SW2N7002

SW2N7002
N-channel Enhanced mode SOT-23 MOSFET
Features
BVDSS : 60V
SOT-23
: 0.3A
ID
 High Switching Speed
 Low RDS(ON) (Typ 2.3Ω)@VGS=5V
 Low RDS(ON) (Typ 1.75Ω)@VGS=10V
 Low Gate Charge (Typ 1.7nC)
 Application: Small Servo Motor Control,
Switch
RDS(ON)：1.75Ω @VGS=10V
1. Gate 2. Source 3. Drain
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW E 2N7002
SW2N7002
SOT-23
REEL
Value
Unit
60
V
Continuous drain current (@TC=25oC)
0.3*
A
Continuous drain current (@TC=100oC)
0.19*
A
1.2
A
Absolute maximum ratings
Symbol
VDSS
Parameter
Drain to source voltage
ID
IDM
Drain current pulsed
VGS
Gate to source voltage
±20
V
PD
Total power dissipation (@TC=25oC)
0.35
W
-55 ~ + 150
oC
Value
Unit
350
oC/W
TSTG, TJ
(note 1)
Operating junction temperature & storage temperature
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Rthja
Parameter
Thermal resistance, Junction to ambient(note 2)
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Oct. 2015. Rev. 2.0
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SW2N7002
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BVDSS
IDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
60
V
VDS=60V, VGS=0V
1
uA
VDS=48V, TC=125oC
50
uA
VGS=10V, VDS=0V
500
nA
VGS=20V, VDS=0V
10
uA
VGS=-10V, VDS=0V
-500
nA
VGS=-20V, VDS=0V
-10
uA
2.5
V
Drain to source leakage current
Gate to source leakage current, forward
IGSS
Gate to source leakage current, reverse
On characteristics (note 3)
VGS(TH)
Gate threshold voltage
RDS(ON)
Drain to source on state resistance
Gfs
Forward transconductance
VDS=VGS, ID=250uA
1.0
VGS=5V, ID = 0.4A
2.3
3
Ω
VGS=10V, ID = 0.5A
1.75
2
Ω
VDS = 10 V, ID = 0.2 A
0.3
S
Dynamic characteristics(note 4)
36
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
3
td(on)
Turn on delay time
13
tr
td(off)
tf
Qg
VGS=0V, VDS=25V, f=1MHz
18
VDS=30V, VGS=10V , ID=0.2A
RG=10Ω
Rising time
25
ns
Turn off delay time
46
Fall time
29
Total gate charge
pF
VDS=10V, VGS=4.5V, ID=0.3A
1.7
nC
Source to drain diode ratings characteristics
Symbol
Parameter
IS
Continuous source current
ISM
Pulsed source current
VSD
Diode forward voltage drop.
Test conditions
Min.
Typ.
Max.
Unit
0.2
A
0.8
A
1.4
V
Integral reverse p-n Junction
diode in the MOSFET
IS=0.2A, VGS=0V
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
Surface Mounted on FR4 Board,t ≤ 2%.
3.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
4.
Guaranteed by design,not subject to production.
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Oct. 2015. Rev. 2.0
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SW2N7002
Fig. 1. On-state characteristics
Fig. 3. Gate charge characteristics
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 4. Maximum safe operating area
Fig. 5. Capacitance Characteristics
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
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SW2N7002
Fig. 6. Transient thermal response curve
Fig. 7. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
10V
VDS
QGD
QGS
DUT
VGS
3mA
Charge(nC)
Fig. 8. Switching time test circuit & waveform
VDS
RL
90%
VDS
VDD
VIN
10VIN
RGS
DUT
10%
10%
td(on)
tr
tON
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
td(off)
tf
tOFF
Oct. 2015. Rev. 2.0
4/5
SW2N7002
DISCLAIMER
* All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification standards can also be found on the Web site (http://www.semipower.com.cn)
* Suggestions for improvement are appreciated, Please send your suggestions to [email protected]
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
5/5