2SC5881 Transistors Power transistor (60V, 5A) 2SC5881 zExternal dimensions (Unit : mm) 0.75 5.5 1.5 5.1 (2) (3) 0.9 0.5 0.8Min. 1.5 2.5 9.5 2.3 C0.5 0.65 2.3 (1) Base (2) Collector (3) Emitter 6.5 2.3 (1) (SC-63) <SOT-428> 0.9 CPT3 1.0 0.5 zFeatures 1) High speed switching. (Tf : Typ. : 25ns at IC = 5A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 3.0A, IB = 300mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2096 (x1 / 2) Each lead has same dimensions Symbol : C5881 zApplications Low frequency amplifier High speed switching zStructure NPN Silicon epitaxial planar transistor zPackaging specifications Taping Package Type TL Code Basic ordering unit (pieces) 2500 2SC5881 zAbsolute maximum ratings (Ta=25°C) Symbol Limits Unit VCBO 100 V VCES 100 V VCEO 60 V VEBO 6.5 V DC IC 5.0 A Pulsed ICP 10.0 A 1.0 W 10.0 W Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Power dissipation PC Junction temperature Tj 150 °C Tstg −55 to 150 °C Range of storage temperature ∗1 ∗2 ∗3 ∗1 Pw=10ms, non repetitive pulse ∗2 Ta=25°C ∗3 Tc=25°C Rev.B 1/3 2SC5881 Transistors zElectrical characteristics (Ta=25°C) Parameter Collector-base breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol BVCEO BVCES BVCBO BVEBO ICBO IEBO Min. 60 100 100 6.5 − − Typ. − − − − − − Max. − − − − 1.0 1.0 Unit V V V V µA µA Collector-emitter saturation voltage VCE (sat) − 200 400 mV hFE 120 − 390 − Collector-emitter breakdown voltage DC current gain Condition IC=1mA IC=100µA IC=100µA IE=100µA VCB=40V VEB=4V IC=3.0A IB=300mA VCE=2V IC=100mA VCE=10V IE= −100mA f=10MHz VCB=10V IE=0mA f=1MHz IC=5A IB1=500mA IB2= −500mA VCC 25V − fT − 160 Cob − 30 Transition frequency MHz − Corrector output capacitance − − − Ton Tstg Tf Turn-on time Storage time Fall time pF − − − 70 150 25 ns ns ns ∗1 ∗1 ∗2 ∗1 Non repetitive pulse ∗2 See Switching charactaristics measurement circuits zhFE RANK Q 120−270 R 180−390 zElectrical characteristic curves SWITCHING TIME : (ns) 100ms 10ms 1ms 500µs 1 DC 0.1 Single non repetitive Pulsed 0.01 0.01 0.1 1 10 100 Tf 10 0.01 100 0.1 1 100 Ta=125°C Ta=25°C Ta= −40°C 10 1 0.001 10 VCE=2V 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Safe Operating Area Fig.2 Switching Time Fig.3 DC Current Gain vs. Collector Current (Ι) 100 VCE=5V VCE=3V VCE=2V 10 1 0.001 10 Ta=25°C 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.4 DC Current Gain vs. Collector Current (ΙΙ) 10 1 0.1 0.01 0.001 10 IC / IB=10 / 1 COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) 1000 DC CURRENT GAIN : hFE Ton 1000 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR SATURATION VOLTAGE : VCE (sat) (V) COLLECTOR CURRENT : IC (A) 10 Ta=25°C VCC=25V IC / IB=10 / 1 Tstg DC CURRENT GAIN : hFE 1000 100 Ta=125°C Ta=25°C Ta= −40°C 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.5 Collector-Emitter Saturation Voltage vs. Collector Current (Ι) Ta=25°C 1 IC / IB=20 / 1 IC / IB=10 / 1 0.1 0.01 0.001 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.6 Collector-Emitter Saturation Voltage vs. Collector Current (ΙΙ) Rev.B 2/3 2SC5881 Transistors 1 Ta=125°C Ta=25°C Ta= −40°C 0.1 0.001 0.01 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR OUTPUT CAPACITANCE : Cob (pF) Ta=125°C Ta=25°C Ta= −40°C 0.1 0 0.5 1 1000 Ta=25°C VCE=10V 100 10 1.5 BASE TO EMITTER VOLTAGE : VBE (V) Fig.7 Base-Emitter Saturation Voltage vs. Collecter Current 1000 1 0.01 10 VCE=2V TRANSITION FREQUENCY : fT (MHz) 10 IC / IB=10 / 1 COLLECTOR CURRENT : IC (A) BASE EMITTER SATURATION VOLTAGE : VBE (sat) (V) 10 1 0.001 0.01 0.1 1 10 EMITTER CURRENT : IE (A) Fig.8 Grounded Emitter Propagation Characteristics Fig.9 Transition Frequency Ta=25°C f=1MHz 100 10 1 0.1 1 10 100 BASE TO COLLECTOR VOLTAGE : VCB (V) Fig.10 Collector Output Capacitance zSwitching characteristics measurement circuits RL=5Ω VIN IB1 IC VCC 25V PW IB2 PW 50 S Duty cycle ≤ 1% IB1 IB2 Base current waveform 90% IC Collector current waveform 10% Ton Tstg Tf Rev.B 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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