SSF3036C

SSF3036C
30V Complementary MOSFET
Main Product Characteristics
NMOS
PMOS
VDSS
30V
-30V
RDS(on)
32.4mohm
61.6mohm
ID
4A
-3.6A
N-Channel Mosfet
P-Channel Mosfet
Schematic Diagram
DFN 3x2-8L
Bottom View
Features and Benefits


Advanced Process Technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product




Description
It utilizes the latest trench processing techniques to achieve the high cell density and reduces the
on-resistance with high repetitive avalanche rating. These features combine to make this design an extremely
efficient and reliable device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Max.
Parameter
N-Channel
P-Channel
4①
-3.6 ①
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V (Silicon Limited)
IDM
Pulsed Drain Current ②
16
-14.4
VGS
Gate to source voltage
±12
±12
V
PD @TC = 25°C
Power Dissipation ③
2.1
1.3
W
TJ
Operating Junction and Storage Temperature Range
-55 to + 150
-55 to + 150
°C
TSTG
A
Thermal Resistance
Symbol
Characteristics
RθJA
Junction-to-ambient (t ≤ 5s) ④
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Typ.
—
Page 1 of 5
Max.
N-channel
P-Channel
60
95
Units
℃/W
Rev.1.0
SSF3036C
30V Complementary MOSFET
Electrical Characteristics @TA=25℃ unless otherwise specified
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Min.
Typ.
Max.
N-channel
30
—
—
P-Channel
-30
—
—
N-channel
—
32.4
36
P-Channel
—
61.6
65
N-channel
0.5
—
2
P-Channel
-0.5
—
-2
N-channel
—
—
1
P-Channel
—
—
-1
N-channel
—
—
100
N-channel
-100
—
—
P-Channel
—
—
100
P-Channel
-100
—
—
Units
Conditions
VGS = 0V, ID = 250μA
V
VGS = 0V, ID = -250μA
mΩ
VGS= 4.5V,ID = 4.8A
VGS= -4.5V,ID = -2.3A
VDS = VGS, ID = 250μA
V
VDS = VGS, ID = -250μA
μA
VDS =30V,VGS = 0V
VDS =-30V,VGS = 0V
VGS =12V
nA
VGS = -12V
VGS =12V
VGS =-12V
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
VSD
Parameter
Min.
Typ.
Max.
N-channel
—
—
4
P-Channel
—
—
-3.6
N-channel
—
—
16
Continuous Source Current
Conditions
MOSFET symbol
A
Pulsed Source Current
showing the
integral reverse
p-n junction diode.
A
P-Channel
—
—
-14.4
N-channel
—
0.82
1.2
Diode Forward Voltage
IS=2.4A, VGS=0V
V
P-Channel
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Units
—
Page 2 of 5
-0.85
-1.2
IS=-1.5A, VGS=0V
Rev.1.0
SSF3036C
30V Complementary MOSFET
Test Circuits and Waveforms
Switching time waveform:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
Thermal Characteristics
Figure1. Normalized Thermal Transient Impedance, Junction-to-Ambient
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Page 3 of 5
Rev.1.0
SSF3036C
30V Complementary MOSFET
Mechanical Data
DFN 3X2_8L PACKAGE OUTLINE DIMENSION
Symbol
A
A1
A3
D
E
b
L
e
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Dimension In Millimeters
Nom
Max
0.750
0.800
0.050
0.200REF
2.950
3.000
3.050
1.950
2.000
2.050
0.250
0.300
0.350
0.280
0.350
0.420
0.650BSC
Min
0.700
0.000
Page 4 of 5
Min
0.028
0.000
0.116
0.077
0.010
0.016
Dimension In Inches
Nom
0.030
0.008REF
0.118
0.079
0.012
0.014
0.026BSC
Max
0.031
0.002
0.120
0.081
0.014
0.017
Rev.1.0
SSF3036C
30V Complementary MOSFET
Ordering and Marking Information
Device Marking: 3036C
Package (Available)
DFN 3x2-8L
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package
Type
Units/T Tubes/Inner
ube
Box
DFN 3x2-8L
3000pcs
10pcs
Reliability Test Program
Test Item
Conditions
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
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Units/Inner
Box
30000pcs
Inner
Boxes/Carton
Box
4pcs
Duration
Sample Size
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
Page 5 of 5
Units/Carton
Box
120000pcs
Rev.1.0