SW7N80U

SW7N80U
N-channel Enhanced mode TO-220F/TO-262 MOSFET
Features






TO-262
TO-220F
BVDSS : 800V
: 7A
ID
High ruggedness
Low RDS(ON) (Typ 1.4Ω)@VGS=10V
Low Gate Charge (Typ 43nC)
Improved dv/dt Capability
100% Avalanche Tested
Application: Charge，LED，SMPS
RDS(ON) : 1.4Ω
1
2
1
3
2
2
3
1. Gate 2. Drain 3. Source
1
3
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW F 7N80U
SW7N80U
TO-220F
TUBE
2
SW U 7N80U
SW7N80U
TO-262
TUBE
Absolute maximum ratings
Symbol
VDSS
ID
Value
Parameter
TO-220F
TO-262
Unit
Drain to source voltage
800
V
Continuous drain current (@TC=25oC)
7.0*
A
Continuous drain current (@TC=100oC)
4.4*
A
28
A
±30
V
IDM
Drain current pulsed
VGS
Gate to source voltage
EAS
Single pulsed avalanche energy
(note 2)
659
mJ
EAR
Repetitive avalanche energy
(note 1)
118
mJ
Peak diode recovery dv/dt
(note 3)
4.5
V/ns
dv/dt
PD
TSTG, TJ
TL
(note 1)
Total power dissipation (@TC=25oC)
Derating factor above 25oC
65
290.7
W
0.52
2.33
W/oC
Operating junction temperature & storage temperature
-55 ~ + 150
oC
300
oC
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Value
Parameter
Rthjc
Thermal resistance, Junction to case
Rthja
Thermal resistance, Junction to ambient
Unit
TO-220F
1.9
TO-262
0.4
oC/W
47.7
62.1
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
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SW7N80U
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
IDSS
Drain to source leakage current
BVDSS
800
V
V/oC
0.8
VDS=800V, VGS=0V
1
uA
VDS=640V, TC=125oC
50
uA
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-100
nA
5
V
1.9
Ω
IGSS
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID = 3.5A
1.4
Forward transconductance
VDS=20 V, ID= 3.5 A
8.4
Gfs
3
S
Dynamic characteristics
1400
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
35
td(on)
Turn on delay time
21
tr
td(off)
tf
Qg
Rising time
Turn off delay time
VGS=0V, VDS=25V, f=1MHz
130
VDS=400V, ID=7A, VGS=10V,
RG=25Ω
(note 4,5)
pF
33
ns
99
Fall time
35
43
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDS=640V, VGS=10V, ID=7A
(note 4,5)
8
nC
21
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
7
A
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
28
A
Diode forward voltage drop.
IS=7A, VGS=0V
1.4
V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IS=7A, VGS=0V,
dIF/dt=100A/us
IS
Continuous source current
ISM
VSD
441
ns
5.1
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 26.8mH, IAS = 7A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 7A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
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SW7N80U
Fig. 1. On-state characteristics
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 3. Gate charge characteristics
Fig. 4. On state current vs. diode
forward voltage
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 6. On resistance variation
vs. junction temperature
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Oct. 2015. Rev. 4.0
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SW7N80U
Fig. 7. Maximum safe operating area(TO-220F)
Fig. 8. Maximum safe operating area(TO-262)
Fig. 9. Transient thermal response curve(TO-220F)
Fig. 10. Transient thermal response curve(TO-262)
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
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SW7N80U
Fig. 11. Gate charge test circuit & waveform
VGS
Same type
as DUT
QG
10V
VDS
QGD
QGS
DUT
VGS
2mA
Charge(nC)
Fig. 12. Switching time test circuit & waveform
VDS
RL
RGS
VDS
VDD
VIN
10VIN
90%
DUT
10%
10%
td(on)
tr
tON
td(off)
tf
tOFF
Fig. 13. Unclamped Inductive switching test circuit & waveform
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
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SW7N80U
Fig. 14. Peak diode recovery dv/dt test circuit & waveform
DUT
+ VDS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
10VGS
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VDD
VF
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification standards can also be found on the Web site (http://www.semipower.com.cn)
* Suggestions for improvement are appreciated, Please send your suggestions to [email protected]
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 4.0
6/6