SSF5508A
55V N-Channel MOSFET
Main Product Characteristics
VDSS
55V
RDS(on)
4.5mohm（Typ）
ID
110A
Features and Benefits
SSF5508A Top View (TO-263)
Advanced trench MOSFET process technology
Special designed for convertors and power controls
Ultra low on-resistance
175℃ operating temperature
High Avalanche capability and 100% tested
Lead free product
Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications
Absolute Max Rating:
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
110
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
80
IDM
Pulsed Drain Current②
440
ISM
Pulsed Source Current.(Body Diode)
440
Power Dissipation③
205
W
Linear derating factor
2
W/ Cْ
VDS
Drain-Source Voltage
55
V
VGS
Gate-to-Source Voltage
± 20
V
dv/dt
Peak diode recovery voltage
35
v/ns
EAS
Single Pulse Avalanche Energy @ L=0.3mH②
634
mJ
IAR
Avalanche Current @ L=0.3mH②
65
A
-55 to + 175
°C
PD @TC = 25°C
Operating Junction and Storage Temperature
TJ TSTG
Range
Units
A
Thermal Resistance
Symbol
Characterizes
Value
Unit
RθJC
Junction-to-case③
0.73
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
50
℃/W
www.goodark.com
Page 1 of 6
Rev.3.6
SSF5508A
55V N-Channel MOSFET
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol
BVDSS
RDS(on)
VGS(th)
IDSS
Parameter
Min.
Typ.
Max.
Units
55
60
—
V
—
4.5
6
mΩ
2
3.1
4
V
—
—
1
Drain-to-Source breakdown
voltage
Static Drain-to-Source
on-resistance
Gate threshold voltage
Drain-to-Source leakage
—
—
VGS = 0V,
ID = 250μA
VGS = 10V,
ID = 20A
VDS = VGS,
ID = 250μA
VDS = 55V,
VGS = 0V
μA
current
Conditions
10
VDS = 55V,
VGS = 0V,
TJ = 150°C
Gate-to-Source forward
IGSS
—
leakage
Gate-to-Source reverse
leakage
—
100
VGS =20V
nA
-100
—
—
VGS = -20V
Qg
Total gate charge
—
125
147
Qgs
Gate-to-Source charge
—
24
30
Qgd
Gate-to-Drain("Miller") charge
—
49
61
Qg(th)
Gate charge at shreshold
—
16
20
Vplateau
gate plateau voltage
—
4.7
6
td(on)
Turn-on delay time
—
20
—
tr
Rise time
—
19
—
td(off)
Turn-Off delay time
—
70
—
tf
Fall time
—
30
—
VGS=10V
Ciss
Input capacitance
—
5607
—
VGS = 0V,
Coss
Output capacitance
—
463
—
Crss
Reverse transfer capacitance
—
454
—
nC
ID=30A
VDD=30V
VGS=10V
V
VDD=30V
ns
pF
ID=2A ,RL=15Ω
RG=2.5Ω
VDS = 25V,
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
Symbol
IS
Parameter
Maximum Body-Diode
Continuous Curren
Min.
Typ.
Max.
Units
—
110
—
A
Conditions
VSD
Diode Forward Voltage
—
0.77
1
V
IS=40A, VGS=0V
Trr
Reverse Recovery Time
—
36
—
ns
TJ = 25°C, IF =68A, ,
Qrr
Reverse Recovery Charge
—
57
—
nC
di/dt = 100A/μs
ton
Forward Turn-on Time
www.goodark.com
Intrinsic turn-on time is negligible
(turn-on is dominated by LS+LD)
Page 2 of 6
Rev.3.6
SSF5508A
55V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
10V
90
6V
5V
7V
ID,drain current(A)
80
4.5V
70
60
50
4V
40
30
100
ID,drain to source current(A)
100
3.5V
20
10
80
70
60
50
40
30
0.5
1
1.5
2
2.5
3
3.5
VDS,drain to source voltage(V)
4
4.5
0
0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 6
VGS,gate to source voltage(V)
Figure 1: Typical Output Characteristics
Figure 2: Typical Transfer Characteristics
Rdson,Drain-to-Source On Resistance(Normalized)
Rd son, Drai n-to -Sou rce On
R esis tanc e(No rmal ize d)
VGS=7V
4
VGS=10V
3
0
5
10
15
25℃
10
5
6
5
125℃
20
0
0
VDS=VGS
90
20
25
30
1.7
1.6
1.5
1.4
VGS=10V
1.3
ID=20A
1.2
1.1
VGS=7V
1
ID=20A
0.9
0.8
0
25
50
75
1 00
125
1 50
175
20 0
Tj, Jun cti on Tem per atu re( °C)
ID,drain current(A)
Figure 3: On-Resistance vs. Drain Current and
Figure 4: On-Resistance vs. Junction Temperature
Gate Voltage
25
1.E+02
IS,source to drain current(A)
Rdson,Drain-to-Source On
Resistance(Normalized)
ID=20A
20
15
125℃
10
5
25℃
1.E+01
125℃
1.E+00
1.E-01
1.E-02
25℃
1.E-03
1.E-04
1.E-05
0
0
2
3
4
5
6
7
8
9
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
VSD,source to drain voltage(V)
VGS,gate to source voltage(V)
Figure 5: On-Resistance vs. Gate-Source Voltage
www.goodark.com
1 1.1 1.2
10
Figure 6: Body-Diode Characteristics
Page 3 of 6
Rev.3.6
SSF5508A
55V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 7: Gate-Charge Characteristics Figure
Figure 8: Capacitance Characteristics
1000
ID,drain current(A)
10uS
Ron
limited
100
100uS
DC
10
1mS
10mS
Tj(max)=150℃
1
Tc=25℃
0.1
0.01
0.1
1
10
100
VDS,drain to source voltage(V)
Figure 9: Maximum Forward Biased Safe
Figure 10: Single Pulse Power Rating
Operating Area(⑤)
Figure 11: Power De-rating (③)
www.goodark.com
Junction-to-Case (⑤)
Figure 12: Current De-rating (③)
Page 4 of 6
Rev.3.6
SSF5508A
55V N-Channel MOSFET
Typical Electrical and Thermal Characteristics
Figure 13: Transient Thermal Impedance Curve
Switch Waveforms
Notes:①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature. EAS starting,ID=65A.
③The power dissipation PD is based on max. junction temperature, using junction-to-case
thermal resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz.
Copper, in a still air environment with TA =25°C.
www.goodark.com
Page 5 of 6
Rev.3.6
SSF5508A
55V N-Channel MOSFET
TO-263 MECHANICAL DATA
www.goodark.com
Page 6 of 6
Rev.3.6