SSF1007 Main Product Characteristics:
VDSS
100V
RDS(on)
5.8mohm（Typ）
ID
130A
Features and Benefits:
SSF1007 TOP View (TO220)
Advanced trench MOSFET process technology
Special designed for convertors and power controls
Ultra low on-resistance
175℃ operating temperature
High Avalanche capability and 100% tested
Description:
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an
extremely efficient and reliable device for use in power switching application and a wide variety of other
applications.
Absolute max Rating:
Symbol
Parameter
Max.
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
130
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
91
IDM
Pulsed Drain Current②
520
Power Dissipation③
258
W
Linear derating factor
1.7
W/ Cْ
VGS
Gate-to-Source Voltage
± 20
V
EAS
Single Pulse Avalanche Energy @ L=0.3mH②
735
mJ
IAR
Avalanche Current @ L=0.3mH②
75
A
TJ TSTG
Operating Junction and Storage Temperature Range
-55 to + 175
°C
PD @TC = 25°C
Units
A
Thermal Resistance
Symbol
Characterizes
Value
Unit
RθJC
Junction-to-case③
0.58
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
62
℃/W
©Silikron Semiconductor CO.,LTD.
2011.04.02
www.silikron.com Version : 1.0
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SSF1007 Electrical Characterizes @TA=25℃ unless otherwise specified
Symbol
BVDSS
RDS(on)
VGS(th)
IDSS
Parameter
Drain-to-Source breakdown
voltage
Static Drain-to-Source
on-resistance
Gate threshold voltage
Min.
Typ.
Max
Units
100
—
—
V
—
5.8
7
mΩ
2
—
4
V
—
—
20
Drain-to-Source leakage current
—
VGS = 0V,
ID = 250μA
VGS = 10V,
ID = 75A③
VDS = VGS,
ID = 250μA
VDS = 100V,
VGS = 0V
μA
—
Conditions
VDS = 80V,
VGS = 0V,
250
TJ = 125°C
Gate-to-Source forward leakage
IGSS
—
—
100
VGS = 20V
nA
Gate-to-Source reverse leakage
—
—
-100
VGS = -20V
Qg
Total gate charge
—
243
—
Qgs
Gate-to-Source charge
—
47
—
Qgd
Gate-to-Drain("Miller") charge
—
92
—
VGS = 10V③
td(on)
Turn-on delay time
—
28
—
VDD = 65V
tr
Rise time
—
108
—
td(off)
Turn-Off delay time
—
123
—
tf
Fall time
—
120
—
VGS = 10V③
Ciss
Input capacitance
—
8456
—
VGS = 0V
Coss
Output capacitance
—
454
—
Crss
Reverse transfer capacitance
—
417
—
ID = 75A
nC
ns
pF
VDS = 50V
ID = 75A
RG = 2.7 Ω
VDS = 50V
ƒ = 500KHz
Source-Drain Ratings and Characteristics
Parameter
Min.
Typ.
Max
Units
Conditions
MOSFET symbol
IS
ISM
VSD
Trr
Qrr
ton
Continuous Source
Current (Body Diode)
Pulsed Source Current
(Body Diode) ①
Diode Forward Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Forward Turn-on Time
—
showing the
130
A
—
—
520
—
—
1.3
V
—
57
70
ns
—
156
170
nC
integral reverse
p-n junction diode.
TJ = 25°C, IS = 75A, VGS = 0V③
TJ = 25°C, IF = 75A, VDD = 20V
di/dt = 100A/μs③
TJ = 25°C, IF = 75A,Vgs=0V
di/dt = 100A/μs③
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
©Silikron Semiconductor CO.,LTD.
—
2011.04.02
www.silikron.com Version : 1.0
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SSF1007 Typical electrical and thermal characteristics
Figure
1. Typical Output Characteristics
Figure 2. Typical Transfer Characteristics
Figure 3.Typical Capacitance Vs. Drain-to-Source Figure 4. Normalized On-Resistance Vs. Case
Voltage
Temperature
Figure 5. Drain-to-Source Breakdown Voltage vs.
Figure 6. Maximum Drain Current Vs. Case
Temperature
Temperature
©Silikron Semiconductor CO.,LTD.
2011.04.02
www.silikron.com Version : 1.0
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SSF1007 Typical electrical and thermal characteristics
Figure 7.
Maximum Effective Transient Thermal Impedance, Junction-to-Case
Switch Waveforms Notes:
①Repetitive rating; pulse width limited by max. junction temperature.
②Limited by TJmax, starting TJ = 25°C, L = 0.3mH RG =50Ω, IAS = 70A, VGS =10V. Part
not recommended for use above this value.
③Pulse width < 1.0ms; duty cycle<2%.
④This is only applied to TO-220 package
©Silikron Semiconductor CO.,LTD.
2011.04.02
www.silikron.com Version : 1.0
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SSF1007 Mechanical Data：
TO220
©Silikron Semiconductor CO.,LTD.
2011.04.02
www.silikron.com Version : 1.0
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