SW2N10

SW2N10
N-channel Enhanced mode SOT-23 MOSFET
Features
 High ruggedness
 Low RDS(ON) (Typ 0.19Ω)@VGS=10V
(Typ 0.2Ω)@VGS=4.5V
 Low Gate Charge (Typ 13nC)
 Improved dv/dt Capability
 100% Avalanche Tested
 Application:DC-DC, Switch
SOT-23
BVDSS : 100V
3
ID
: 2A
RDS(ON) : 0.19Ω @VGS=10V
2
2
1
1
1. Gate 2. Drain 3. Source
3
General Description
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW E 2N10
SW 2N10
SOT-23
REEL
Value
Unit
100
V
Continuous drain current (@TC=25oC)
2*
A
Continuous drain current (@TC=100oC)
1.26*
A
8
A
±15
V
Absolute maximum ratings
Symbol
VDSS
Parameter
Drain to source voltage
ID
IDM
Drain current pulsed
VGS
Gate to source voltage
EAS
Single pulsed avalanche energy
(note 2)
64
mJ
EAR
Repetitive avalanche energy
(note 1)
5
mJ
Peak diode recovery dv/dt
(note 3)
5
V/ns
-55 ~ + 150
oC
300
oC
dv/dt
TSTG, TJ
TL
(note 1)
Operating junction temperature & storage temperature
Maximum lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
1/5
SW2N10
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
IDSS
Drain to source leakage current
BVDSS
IGSS
100
V
V/oC
0.1
VDS=100V, VGS=0V
VDS=80V, TC
=125oC
1
uA
50
uA
Gate to source leakage current, forward
VGS=15V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-15V, VDS=0V
100
nA
3
V
On characteristics
VGS(TH)
Gate threshold voltage
RDS(ON)
Drain to source on state resistance
VDS=VGS, ID=250uA
1
VGS=10V, ID =1A
0.19
0.24
Ω
VGS=4.5V,ID =1A
0.2
0.24
Ω
Dynamic characteristics
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
td(on)
Turn on delay time
tr
td(off)
tf
Qg
Rising time
Turn off delay time
550
VGS=0V, VDS=25V, f=1MHz
50
pF
33
3.5
VDS=50V, ID=2A, VGS=10V,
RG=25Ω
(note 4,5)
22
ns
40
Fall time
25
13
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDS=80V, VGS=10V, ID=2A
(note 4,5)
1.7
nC
3.2
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
IS
Continuous source current
ISM
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
VSD
Diode forward voltage drop.
IS=2A, VGS=0V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IS=2A, VGS=0V,
dIF/dt=100A/us
Min.
Typ.
Max.
Unit
2
A
8
A
1.4
V
28
ns
33
nC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 32.1mH, IAS = 2A, VDD = 50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 2A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%.
5.
Essentially independent of operating temperature.
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
2/5
SW2N10
Fig. 1. On-state characteristics
Fig. 3. Gate charge characteristics
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs. diode
forward voltage
Fig. 6. On resistance variation
vs. junction temperature
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
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SW2N10
Fig. 7. Capacitance Characteristics
Fig. 8. Gate charge test circuit & waveform
Fig. 9. Switching time test circuit & waveform
VDS
90%
RL
VDS
VDD
VIN
10VIN
RGS
DUT
10%
10%
td(on)
tr
tON
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
td(off)
tf
tOFF
Oct. 2015. Rev. 2.0
4/5
SW2N10
Fig. 10. Unclamped Inductive switching test circuit & waveform
Fig. 11. Peak diode recovery dv/dt test circuit & waveform
DUT
+ VDS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
10VGS
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VDD
VF
Body diode forward voltage drop
DISCLAIMER
* All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification standards can also be found on the Web site (http://www.semipower.com.cn)
* Suggestions for improvement are appreciated, Please send your suggestions to [email protected]
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
5/5