AO4622 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4622 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard product AO4622 is Pb-free (meets ROHS & Sony 259 specifications). n-channel VDS (V) = 20V ID = 7.3A (VGS=4.5V) RDS(ON) < 23mΩ (VGS=10V) < 30mΩ (VGS=4.5V) < 84mΩ (VGS=2.5V) p-channel -20V -5A (VGS=-4.5V) RDS(ON) < 53mΩ (VGS = -4.5V) < 87mΩ (VGS = -2.5V) D2 D1 S1 G1 S2 G2 1 2 3 4 8 7 6 5 D1 D1 D2 D2 G2 G1 S2 S1 SOIC-8 p-channel n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 20 V Gate-Source Voltage ±16 GS Continuous Drain AF Current Pulsed Drain Current TA=70°C Power Dissipation B Avalanche Current 6.2 -4.2 35 -25 2 2 1.44 1.44 13 13 A 25 25 -55 to 150 -55 to 150 mJ °C PD TA=70°C Repetitive avalanche energy 0.3mH IAR B Junction and Storage Temperature Range EAR TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. V ±12 -5 ID IDM TA=25°C Units V 7.3 TA=25°C B Max p-channel -20 Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch Typ 48 74 35 p-ch p-ch p-ch 48 74 35 A W Max 62.5 110 40 Units °C/W °C/W °C/W 62.5 °C/W 110 °C/W 40 °C/W www.aosmd.com AO4622 N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V 1 TJ=55°C Gate-Body leakage current VDS=0V, VGS=±16V VDS=VGS ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 35 VGS=10V, ID=7.3A TJ=125°C Reverse Transfer Capacitance Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr 23 28 33.6 A mΩ 30 mΩ 84 mΩ VDS=5V, ID=7.3A DYNAMIC PARAMETERS Ciss Input Capacitance Rg 19 24 Diode Forward Voltage IS=1A Maximum Body-Diode Continuous Current Crss V 67 Forward Transconductance Output Capacitance nA 2 VGS=4.5V, ID=6.4A VSD Coss 100 1.25 VGS=2.5V, ID=4.5A gFS IS uA 5 Gate Threshold Voltage Units V VDS=16V, VGS=0V VGS(th) Static Drain-Source On-Resistance Max 20 IGSS RDS(ON) Typ 17 0.7 900 VGS=0V, VDS=10V, f=1MHz S 1 V 3 A 1100 pF 162 pF 105 VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=10V, ID=6.5A VGS=10V, VDS=10V, RL=1.4Ω, RGEN=3Ω IF=7.3A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=7.3A, dI/dt=100A/µs pF 1.8 2.7 Ω 15 18 nC 7.2 9 nC 1.8 nC 2.8 nC 4.5 ns 9.2 ns 18.7 ns 3.3 ns 18 ns nC 9.5 A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. R θJL and RθJC are equivalent terms referring to thermal resistance from junction to drain lead. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev1:Nov. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4622 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 30 6V 10V 4.5V 50 125°C -40°C 20 3.5V 30 ID(A) ID (A) 40 25°C VDS=5V 25 20 15 1.4 10 494 692 VGS=3V 10 5 593 830 0 0 1 2 3 4 0 5 1 VDS (Volts) Figure 1: On-Region Characteristics 2 3 4 VGS(Volts) Figure 2: Transfer Characteristics 193 18 1.60 100 VGS=10V, 7.3A Normalized On-Resistance 90 RDS(ON) (mΩ) 80 1.40 70 VGS=2.5V 60 40 1.00 VGS=4.5V 30 10 0 5 10 15 VGS=2.5V, 5.5A 0.80 VGS=10V 0 VGS=4.5V, 6.4A 1.20 50 20 20 25 30 0.60 -50 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage -25 0 25 50 59 75 142 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.E+02 40 1.E+01 ID=7.3A 35 1.E+00 1.E-01 125°C 25 125°C IS (A) 30 RDS(ON) (mΩ) 5 -40°C 1.E-02 20 25°C 1.E-03 25°C 15 1.E-04 10 3 4 5 6 7 8 9 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 1.E-05 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 www.aosmd.com AO4622 N-Channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1400 1200 VDS=10V ID=7.3A Ciss 1000 Capacitance (pF) VGS (Volts) 8 6 4 2 800 1.4 600 Coss 400 200 494 692 593 830 Crss 0 0 0 3 6 Qg (nC) 9 12 Figure 7: Gate-Charge Characteristics 0 15 100.0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 193 18 50 10µs 1ms 40 10ms RDS(ON) limited 1.0 1s 0.1s 10s 0.1 Power (W) ID (Amps) 10.0 100µs 10 0.0 1 10 0 0.0001 100 0.01 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) ZθJA Normalized Transient Thermal Resistance 10 20 DC TJ(Max)=150°C TA=25°C 0.1 TJ(Max)=150°C TA=25°C 30 