AOP611 Complementary Enhancement Mode Field Effect Transistor General Description Features The AOP611 uses advanced trench technology MOSFETs to provide excellen RDS(ON) and low gate charge. The complementary MOSFETs may be used in H-bridge, Inverters and other applications. Standard Product AOP611 is Pb-free (meets ROHS & Sony 259 specifications). AOP611L is a Green Product ordering option. AOP611 and AOP611L are electrically identical. n-channel VDS (V) = 40V ID = 6.5A (VGS=10V) RDS(ON) < 35mΩ (VGS=10V) < 47mΩ (VGS=4.5V) p-channel -40V -5.5A (VGS = -10V) RDS(ON) < 52mΩ (VGS = -10V) < 80mΩ (VGS = -4.5V) ESD rating: 3000V (HBM) UIS TESTED! Rg,Ciss,Coss,Crss Tested D1 D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G2 G1 S2 PDIP-8 n-channel p-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 40 VGS Gate-Source Voltage ±20 Continuous Drain TA=25°C 6.5 Current A TA=70°C ID 5.3 B Pulsed Drain Current IDM 30 TA=25°C TA=70°C Power Dissipation Avalanche Current B B Repetitive avalanche energy 0.3mH Junction and Storage Temperature Range Alpha & Omega Semiconductor, Ltd. Units V V -5.5 A -4.4 -25 2.5 1.6 17 43 A mJ -55 to 150 -55 to 150 °C IAR Thermal Characteristics: n-channel and p-channel Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-LeadC Max p-channel -40 ±20 2.5 1.6 13 25 PD EAR TJ, TSTG S1 Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch p-ch p-ch p-ch Typ 37 74 28 35 73 32 W Max 50 90 40 50 90 40 Units °C/W °C/W °C/W °C/W °C/W °C/W AOP611 N Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 40 1 TJ=55°C 5 IGSS Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage VDS=VGS ID=250µA 1 ID(ON) On state drain current VGS=10V, VDS=5V 30 RDS(ON) Static Drain-Source On-Resistance VGS=10V, ID=6.5A TJ=125°C VGS=4.5V, ID=5A gFS Forward Transconductance VSD IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous Current VDS=5V, ID=6.5A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Max Units V VDS=32V, VGS=0V VGS(th) IS Typ 2.2 µA 1 mA 3 V A 28.5 35 40 48 38.5 47 mΩ 1 V 3.5 A 18 0.76 mΩ S 506 pF VGS=0V, VDS=30V, f=1MHz 106 pF VGS=0V, VDS=0V, f=1MHz 2.6 38 VGS=10V, VDS=20V, ID=6.7A pF 3.9 Ω 8.4 nC 4.1 nC 1.6 nC Qgs Gate Source Charge Qgd Gate Drain Charge 2.6 nC tD(on) Turn-On DelayTime 4.8 ns tr Turn-On Rise Time 2 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=20V, RL=3Ω, RGEN=3Ω 17 ns 2.1 ns IF=6.5A, dI/dt=100A/µs 17.5 Body Diode Reverse Recovery Charge IF=6.5A, dI/dt=100A/µs 11.1 ns nC A: The value of R θJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. Rev 0: October 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOP611 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 30 25 20 5V 10V VDS=5V 4.5V 15 4V ID(A) ID (A) 20 15 10 125°C 10 VGS=3.5V 5 5 -40°C 0 0 1 2 3 4 0 5 2 2.5 VDS (Volts) Figure 1: On-Region Characteristics 3.5 4 4.5 5 Normalized On-Resistance 1.8 VGS=4.5V RDS(ON) (mΩ) 3 VGS(Volts) Figure 2: Transfer Characteristics 50 40 30 VGS=10V 20 0 5 10 15 VGS=10V ID=6.5A 1.6 1.4 VGS=4.5V ID=5A 1.2 1 0.8 0.6 20 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 70 ID=6.5A 60 1.0E+00 125°C 1.0E-01 50 