SSF3056C 30V Complementary MOSFET (Preliminary) Main Product Characteristics NMOS PMOS D1 S1 NMOS VDSS 30V -30V D1 G1 D2 S2 PMOS RDS(on) 37mohm(typ.) 68mohm(typ.) ID 5A D2 G2 -4.5A Schematic Diagram DFN2X3-8L Features and Benefits Advanced trench MOSFET process technology Special designed for buck-boost circuit, DSC, portable devices and general purpose applications Ultra low on-resistance with low gate charge 150℃ operating temperature Lead free product Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in buck-boost circuit, DSC, portable devices and a wide variety of others applications. Absolute Max Rating Symbol Max. Parameter N-channel P-channel Units ID @ TC = 25°C Continuous Drain Current, VGS @ 4.5V① 5 -4.5 ID @ TC = 100°C Continuous Drain Current, VGS @ 4.5V① 4.2 -3.4 IDM Pulsed Drain Current② 18.8 -12.5 PD @TC = 25°C Power Dissipation③ 2.1 1.8 W VDS Drain-Source Voltage 30 -30 V VGS Gate-to-Source Voltage ± 12 ± 12 V -55 to + 150 -55 to + 150 °C TJ TSTG www.goodark.com Operating Junction and Storage Temperature Range Page 1 of 5 A Rev.1.0 SSF3056C 30V Complementary MOSFET (Preliminary) Thermal Resistance Symbol RθJA Characteristics V(BR)DSS 60 95 ℃/W Junction-to-Ambient (PCB mounted, steady-state) ④ — 40 40 ℃/W Parameter IDSS IGSS unless otherwise specified Min. Typ. 30 — — 27.5 — — -30 — — -27.5 — — TJ = 125°C N-channel — 37 55 VGS=4.5V,ID = 4.8A P-channel — 68 85 N-channel — 50 90 VGS=3.5V,ID = 3.8A P-channel — 84 115 VGS=-3.5V,ID = -1.8A N-channel 0.7 1.48 2 VDS = VGS, ID = 250μA Gate threshold P-channel 0.7 1.12 2 voltage N-channel -0.7 -1.49 -2 P-channel -0.7 -1.26 -2 Drain-to-Source N-channel — — 1 leakage current P-channel — — -1 N-channel — — 100 Gate-to-Source N-channel — — -100 forward leakage P-channel — — 100 P-channel — — -100 Drain-to-Source breakdown voltage Drain-to-Source on-resistance VGS(th) P-channel — Static RDS(on) Units N-channel Junction-to-ambient (t ≤ 10s) ④ Electrical Characteristics @TA=25℃ Symbol Max. Typ. N-channel P-channel Max. Units Conditions VGS = 0V, ID = 250μA V mΩ V TJ = 125°C VGS = 0V, ID = -250μA VGS=-4.5V,ID = -2.3A TJ = 125°C VDS = VGS, ID = -250μA TJ = 125°C μA VDS = 30V,VGS = 0V VDS = -30V,VGS = 0V VGS =12V nA VGS = -12V VGS =12V VGS = -12V Source-Drain Ratings and Characteristics Symbol IS ISM VSD Parameter Min. Typ. Max. Continuous Source Current — — 5 (Body Diode) — -4.5 Pulsed Source Current — — 18.8 (Body Diode) — — -12.5 — 0.82 1.2 — -0.84 -1.2 www.goodark.com Page 2 of 5 Conditions MOSFET symbol A — Diode Forward Voltage Units showing the integral reverse A V p-n junction diode. IS=2.4A, VGS=0V IS=-1.5A, VGS=0V Rev.1.0 SSF3056C 30V Complementary MOSFET (Preliminary) Test Circuits and Waveforms Switch Waveforms: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to- ambient thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C www.goodark.com Page 3 of 5 Rev.1.0 SSF3056C 30V Complementary MOSFET (Preliminary) Mechanical Data DFN2X3-8L Bottom View Bottom View Top View COMMON DIMENSIONS(MM) PKG. W:VERY VERY THIN REF. MIN. NOM. MAX. A 0.70 0.75 0.80 A1 0.00 — 0.05 A3 Side View 0.2 REF. D 2.95 3.00 3.05 E 1.95 2.00 2.05 b 0.25 0.30 0.35 L 0.25 0.35 0.45 D2 0.77 0.92 1.02 E2 0.38 0.53 0.63 e 0.65 BCS. NOTES： 1. All dimensions are in millimeters. 2. Tolerance ±0.10mm (4 mil) unless otherwise specified 3. Package body sizes exclude mold flash and gate burrs. Mold flash at the non-lead sides should be less than 5 mils. 4. Dimension L is measured in gauge plane. 5. Controlling dimension is millimeter, converted inch dimensions are not necessarily exact. www.goodark.com Page 4 of 5 Rev.1.0 SSF3056C 30V Complementary MOSFET (Preliminary) Ordering and Marking Information Device Marking: 3056C Package (Available) DFN2X3-8L Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/ Tube Tubes/ Inner Box Units/ Inner Box Inner Boxes/ Carton Box Units/ Carton Box DFN2*3-8L 3000pcs 10pcs 30000pcs 4pcs 120000pcs www.goodark.com Page 5 of 5 Rev.1.0