AO4601 Complementary Enhancement Mode Field Effect Transistor General Description Features The AO4601 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications. Standard Product AO4601 is Pb-free (meets ROHS & Sony 259 specifications). AO4601L is a Green Product ordering option. AO4601 and AO4601L are n-channel p-channel -30V VDS (V) = 30V ID = 4.7A (VGS=10V) -8A (VGS = -20V) RDS(ON) RDS(ON) < 55mΩ (VGS=10V) < 18mΩ (VGS = -20V) < 70mΩ (VGS=4.5V) < 19mΩ (VGS = -10V) < 110mΩ (VGS = 2.5V) D1 D2 S2 G2 S1 G1 1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 SOIC-8 p-channel n-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Max n-channel Symbol VDS Drain-Source Voltage 30 VGS Gate-Source Voltage Pulsed Drain Current TA=70°C B TA=25°C Power Dissipation ±12 ±25 4.7 -8 ID 4 -6.9 IDM 30 -50 2 2 1.44 1.44 -55 to 150 -55 to 150 TA=25°C Continuous Drain Current A TA=70°C Junction and Storage Temperature Range PD TJ, TSTG Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A A Steady-State Maximum Junction-to-Ambient C Steady-State Maximum Junction-to-Lead A t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient Steady-State Maximum Junction-to-Lead C Alpha & Omega Semiconductor, Ltd. Max p-channel -30 Symbol RθJA RθJL RθJA RθJL Device n-ch n-ch n-ch Typ 52 78 48 p-ch p-ch p-ch 50 73 31 Units V V A W °C Max Units 62.5 °C/W 110 °C/W 60 °C/W 62.5 110 40 °C/W °C/W °C/W AO4601 n-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current IGSS Min Conditions ID=250µA, VGS=0V TJ=55°C 5 VDS=0V, VGS=±12V Gate Threshold Voltage VDS=VGS ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 10 VGS=10V, ID=4A Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge V A VGS=4.5V, ID=3A 55 70 mΩ VGS=2.5V, ID=2A 83 110 mΩ 1 V 2.5 A VDS=5V, ID=4A DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance 1.4 55 Forward Transconductance Crss nA 80 Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current Output Capacitance 100 45 VSD Coss 1 µA 66 TJ=125°C gFS IS Units V 1 Gate-Body leakage current Static Drain-Source On-Resistance Max 30 VDS=24V, VGS=0V VGS(th) RDS(ON) Typ mΩ 8 0.8 S 390 pF 54.5 pF 41 pF VGS=0V, VDS=0V, f=1MHz 3 Ω 0.6 nC VGS=4.5V, VDS=15V, ID=4A 1.38 nC VGS=0V, VDS=15V, f=1MHz Qgd Gate Drain Charge 4.34 nC tD(on) Turn-On DelayTime 3.3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=10V, VDS=15V, RL=3.75Ω, RGEN=6Ω 1 ns 21.7 ns 2.1 ns trr Body Diode Reverse Recovery Time IF=4A, dI/dt=100A/µs 12 Qrr Body Diode Reverse Recovery Charge IF=4A, dI/dt=100A/µs 6.3 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 3 : Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. AO4601 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 15 10V 3V 12 8 VDS=5V 4.5V 6 ID(A) ID (A) 9 2.5V 4 6 125°C 3 2 VGS=2V 0 25°C 0 0 1 2 3 4 5 0 0.5 150 1.5 2 2.5 3 3.5 1.8 Normalized On-Resistance 125 VGS=2.5V RDS(ON) (mΩ) 1 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 100 75 VGS=4.5V 50 25 VGS=10V 1.6 VGS=4.5V VGS=10V 1.4 1.2 VGS=2.5V 1 0 0 2 4 6 8 0.8 10 0 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 200 1.0E+00 ID=2A 1.0E-01 125°C 100 IS (A) RDS(ON) (mΩ) 150 125°C 1.0E-02 1.0E-03 25°C 1.0E-04 50 25°C 1.0E-05 1.0E-06 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4601 N-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600 5 VDS=15V ID=4A 500 Capacitance (pF) VGS (Volts) 4 3 2 1 Ciss 400 300 200 Coss 100 0 Crss 0 0 1 2 3 4 5 0 Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 TJ(Max)=150°C TA=25°C RDS(ON) limited 100µs 15 10µs 1ms 10ms 1.0 15 20 Power (W) ID (Amps) 10.0 10 VDS (Volts) Figure 8: Capacitance Characteristics TJ(Max)=150°C TA=25°C 100.0 5 1s 0.1 10 5 10s DC 0.1 0.1 1 10 0 0.001 100 VDS (Volts) Z θJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000 AO4601 p-channel MOSFET Electrical Characteristics (T J=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=-250µA, VGS=0V -30 IGSS Gate-Body leakage current VDS=0V, VGS=±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.7 ID(ON) On state drain current VGS=-10V, VDS=-5V 40 TJ=55°C Crss Reverse Transfer Capacitance Rg Gate resistance SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd V A 25 VGS=-20V, ID=-8A 15 18 VGS=-4.5V, ID=-5A 33 VDS=-5V, ID=-8A DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance -3 19 Diode Forward Voltage IS=-1A,VGS=0V Maximum Body-Diode Continuous Current Coss nA 16 Forward Transconductance IS -2.5 ±100 20.5 TJ=125°C gFS VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-8A Gate Drain Charge 16 mΩ mΩ mΩ 21 -0.75 S -1 V -2.6 A 2076 pF 503 pF 302 pF 2 Ω 39 nC 8 nC 11.4 nC 12.7 ns 7 ns 25.2 ns 12 ns ns nC tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time IF=-8A, dI/dt=100A/µs 32 Qrr Body Diode Reverse Recovery Charge IF=-8A, dI/dt=100A/µs 26 VGS=-10V, VDS=-15V, RL=1.8Ω, RGEN=3Ω µA -5 VGS=-10V, ID=-8A VSD Units -1 Zero Gate Voltage Drain Current Static Drain-Source On-Resistance Max V VDS=-24V, VGS=0V IDSS RDS(ON) Typ A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. Rev 3 : Sept 2005 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. AO4601 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 -10V -8V 25 -6V VDS=-5V -5.5V 40 20 15 -ID(A) -ID (A) -5V 30 -4.5V 10 VGS=-4V 5 20 125°C 10 25°C 0 0 0 1 2 3 4 5 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 -VGS(Volts) Figure 2: Transfer Characteristics -VDS (Volts) Fig 1: On-Region Characteristics 30 1.4 ID=-8A VGS=-6V Normalized On-Resistance RDS(ON) (mΩ) 25 20 15 VGS=-10V 10 5 1.3 VGS=-10V 1.2 1.1 VGS=-4.5V 1 0.9 0 0 5 10 15 20 0.8 25 0 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 60 1.0E+01 50 1.0E+00 1.0E-01 -IS (A) 40 30 125°C 20 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID=-8A RDS(ON) (mΩ) 25 125°C 1.0E-02 1.0E-03 1.0E-04 25°C 25°C 10 1.0E-05 1.0E-06 0 2 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Alpha and Omega Semiconductor, Ltd. 0.0 0.2 0.4 0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics 1.2 AO4601 P-CHANNEL TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3000 10 VDS=-15V ID=-8A 2500 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 2000 1500 Coss 1000 Crss 500 0 0 5 10 15 20 25 30 35 0 40 0 5 -Qg (nC) Figure 7: Gate-Charge Characteristics 20 25 30 40 TJ(Max)=150°C TA=25°C 100µs 1ms RDS(ON) 10.0 limited TJ(Max)=150°C TA=25°C 10µs 30 Power (W) -ID (Amps) 15 -VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10ms 0.1s 1.0 10 1s 20 10 10s DC 0 0.01 0.1 0.1 1 10 100 -VDS (Volts) Z θJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=62.5°C/W 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 10 0.1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance Alpha & Omega Semiconductor, Ltd. 100 1000