125°C IS (A) RDS(ON) (mΩ) 25°C 40 30 25°C 1.0E-02 1.0E-03 25°C -40°C 1.0E-04 20 1.0E-05 10 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOP611 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: N-CHANNEL 10 800 VDS=30V ID= 6.5A Capacitance (pF) VGS (Volts) 8 6 4 2 600 Ciss 400 Coss Crss 200 0 0 0 2 4 6 8 0 10 10 20 40 VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.00 40 TJ(Max)=150°C TA=25°C 10µs 10.00 100µs 30 1ms RDS(ON) limited 1.00 10ms 0.1s 1s 10s DC 0.10 Power (W) ID (Amps) 30 20 10 TJ(Max)=150°C TA=25°C 0 0.001 0.01 0.1 1 10 100 Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AOP611 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -40 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1 ID(ON) On state drain current VGS=-10V, VDS=-5V -25 RDS(ON) Static Drain-Source On-Resistance TJ=55°C VGS=-10V, ID=-5.5A TJ=125°C VGS=-4.5V, ID=-4.4A gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current VDS=-5V, ID=-5.5A DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) Max VGS=0V, VDS=-20V, f=1MHz -5 -2 VGS=-10V, VDS=-20V, ID=-5.5A µA ±150 µA -3 V A 43 52 60 72 65 80 mΩ -1 V -3.5 A 11 -0.76 mΩ S 1006 pF 152 pF 77 VGS=0V, VDS=0V, f=1MHz Units V VDS=-32V, VGS=0V IDSS IS Typ 11 pF 16.5 Ω 17.4 nC 8.8 nC 3.3 nC Qgs Gate Source Charge Qgd Gate Drain Charge 4.5 nC tD(on) Turn-On DelayTime 9.7 ns tr Turn-On Rise Time 6.3 ns 35.5 ns 26 ns 22 ns nC VGS=-10V, VDS=-20V, RL=3.6Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=-5.5A, dI/dt=100A/µs IF=-5.5A, dI/dt=100A/µs 15.9 2 A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 0: October 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE Alpha & Omega Semiconductor, Ltd. AOP611 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 25 30 -10V 25 -6V -4.5V 20 -4V 15 -ID(A) -ID (A) 20 15 5 VGS=-3V 0 0 1 2 3 4 0 5 1 1.5 -VDS (Volts) Fig 1: On-Region Characteristics 2 2.5 3 3.5 4 4.5 5 5.5 -VGS(Volts) Figure 2: Transfer Characteristics 80 Normalized On-Resistance 1.8 70 RDS(ON) (mΩ) 125°C 25°C 10 -3.5V 10 5 -40°C VDS=-5V -5V VGS=-4.5V 60 50 40 VGS=-10V VGS=-10V ID=-5.5A 1.6 1.4 1.2 VGS=-4.5V ID=-4.4A 1 0.8 0.6 30 -50 0 2 4 6 8 10 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1.0E+01 100 90 ID=-5.5A 1.0E+00 80 125°C 1.0E-01 -IS (A) RDS(ON) (mΩ) -25 70 60 25°C 125°C 1.0E-02 1.0E-03 1.0E-04 25°C 50 1.0E-05 -40°C 40 2 3 4 5 6 7 8 9 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 1.0E-06 0.0 0.2 0.4 0.6 0.8 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.0 AOP611 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 10 1400 VDS=-30V ID=-5.5A 1200 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 1000 800 600 Coss 400 Crss 200 0 0 5 10 15 0 20 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 10 20 100.00 40 100µs RDS(ON) limited 10ms 30 1ms 0.1s TJ(Max)=150°C TA=25°C 0.10 DC 20 10 1s 10s 0.01 0.1 Power (W) ID (Amps) 1.00 40 TJ(Max)=150°C TA=25°C 10µs 10.00 30 -VDS (Volts) Figure 8: Capacitance Characteristics 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 Pulse 0.1 Width (s) 0.001 0.01 1 10 Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000