SSF3611E
30V P-Channel MOSFET
Main Product Characteristics
VDSS
-30 V
RDS(on)
10.6 mΩ(typ.)
ID
-12A
SOP-8
Schematic Diagram
Assignment
Features and Benefits
Marking and Pin
Advanced trench MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
-12
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
-7.4
IDM
Pulsed Drain Current②
-48
PD @TC = 25°C
Power Dissipation③
2
W
VDS
Drain-Source Voltage
-30
V
VGS
Gate-to-Source Voltage
± 20
V
-55 to +150
°C
TJ
TSTG
Operating Junction and Storage Temperature Range
A
Thermal Resistance
Symbol
Characteristics
RθJA
Junction-to-ambient (t ≤ 10s) ④
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Page 1 of 5
Typ.
Max.
Units
—
62.5
℃/W
Rev.1.0
SSF3611E
30V P-Channel MOSFET
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
unless otherwise specified
Min.
Typ.
Max.
Units
-30
—
—
V
—
10.6
13
—
14.1
16
Gate threshold voltage
1
—
2
V
VDS = VGS, ID = 250μA
IDSS
Drain-to-Source leakage current
—
—
-1
μA
VDS = -30V,VGS = 0V
IGSS
Gate-to-Source forward leakage
—
—
10
—
—
-10
Qg
Total gate charge
—
55
—
Qgs
Gate-to-Source charge
—
3.5
—
Qgd
Gate-to-Drain("Miller") charge
—
18
—
td(on)
Turn-on delay time
—
8.0
—
tr
Rise time
—
5.8
—
td(off)
Turn-Off delay time
—
56
—
tf
Fall time
—
38
—
Ciss
Input capacitance
—
3224
—
Coss
Output capacitance
—
459
—
Crss
Reverse transfer capacitance
—
425
—
mΩ
μA
Conditions
VGS = 0V, ID = 250μA
VGS =-10.0V, ID =-10.0A
VGS =-4.50V, ID =-7.50A
VGS = 20V
VGS = -20V
ID = -10A,
nC
VDS=-25V,
VGS = -10V
VGS=-10V, VDS=-15V,
ns
RL=15Ω,
RGEN=3Ω
VGS = 0V
pF
VDS = -15V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
-12
A
—
—
-48
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
-0.73
-1.2
V
IS=-2.1A, VGS=0V
trr
Reverse Recovery Time
—
16
—
ns
TJ = 25°C, IF =-10A, di/dt =
Qrr
Reverse Recovery Charge
—
5.9
—
uC
100A/μs
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Page 2 of 5
Rev.1.0
SSF3611E
30V P-Channel MOSFET
Test Circuits and Waveforms
Switch time test circuit:
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-ambient thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
⑤These curves are based on the junction-to-case thermal impedence which is measured with the
device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C.
⑥ The maximum current rating is limited by bond-wires.
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Page 3 of 5
Rev.1.0
SSF3611E
30V P-Channel MOSFET
Mechanical Data
SOP8 PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A2
b
c
D
E
E1
e
L
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Dimension In Millimeters
Min
Max
1.350
1.750
0.100
0.250
1.280
1.480
0.406
0.173
0.233
4.800
5.000
3.800
4.000
5.800
6.200
1.27TYP
0.400
1.250
Page 4 of 5
Dimension In Inches
Min
Max
0.053
0.069
0.004
0.010
0.050
0.058
0.016
0.007
0.009
0.189
0.197
0.150
0.157
0.228
0.244
0.050TYP
0.016
0.050
Rev.1.0
SSF3611E
30V P-Channel MOSFET
Ordering and Marking Information
Device Marking: SSF3611E
Package (Available)
SOP-8
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
SOP-8
Units/
Tape
Tapes/Inner
Box
2500
2
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
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Units/Inner Inner
Box
Boxes/Carton
Box
5000
8
Duration
Sample Size
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ or 150℃ @
100% of Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
Page 5 of 5
Units/Carton
Box
40000
Rev.1.0