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.001 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4622 P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 -5 Gate-Body leakage current VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS ID=-250µA -1.3 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -25 ±100 nA -0.5 V 44 53 59 71 VGS=-2.5V, ID=-4.2A 67 87 VDS=-5V, ID=-5A 13 TJ=125°C Static Drain-Source On-Resistance gFS Forward Transconductance VSD Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg(10V) Total Gate Charge (10V) Qg(4.5V) Total Gate Charge (4.5V) µA -0.9 VGS=-4.5V, ID=-5A Coss Units V TJ=55°C VGS(th) IS Max -1 VDS=-16V, VGS=0V IGSS RDS(ON) Typ A -0.76 800 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz mΩ mΩ S -1 V -2.5 A 960 pF 131 pF 103 pF 6.7 10 15.5 Ω nC 7.4 nC 1.3 nC Gate Drain Charge 2.9 nC Turn-On DelayTime 4.4 ns 7.6 ns Qgs Gate Source Charge Qgd tD(on) tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr VGS=-4.5V, VDS=-10V, ID=-4.5A VGS=-4.5V, VDS=-10V, RL=2Ω, RGEN=3Ω 44 ns 13.5 ns IF=-5A, dI/dt=100A/µs 20 Body Diode Reverse Recovery Charge IF=-5A, dI/dt=100A/µs 9 ns nC A: The value of R θJA is measured with the device mounted on 1in 22 FR-4 board with 2oz. Copper, in a still air environment with T AA =25°C. The θJA value in any given application depends on theon user's specific boardboard design. The value in any a given application depends the user's specific design. The current rating is based on the t ≤ 10s thermal B: Repetitive rating, pulse width limited by junction temperature. resistance rating. the sum of the thermal junction to lead R θJL and lead to ambient. R θJL and RθJC are equivalent terms referring to C. The R θJA israting, B: Repetitive pulse width limitedimpedence by junctionfrom temperature. thermal fromof junction to drain lead. C. The Rresistance the thermal impedence from junction to lead R θJL and lead to ambient. θJA is the sum D. The static characteristics in Figures 1 to 6 are obtained using <300 dutyduty cycle 0.5% max. 6,12,14 are obtained using µs 80 pulses, µs pulses, cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 22 FR-4 board with 2oz. Copper, in a still air environment with T AA=25°C. The SOA curve provides a single pulsepulse rating.rating. SOA curve provides a single F. The current rating is based on the t ≤ 10s thermal resistance rating. Rev1: Nov. 2006 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. www.aosmd.com AO4622 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 20 25 -10V -3.5V 15 -4.5V VDS=-5V -6V 15 -ID(A) -ID (A) 20 VGS=-2.5V 10 10 25°C 5 5 0 0 0 1 2 3 4 5 0.5 1.0 1.5 2.0 2.5 3.0 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 80 Normalized On-Resistance 1.6 70 VGS=-2.5V RDS(ON) (mΩ) -40°C 125°C 60 50 VGS=-4.5V 40 1.4 VGS=-2.5V ID=-5A 1.2 VGS=-4.5V ID=-4.2A 1 0.8 0.6 30 0 5 10 15 20 -50 25 -25 0 25 50 75 100 125 150 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 80 1.0E+02 ID=-5A 1.0E+01 1.0E+00 125°C 1.0E-01 -IS (A) RDS(ON) (mΩ) 60 125°C 1.0E-02 1.0E-03 40 25°C 1.0E-04 25°C -40°C 1.0E-05 1.0E-06 20 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd. 10 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics www.aosmd.com AO4622 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS: P-CHANNEL 1250 10 1000 VDS=-10V ID=-5A Capacitance (pF) -VGS (Volts) 8 6 4 2 750 500 Coss 250 0 Crss 0 0 4 8 12 16 0 -Qg (nC) Figure 7: Gate-Charge Characteristics 5 10 60 Power (W) 1ms 100µ 10ms RDS(ON) limited 1 0.1s 10s 0 DC 40 30 20 1s TJ(Max)=150°C TA=25°C 10 0 0.1 20 TJ(Max)=150°C TA=25°C 50 10µs 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 100 ID (Amps) Ciss 1 10 100 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 0 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) ZθJA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 0.01 100 1000 www.aosmd.com