SSF2N60D2
600V N-Channel MOSFET
Preliminary
Main Product Characteristics
VDSS
600V
RDS(on)
3.7Ω (typ.)
ID
2A
TO-252
Marking and Pin
Schematic Diagram
Assignment
Features and Benefits
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
150℃ operating temperature
Lead free product
Description
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute Max Rating
Symbol
Parameter
Max.
Units
ID @ TC = 25°C
Continuous Drain Current, VGS @ 10V①
2
ID @ TC = 100°C
Continuous Drain Current, VGS @ 10V①
1.3
IDM
Pulsed Drain Current②
8
Power Dissipation③
34
W
Linear Derating Factor
0.27
W/°C
VDS
Drain-Source Voltage
600
V
VGS
Gate-to-Source Voltage
± 30
V
EAS
Single Pulse Avalanche Energy @ L=30mH
115
mJ
IAS
Avalanche Current @ L=30mH
2.52
A
-55 to +150
°C
PD @TC = 25°C
TJ
TSTG
www.goodark.com
Operating Junction and Storage Temperature Range
Page 1 of 7
A
Rev.1.0
SSF2N60D2
600V N-Channel MOSFET
Preliminary
Thermal Resistance
Symbol
Characteristics
Typ.
Max.
Units
RθJC
Junction-to-case③
—
3.7
℃/W
RθJA
Junction-to-ambient (t ≤ 10s) ④
—
110
℃/W
Electrical Characteristics @TA=25℃
Symbol
Parameter
V(BR)DSS
Drain-to-Source breakdown voltage
RDS(on)
Static Drain-to-Source on-resistance
unless otherwise specified
Min.
Typ.
Max.
Units
V
600
—
—
—
3.7
4.2
—
8.2
—
2
—
4
—
2.2
—
—
—
1
—
—
50
—
—
100
—
—
-100
VGS(th)
Gate threshold voltage
IDSS
Drain-to-Source leakage current
IGSS
Gate-to-Source forward leakage
Qg
Total gate charge
—
5.67
—
Qgs
Gate-to-Source charge
—
1.74
—
Qgd
Gate-to-Drain("Miller") charge
—
1.99
—
td(on)
Turn-on delay time
—
9.2
—
tr
Rise time
—
23.4
—
td(off)
Turn-Off delay time
—
15.3
—
tf
Fall time
—
20.1
—
Ciss
Input capacitance
—
250.1
—
Coss
Output capacitance
—
35.7
—
Crss
Reverse transfer capacitance
—
1.1
—
Ω
Conditions
VGS = 0V, ID = 250μA
VGS=10V,ID = 1.0A
TJ = 125℃
V
VDS = VGS, ID = 250μA
TJ = 125℃
μA
VDS = 600V,VGS = 0V
TJ = 125℃
nA
VGS =30V
VGS = -30V
ID = 2.0A,
nC
VDS=480V,
VGS = 10V
ns
VGS=10V, VDS=300V,
RGEN=25Ω, ID=2.0A
VGS = 0V
pF
VDS = 25V
ƒ = 1MHz
Source-Drain Ratings and Characteristics
Symbol
IS
ISM
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Min.
Typ.
Max.
Units
—
—
2
A
—
—
8
A
Conditions
MOSFET symbol
showing the
integral reverse
p-n junction diode.
VSD
Diode Forward Voltage
—
—
1.4
V
IS=2.0A, VGS=0V
trr
Reverse Recovery Time
—
356.8
—
ns
TJ = 25°C, IF =2A,
Qrr
Reverse Recovery Charge
—
1030
—
nC
di/dt = 100A/μs
www.goodark.com
Page 2 of 7
Rev.1.0
SSF2N60D2
600V N-Channel MOSFET
Preliminary
Test Circuits and Waveforms
Switch Waveforms:
Notes:
①The maximum current rating is limited by bond-wires.
②Repetitive rating; pulse width limited by max. junction temperature.
③The power dissipation PD is based on max. junction temperature, using junction-to-case thermal
resistance.
④The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a
still air environment with TA =25°C
www.goodark.com
Page 3 of 7
Rev.1.0
SSF2N60D2
600V N-Channel MOSFET
Preliminary
Typical Electrical and Thermal Characteristics
Figure 2. Gate to source cut-off voltage
Figure 1: Typical Output Characteristics
Figure 3. Drain-to-Source Breakdown Voltage Vs.
Case Temperature
www.goodark.com
Figure 4: Normalized On-Resistance Vs. Case
Temperature
Page 4 of 7
Rev.1.0
SSF2N60D2
600V N-Channel MOSFET
Preliminary
Typical Electrical and Thermal Characteristics
Figure 5. Maximum Drain Current Vs. Case
Figure 6.Typical Capacitance Vs. Drain-to-Source
Temperature
www.goodark.com
Voltage
Page 5 of 7
Rev.1.0
SSF2N60D2
600V N-Channel MOSFET
Preliminary
Mechanical Data
TO-252 PACKAGE OUTLINE DIMENSION
Symbol
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
www.goodark.com
Dimension In Millimeters
Min
Nom
Max
0.400
0.900
1.400
5.350
5.850
6.350
4.800
5.300
5.800
0.980
0.100
1.020
5.800
6.300
6.800
2.200
2.300
2.400
0.600
0.700
0.800
0.200
0.700
1.200
0.700
0.800
0.900
0.408
0.508
0.608
2.050
2.300
2.550
0.550
0.800
1.050
0.408
0.508
0.608
1.050
1.300
1.550
1.250
1.500
1.750
Page 6 of 7
Min
0.016
0.211
0.189
0.039
0.228
0.087
0.024
0.008
0.028
0.016
0.081
0.022
0.016
0.041
0.049
Dimension In Inches
Nom
0.035
0.230
0.209
0.004
0.248
0.091
0.028
0.028
0.031
0.020
0.091
0.031
0.020
0.051
0.059
Max
0.055
0.250
0.228
0.040
0.268
0.094
0.031
0.047
0.035
0.024
0.100
0.041
0.024
0.061
0.069
Rev.1.0
SSF2N60D2
600V N-Channel MOSFET
Preliminary
Ordering and Marking Information
Device Marking: SSF2N60D2
Package (Available)
TO-252（DPAK）
Operating Temperature Range
C : -55 to 150 ºC
Devices per Unit
Package Units/ Tubes/Inner
Type
Tube Box
Units/Inner
Box
Inner
Boxes/Carton
Box
Units/Carton
Box
TO-252
4000
10
40000
80
50
Reliability Test Program
Test Item
Conditions
Duration
Sample Size
High
Temperature
Reverse
Bias(HTRB)
High
Temperature
Gate
Bias(HTGB)
Tj=125℃ to 150℃ @
80% of Max
VDSS/VCES/VR
168 hours
500 hours
1000 hours
3 lots x 77 devices
Tj=150℃ @ 100% of
Max VGSS
168 hours
500 hours
1000 hours
3 lots x 77 devices
www.goodark.com
Page 7 of 7
Rev.1.0