SSF6014D
60V N-Channel MOSFET
Main Product Characteristics
VDSS
60V
RDS(on)
12mΩ(typ.)
ID
60A
DPAK
Marking and Pin
Schematic Diagram
Assignment
Features and Benefits
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
60
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
42
IDM
Pulsed Drain Current②
240
Power Dissipation③
115
W
Linear Derating Factor
0.74
W/°C
VDS
Drain-Source Voltage
60
V
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH
235
mJ
IAS
Avalanche Current @ L=0.3mH
39
A
-55 to + 175
°C
PD @TC = 25°C
TJ
TSTG
www.goodark.com
Operating Junction and Storage Temperature Range
Page 1 of 7
A
Rev.2.2
SSF6014D
60V N-Channel MOSFET
Thermal Resistance
Symbol
Characteristics
Typ.
Max.
Units
RθJC
Junction-to-case③
1.31
—
℃/W
RθJA
Junction-to-ambient ④
—
62
℃/W
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol
Parameter
Min.
Typ.
Max.
Units
V(BR)DSS
Drain-to-Source breakdown voltage
60
—
—
V
RDS(on)
Static Drain-to-Source on-resistance
—
12
14
mΩ
VGS(th)
Gate threshold voltage
2.0
—
4.0
—
2.0
—
IDSS
Drain-to-Source leakage current
—
—
2
—
—
10
IGSS
Gate-to-Source forward leakage
—
—
100
—
—
-100
Qg
Total gate charge
—
45
—
Qgs
Gate-to-Source charge
—
4
—
Qgd
Gate-to-Drain("Miller") charge
—
15
—
td(on)
Turn-on delay time
—
14.6
—
tr
Rise time
—
14.2
—
td(off)
Turn-Off delay time
—
40
—
tf
Fall time
—
7.3
—
Ciss
Input capacitance
—
1480
—
Coss
Output capacitance
—
190
—
Crss
Reverse transfer capacitance
—
135
—
V
μA
nA
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 30A
VDS = VGS, ID = 250μA
TJ = 125℃
VDS = 60V,VGS = 0V
TJ = 150°C
VGS =20V
VGS = -20V
ID = 30A,
nC
VDS=30V,
VGS = 10V
VGS=10V, VDS=30V,
ns
RL=15Ω,
RGEN=2.5Ω
VGS = 0V
pF
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
60
A
—
—
240
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.3
V
IS=30A, VGS=0V
trr
Reverse Recovery Time
—
33
—
ns
TJ = 25°C, IF =60A,
Qrr
Reverse Recovery Charge
—
61
—
nC
di/dt = 100A/μs
www.goodark.com
Page 2 of 7
Rev.2.2
SSF6014D
60V N-Channel MOSFET
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C.
⑥ The maximum current rating is limited by bond-wires.
www.goodark.com
Page 3 of 7
Rev.2.2
SSF6014D
60V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 1,Transfer Characteristic
Figure 2,Capacitance
Figure 3,On Resistance vs. Junction
Figure 4,Breakdown Voltage vs. Junction
Temperature
Temperature
www.goodark.com
Page 4 of 7
Rev.2.2
SSF6014D
60V N-Channel MOSFET
Figure 5,Gate Charge
Figure 7. Safe Operation Area
Figure 6,Source-Drain Diode Forward Voltage
Figure 8. Max Drain Current vs. Junction
Temperature
Figure 9. Transient Thermal Impedance Curve
www.goodark.com
Page 5 of 7
Rev.2.2
SSF6014D
60V N-Channel MOSFET
Mechanical Data
DPAK PACKAGE OUTLINE DIMENSION
Symbol
A
A1
B
B1
C
D
D1
D2
E
E1
e
H
F
K
V2
www.goodark.com
Dimension In Millimeters
Nom
Max
2.300
2.380
1.010
1.110
0.760
0.810
5.330
5.460
0.510
0.560
6.100
6.200
5.350 (REF)
2.900 (REF)
6.500
6.600
6.700
4.83 (REF)
2.186
2.286
2.386
9.800
10.100
10.400
1.400
1.500
1.700
1.600 (REF)
Min
2.200
0.910
0.710
5.130
0.460
6.000
Min
0.087
0.036
0.028
0.202
0.018
0.236
0.256
0.086
0.386
0.055
80 (REF)
Dimension In Inches
Nom
0.091
0.040
0.030
0.210
0.020
0.240
0.211 (REF)
0.114 (REF)
0.260
0.190 (REF)
0.090
0.398
0.059
0.063 (REF)
Max
0.094
0.044
0.032
0.215
0.022
0.244
0.264
0.094
0.409
0.067
80 (REF)
Page 6 of 7
Rev.2.2
SSF6014D
60V N-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF6014D
Package (Available)
DPAK
Operating Temperature Range
C : -55 to 175 ºC
Devices per Unit
Option1：
Package Units/ Tubes/Inner
Type
Tube Box
TO-252
80
50
Units/Inner
Box
4000
Inner
Boxes/Carton
Box
10
Units/Carton
Box
Inner
Boxes/Carton
Box
7
Units/Carton
Box
Inner
Boxes/Carton
Box
10
Units/Carton
Box
40000
Option2：
Package Units/ Tapes/Inner
Tape Box
Type
TO-252
2500
2
Units/Inner
Box
5000
35000
Option3：
Package Units/ Tapes/Inner
Type
Tape Box
TO-252
2500
1
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
www.goodark.com
Units/Inner
Box
2500
Duration
Sample Size
Tj=125℃ to 175℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 175℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
Page 7 of 7
25000
Rev.2.2