SW8N60B

SW8N60B
N-channel Enhanced mode TO-220F MOSFET
Features
Features
TO-220F
 High ruggedness
■ High ruggedness
 Low RDS(ON) (Typ 0.97Ω)@VGS=10V
■ RDS(ON) (Max1.25Ω)@VGS=10V
 Low Gate Charge (Typ 19nC)
■ Gate Charge (Typical 19nC)
 Improved dv/dt Capability
■ Improved dv/dt Capability
 100% Avalanche Tested
■ 100% Avalanche Tested
 Application:Adapter,LED,Charger
BVDSS : 600V
: 8A
ID
RDS(ON) :0.97Ω
2
1
2
3
1. Gate 2. Drain 3. Source
1
General Description
3
This power MOSFET is produced with advanced technology of SAMWIN.
This technology enable the power MOSFET to have better characteristics, including fast
switching time, low on resistance, low gate charge and especially excellent avalanche
characteristics.
Order Codes
Item
Sales Type
Marking
Package
Packaging
1
SW F 8N60B
SW8N60B
TO-220F
TUBE
Value
Unit
600
V
8*
A
5.04*
A
32
A
±30
V
Absolute maximum ratings
Symbol
VDSS
ID
Parameter
Drain to source voltage
Continuous drain current (@TC
=25oC)
Continuous drain current (@TC=100oC)
IDM
Drain current pulsed
VGS
Gate to source voltage
EAS
Single pulsed avalanche energy
(note 2)
426
mJ
EAR
Repetitive avalanche energy
(note 1)
56
mJ
Peak diode recovery dv/dt
(note 3)
5
V/ns
Total power dissipation (@TC=25oC)
21.8
W
Derating factor above 25oC
0.18
W/oC
-55 ~ + 150
oC
300
oC
dv/dt
PD
TSTG, TJ
TL
(note 1)
Operating junction temperature & storage temperature
Maximum Lead temperature for soldering
purpose, 1/8 from case for 5 seconds.
*. Drain current is limited by junction temperature.
Thermal characteristics
Symbol
Parameter
Value
Unit
Rthjc
Thermal resistance, Junction to case
5.72
oC/W
Rthja
Thermal resistance, Junction to ambient
45.9
oC/W
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
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SW8N60B
Electrical characteristic ( TC = 25oC unless otherwise specified )
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
Off characteristics
BVDSS
Drain to source breakdown voltage
VGS=0V, ID=250uA
ΔBVDSS
/ ΔTJ
Breakdown voltage temperature
coefficient
ID=250uA, referenced to 25oC
IDSS
Drain to source leakage current
600
V
V/oC
0.63
VDS=600V, VGS=0V
1
uA
VDS=480V, TC=125oC
50
uA
Gate to source leakage current, forward
VGS=30V, VDS=0V
100
nA
Gate to source leakage current, reverse
VGS=-30V, VDS=0V
-100
nA
4
V
1.25
Ω
IGSS
On characteristics
VGS(TH)
Gate threshold voltage
VDS=VGS, ID=250uA
RDS(ON)
Drain to source on state resistance
VGS=10V, ID=4A
0.97
Forward transconductance
VDS=30V, ID=4A
5.4
Gfs
2
S
Dynamic characteristics
Ciss
Input capacitance
Coss
Output capacitance
Crss
Reverse transfer capacitance
td(on)
Turn on delay time
tr
td(off)
tf
Qg
Rising time
Turn off delay time
930
VGS=0V, VDS=25V, f=1MHz
120
pF
11
11
VDS=300V, ID=8A，RG=25Ω
VGS=10V
(note 4,5)
24
ns
53
Fall time
30
19
Total gate charge
Qgs
Gate-source charge
Qgd
Gate-drain charge
VDS=480V, VGS=10V, ID=8A
(note 4,5)
nC
6
7
Source to drain diode ratings characteristics
Symbol
Parameter
Test conditions
Min.
Typ.
Max.
Unit
8
A
Pulsed source current
Integral reverse p-n Junction
diode in the MOSFET
32
A
Diode forward voltage drop.
IS=8A, VGS=0V
1.4
V
trr
Reverse recovery time
Qrr
Reverse recovery charge
IS=8A, VGS=0V,
dIF/dt=100A/us
IS
Continuous source current
ISM
VSD
316
ns
2.7
uC
※. Notes
1.
Repeatitive rating : pulse width limited by junction temperature.
2.
L = 13.3mH, IAS = 8A, VDD =50V, RG=25Ω, Starting TJ = 25oC
3.
ISD ≤ 8A, di/dt = 100A/us, VDD ≤ BVDSS, Staring TJ =25oC
4.
Pulse Test : Pulse Width ≤ 300us, duty cycle ≤ 2%
5.
Essentially independent of operating temperature.
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Oct. 2015. Rev. 2.0
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SW8N60B
Fig. 1. On-state characteristics
Fig. 3. Gate charge characteristics
Fig 5. Breakdown Voltage Variation
vs. Junction Temperature
Fig. 2. On-resistance variation vs.
drain current and gate voltage
Fig. 4. On state current vs. diode
forward voltage
Fig. 6. On resistance variation
vs. junction temperature
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SW8N60B
Fig. 7. Maximum safe operating area
Fig. 8. Capacitance Characteristics
Fig. 9. Transient thermal response curve
Fig. 10. Gate charge test circuit & waveform
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Oct. 2015. Rev. 2.0
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SW8N60B
Fig. 11. Switching time test circuit & waveform
VDS
RL
90%
VDS
VDD
VIN
RGS
10VIN
DUT
10%
10%
td(on)
tf
td(off)
tr
tON
tOFF
Fig. 12. Unclamped Inductive switching test circuit & waveform
Fig. 13. Peak diode recovery dv/dt test circuit & waveform
DUT
+ VDS
10V
VGS (DRIVER)
L
IS
di/dt
IS (DUT)
IRM
VDS
RG
10VGS
Diode reverse current
VDD
Diode recovery dv/dt
Same type
as DUT
VDS (DUT)
*. dv/dt controlled by RG
*. Is controlled by pulse period
VF
VDD
Body diode forward voltage drop
Copyright@ SEMIPOWER Electronic Technology Co., Ltd. All rights reserved.
Oct. 2015. Rev. 2.0
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SW8N60B
DISCLAIMER
* All the data & curve in this document was tested in XI’AN SEMIPOWER TESTING & APPLICATION CENTER.
* This product has passed the PCT,TC,HTRB,HTGB,HAST,PC and Solderdunk reliability testing.
* Qualification standards can also be found on the Web site (http://www.semipower.com.cn)
* Suggestions for improvement are appreciated, Please send your suggestions to [email protected]
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