SSF3036C 30V Complementary MOSFET Main Product Characteristics NMOS PMOS VDSS 30V -30V RDS(on) 32.4mohm 61.6mohm ID 4A -3.6A N-Channel Mosfet P-Channel Mosfet Schematic Diagram DFN 3x2-8L Bottom View Features and Benefits Advanced Process Technology Special designed for PWM, load switching and general purpose applications Ultra low on-resistance with low gate charge Fast switching and reverse body recovery 150℃ operating temperature Lead free product Description It utilizes the latest trench processing techniques to achieve the high cell density and reduces the on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable device for use in power switching application and a wide variety of other applications. Absolute Max Rating Symbol Max. Parameter N-Channel P-Channel 4① -3.6 ① Units ID @ TC = 25°C Continuous Drain Current, VGS @ 10V (Silicon Limited) IDM Pulsed Drain Current ② 16 -14.4 VGS Gate to source voltage ±12 ±12 V PD @TC = 25°C Power Dissipation ③ 2.1 1.3 W TJ Operating Junction and Storage Temperature Range -55 to + 150 -55 to + 150 °C TSTG A Thermal Resistance Symbol Characteristics RθJA Junction-to-ambient (t ≤ 5s) ④ www.goodark.com Typ. — Page 1 of 5 Max. N-channel P-Channel 60 95 Units ℃/W Rev.1.0 SSF3036C 30V Complementary MOSFET Electrical Characteristics @TA=25℃ unless otherwise specified Symbol Parameter V(BR)DSS Drain-to-Source breakdown voltage RDS(on) Static Drain-to-Source on-resistance VGS(th) Gate threshold voltage IDSS Drain-to-Source leakage current IGSS Gate-to-Source forward leakage Min. Typ. Max. N-channel 30 — — P-Channel -30 — — N-channel — 32.4 36 P-Channel — 61.6 65 N-channel 0.5 — 2 P-Channel -0.5 — -2 N-channel — — 1 P-Channel — — -1 N-channel — — 100 N-channel -100 — — P-Channel — — 100 P-Channel -100 — — Units Conditions VGS = 0V, ID = 250μA V VGS = 0V, ID = -250μA mΩ VGS= 4.5V,ID = 4.8A VGS= -4.5V,ID = -2.3A VDS = VGS, ID = 250μA V VDS = VGS, ID = -250μA μA VDS =30V,VGS = 0V VDS =-30V,VGS = 0V VGS =12V nA VGS = -12V VGS =12V VGS =-12V Source-Drain Ratings and Characteristics Symbol IS ISM VSD Parameter Min. Typ. Max. N-channel — — 4 P-Channel — — -3.6 N-channel — — 16 Continuous Source Current Conditions MOSFET symbol A Pulsed Source Current showing the integral reverse p-n junction diode. A P-Channel — — -14.4 N-channel — 0.82 1.2 Diode Forward Voltage IS=2.4A, VGS=0V V P-Channel www.goodark.com Units — Page 2 of 5 -0.85 -1.2 IS=-1.5A, VGS=0V Rev.1.0 SSF3036C 30V Complementary MOSFET Test Circuits and Waveforms Switching time waveform: Notes: ①The maximum current rating is limited by bond-wires. ②Repetitive rating; pulse width limited by max. junction temperature. ③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal resistance. ④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C Thermal Characteristics Figure1. Normalized Thermal Transient Impedance, Junction-to-Ambient www.goodark.com Page 3 of 5 Rev.1.0 SSF3036C 30V Complementary MOSFET Mechanical Data DFN 3X2_8L PACKAGE OUTLINE DIMENSION Symbol A A1 A3 D E b L e www.goodark.com Dimension In Millimeters Nom Max 0.750 0.800 0.050 0.200REF 2.950 3.000 3.050 1.950 2.000 2.050 0.250 0.300 0.350 0.280 0.350 0.420 0.650BSC Min 0.700 0.000 Page 4 of 5 Min 0.028 0.000 0.116 0.077 0.010 0.016 Dimension In Inches Nom 0.030 0.008REF 0.118 0.079 0.012 0.014 0.026BSC Max 0.031 0.002 0.120 0.081 0.014 0.017 Rev.1.0 SSF3036C 30V Complementary MOSFET Ordering and Marking Information Device Marking: 3036C Package (Available) DFN 3x2-8L Operating Temperature Range C : -55 to 150 ºC Devices per Unit Package Type Units/T Tubes/Inner ube Box DFN 3x2-8L 3000pcs 10pcs Reliability Test Program Test Item Conditions High Temperature Reverse Bias(HTRB) High Temperature Gate Bias(HTGB) www.goodark.com Units/Inner Box 30000pcs Inner Boxes/Carton Box 4pcs Duration Sample Size Tj=125℃ to 150℃ @ 80% of Max VDSS/VCES/VR 168 hours 500 hours 1000 hours 3 lots x 77 devices Tj=150℃ @ 100% of Max VGSS 168 hours 500 hours 1000 hours 3 lots x 77 devices Page 5 of 5 Units/Carton Box 120000pcs Rev.1.0