AO4611 60V Dual P + N-Channel MOSFET General Description Product Summary The AO4611 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. N-Channel VDS (V) = 60V ID = 6.3A (VGS=10V) RDS(ON) < 25mΩ (VGS=10V) < 30mΩ (VGS=4.5V) P-Channel -60V -4.9A 100% UIS Tested 100% Rg Tested 100% UIS Tested 100% Rg Tested < 42mΩ (VGS = -10V) < 52mΩ (VGS = -4.5V) SOIC-8 Top View D2 Bottom View D1 Top View S2 G2 S1 G1 D2 D2 D1 D1 G2 G1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 60 Gate-Source Voltage Continuous Drain Current A VGS TA=25°C TA=70°C Pulsed Drain Current B TA=25°C Power Dissipation S1 n-channel TA=70°C Junction and Storage Temperature Range Max p-channel -60 ±20 ±20 6.3 -4.9 ID 5 -3.9 IDM 40 -30 TJ, TSTG A 2 2 1.28 -55 to 150 -55 to 150 Symbol RθJA RθJL RθJA RθJL Units V V 1.28 PD Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. p-channel W °C Device n-ch n-ch n-ch Typ 48 74 35 Max 62.5 110 60 Units °C/W °C/W °C/W p-ch p-ch p-ch 48 74 35 62.5 110 40 °C/W °C/W °C/W AO4611 N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current 5 Gate-Body leakage current VDS=0V, VGS= ±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=250µA 1.5 ID(ON) On state drain current VGS=10V, VDS=5V 40 VGS=10V, ID=6.3A TJ=125°C VGS=4.5V, ID=5.7A gFS Forward Transconductance VDS=5V, ID=6.3A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Units V 1 TJ=55°C Static Drain-Source On-Resistance Max 60 VDS=48V, VGS=0V IGSS RDS(ON) Typ 100 nA 2.1 3 V 20 25 34 42 22 30 mΩ 1 V 3 A A mΩ 27 0.74 1920 VGS=0V, VDS=30V, f=1MHz µA S 2300 pF 155 pF 116 pF 0.65 0.8 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 47.6 58 nC Qg(4.5V) Total Gate Charge 24.2 30 nC Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=30V, ID=6.3A 6 nC 14.4 nC 7.6 ns VGS=10V, VDS=30V, RL=4.7Ω, RGEN=3Ω 5 ns 28.9 ns IF=6.3A, dI/dt=100A/µs 33.2 5.5 Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=6.3A, dI/dt=100A/µs ns 40 43 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating. Rev5: Nov. 2010 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4611 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 40 30 10V 4V 25 VDS=5V 30 125°C 20 ID(A) ID (A) 4.5V 20 3.5V 15 10 10 25°C 5 VGS=3V 0 0 0 1 2 3 4 5 1.5 2 VDS (Volts) Fig 1: On-Region Characteristics 3.5 4 Normalized On-Resistance 2.2 22 RDS(ON) (mΩ ) 3 VGS(Volts) Figure 2: Transfer Characteristics 24 VGS=4.5V 20 VGS=10V 18 16 VGS=10V ID=6.3A 2 1.8 VGS=4.5V 1.6 ID=5.7A 1.4 1.2 1 0.8 0 5 10 15 20 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 50 1.0E+01 ID=6.3A 1.0E+00 40 125°C 125°C 1.0E-01 IS (A) RDS(ON) (mΩ ) 2.5 30 25°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4611 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 3500 10 VDS=30V ID=6.3A 3000 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 2500 2000 1500 Coss 1000 Crss 2 500 0 0 0 10 20 30 40 50 0 5 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 10ms 1s 1.0 30 Power (W) ID (Amps) 10.0 TJ(Max)=150°C TA=25°C 10µs 100µs 1ms 0.1s 10s TJ(Max)=150°C TA=25°C 10 0 0.001 1 10 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) Zθ JA Normalized Transient Thermal Resistance 20 DC 0.1 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 30 40 RDS(ON) limited 0.1 10 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4611 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -60 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -30 VGS=-10V, ID=-4.9A Static Drain-Source On-Resistance TJ=125°C VGS=-4.5V, ID=-4.4A nA -3 V 34 42 58 72 42 52 A Forward Transconductance VDS=-5V, ID=-4.9A 17.8 Diode Forward Voltage IS=-1A,VGS=0V -0.73 IS Maximum Body-Diode Continuous Current Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance 2417 VGS=0V, VDS=-30V, f=1MHz µA ±100 gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units -1.9 VSD Coss Max V VDS=-48V, VGS=0V IGSS RDS(ON) Typ mΩ mΩ S -1 V -3 A 2900 pF 179 pF 120 pF 1.9 2.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) 45.2 55 nC Qg(4.5V) Total Gate Charge (4.5V) 22.8 28 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-30V, ID=-4.9A 5.8 nC 9.6 nC 9.8 ns 6.1 ns 44 ns tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=-4.9A, dI/dt=100A/µs 32 Qrr Body Diode Reverse Recovery Charge IF=-4.9A, dI/dt=100A/µs 42 VGS=-10V, VDS=-30V, RL=6.2Ω, RGEN=3Ω 12.7 ns 42 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. givenapplication applicationdepends dependson onthe theuser's user'sspecific specificboard boarddesign. design.The Thecurrent currentrating ratingisisbased basedon onthe thet t ≤≤ 10s thermal The value in any agiven resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. 80 µs µs pulses, duty cycle 0.5% max. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev5: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO4611 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 30 25 -10V -4V -3.5V -6V VDS=-5V 25 20 -ID(A) -ID (A) 20 15 10 -3V 15 10 125°C 5 5 25°C VGS=-2.5V 0 0 0 1 2 3 4 5 1 1.5 50 Normalized On-Resistance RDS(ON) (mΩ ) 2.5 3 3.5 4 2 VGS=-4.5V 45 40 35 VGS=-10V ID=-4.9A 1.8 VGS=-10V 1.6 1.4 VGS=-4.5V ID=-4.4A 1.2 1 0.8 30 0 5 10 15 0 20 25 100 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 90 ID=-4.9A 80 1.0E+00 1.0E-01 125°C 70 125°C 1.0E-02 -IS (A) RDS(ON) (mΩ ) 2 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 60 1.0E-03 50 1.0E-04 40 25°C 25°C 1.0E-05 30 1.0E-06 20 0.0 2 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AO4611 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 3500 10 VDS=-30V ID=-4.9A 3000 Capacitance (pF) -VGS (Volts) 8 6 4 Ciss 2500 2000 1500 1000 2 Coss Crss 500 0 0 0 10 20 30 40 50 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 100µs 1ms 0.1s 10µs 50 60 30 Power (W) -ID (Amps) 40 TJ(Max)=150°C TA=25°C RDS(ON) limited 10ms 1s 20 10 10s DC 0.1 0.1 30 40 TJ(Max)=150°C, T A=25°C 1.0 20 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 10 1 10 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000