) Fig.6 Collector-emitter saturation voltage vs. collector current (ΙΙ) Rev.A 2/3 MP6X1 200 100 50 20 -1 -2 -5 -10 -20 -50 -100 EMITTER CURRENT : IE(mA) 100 10 Ta=25°C f=1MHz IE=0A Ta=25℃ 50 20 10 5 0.5 1 2 5 10 20 COLLECTOR TO BASE VOLTAGE : VCB(V) Fig.7 Gain bandwidth product vs. emitter current Fig.8 Collector output capacitance vs. collector-base voltage NORMALIZED TRANSIENT THERMAL RESISTANCE : r(t) Ta=25°C VCE=5V COLLECTOR OUTPUT CAPACITANCE : Cob (pF) TRANSITION FREQUENCY : fT (MHz) Transistors 1 0.1 0.01 0.001 0.1 10 1000 PULSE WIDTH : Pw(s) Fig.9 Normalized thermal resistance (Element) COLLECTOR CURRENT : IC (A) 10 10ms 1ms 100ms 1 DC 0.1 Ta=25℃ Single Pulse 0.01 0.1 1 10 100 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Safe operating area (Tr1&Tr2) Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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ROHM cannot be held responsible for any damages arising from the use of the products under conditions out of the range of the specifications or due to non-compliance with the NOTES specified in this catalog. Thank you for your accessing to ROHM product informations. More detail product informations and catalogs are available, please contact your nearest sales office. ROHM Customer Support System www.rohm.com Copyright © 2008 ROHM CO.,LTD. THE AMERICAS / EUROPE / ASIA / JAPAN Contact us : webmaster@ rohm.co. jp 21 Saiin Mizosaki-cho, Ukyo-ku, Kyoto 615-8585, Japan TEL : +81-75-311-2121 FAX : +81-75-315-0172 Appendix1-Rev2.0