2SC5824 Transistor Power transistor (60V, 3A) 2SC5824 !External dimensions (Units : mm) MPT3 4.0 0.4 1.5 1.0 2.5 0.5 (1) 4.5 3.0 0.5 1.6 (2) (1)Base(Gate) (2)Collector(Drain) (3)Emitter(Sourse) !Applications NPN Silicon epitaxial planar transistor 0.4 1.5 0.4 (3) 1.5 !Features 1) High speed switching. (Tf : Typ. : 30ns at IC = 3A) 2) Low saturation voltage, typically (Typ. : 200mV at IC = 2A, IB = 200mA) 3) Strong discharge power for inductive load and capacitance load. 4) Complements the 2SA2071. Each lead has same dimensions Abbreviated symbol : UP !Structure Low frequency amplifier High speed switching !Packaging specifications Package Type Taping Code T100 Basic ordering unit (pieces) 1000 2SC5824 !Absolute maximum ratings (Ta=25°C) Parameter Symbol Limits Unit Collector-base voltage VCBO 60 V Collector-emitter voltage VCEO 60 V Emitter-base voltage VEBO 6 V Collector current IC 3 A ICP 6 A PC 500 mW PC 2.0 W Power dissipation Junction temperature Range of storage temperature Tj 150 °C Tstg −55~+150 °C ∗1 ∗2 ∗3 ∗1 Pw=100ms ∗2 Each terminal mounted on a recommended land. ∗3 Mounted on a 40x40x0.7(mm) ceramic substrate 1/3 2SC5824 Transistor !Electrical characteristics (Ta=25°C) Parameter Symbol Min. Typ. Max. Unit BVCBO 60 − − V IC=100µA Collector−emitter breakdown voltage BVCEO 60 − − V IC=1mA − V IE=100µA 1.0 µA VCB=40V Collector−base breakdown voltage Conditions BVEBO 6 − Collector cut-off current ICBO − − Emitter cut-off current IEBO − − 1.0 µA VEB=4V VCE(sat) − 200 500 mV IC=2A, IB=200mA DC current gain hFE 120 − 390 − Transition frequency fT − 200 − MHz Collector output capacitance Cob − 20 − pF VCB=10V, IE=0mA, f=1MHz Turn-on time Ton − 50 − ns Storage time Tstg − 150 − ns Fall time Tf − 30 − ns IC=3A, IB1=300mA IB2= −300mA VCC 25V ∗2 Emitter−base breakdown voltage Collector−emitter staturation voltage ∗1 VCE=2V, IC=100mA VCE=10V, IE= −100mA, f=10MHz ∗1 ∗1 Non repetitive pulse ∗2 See switching charactaristics measurement circuits !hFE RANK Q R 120-270 180-390 !Electrical characteristic curves 10 1000 1000 1 10ms DC 0.1 100 DC CURRENT GAIN : hFE Tstg SWITCHING TIME (ns) COLLECTOR CURRENT : IC (A) 1ms 100ms VCE=2V Ta=25°C VCC=25V IC/IB=10/1 Ton Tf 100 Ta= −40°C Ta=25°C Ta=100°C 10 Ta=125°C Single non repoetitive pulse 0.01 0.1 1 10 10 0.01 100 0.1 1 COLLECTOR CURRENT : IC (A) COLLECTOR EMITTER VOLTAGE : VCE (V) 1000 VCE=2V Ta=125°C 1 Ta=100°C 0.1 Ta=25°C Ta= −40°C 0.01 0.1 1 COLLECTOR CURRENT : IC (A) Fig.4 DC current gain vs. collector current 10 0.01 0.001 10 Ta=25°C COLLECTOR SATURATION VOLTAGE : VCE (sat)(V) COLLECTOR SATURATION VOLTAGE : VCE(sat)(V) DC CURRENT GAIN : hFE VCE=3V 1 10 IC/IB=10/1 VCE=5V 10 0.1 Fig.3 DC current gain vs. collector current 10 Ta=25°C 100 0.01 COLLECTOR CURRENT : IC (A) Fig.2 Switching Time Fig.1 Safe operating area 1 0.001 1 0.001 10 0.01 0.1 1 COLLECTOR CURRENT : IC (A) 10 1 0.1 0.01 0.001 IC/IB=20/1 IC/IB=10/1 0.01 0.1 1 10 COLLECTOR CURRENT : IC (A) Fig.5 Collector-emitter saturation voltage Fig.6 Collector-emitter saturation voltage vs. collector current vs. Collector Current 2/3 2SC5824 Transistor 10 1000 VCE=2V COLLECTOR CURRENT : IC (A) BASE EMITTER SATURATION VOLTAGE : VBE(sat) (V) Ta= −40°C Ta=25°C 1 Ta=125°C Ta=100°C 0.1 0.001 Ta=125°C 1 Ta=100°C Ta= −40°C Ta=25°C 0.1 0.01 0.01 0.1 1 0 10 COLLECTOR CURRENT : IC (A) 0.5 1 1.5 2 Ta=25°C VCE=10V 100 10 1 −0.001 BASE TO EMITTER VOLTAGE : VBE (V) Fig.7 Base-emitter saturation voltage vs. collector current COLLECTOR OUTPUT CAPACITANCE : CoB (pF) TRANSITION FREQUENCY : FT (MHz) 10 IC/IB=10/1 −0.01 −0.1 −1 −10 EMITTER CURRENT : IE (A) Fig.8 Ground emitter propagation characteristics Fig.9 Transition frequency 100 Ta=25°C f=1MHz 10 1 0.1 1 10 100 COLLECTOR TO BASE VOLTAGE : VCB (V) Fig.10 Collector output capacitance !Switching characteristics measurement circuits RL=8.3Ω VIN IB1 IC VCC 25V PW IB2 PW 50 S Duty cycle 1% IB1 IB2 Base current waveform 90% IC Collector current waveform 10% Ton Tstg Tf 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. ROHM CO.,LTD. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. Upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by ROHM CO., LTD. is granted to any such buyer. Products listed in this document use silicon as a basic material. Products listed in this document are no antiradiation design. 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In case of export from Japan, please confirm if it applies to "objective" criteria or an "informed" (by MITI clause) on the basis of "catch all controls for Non-Proliferation of Weapons of Mass Destruction. Appendix1-Rev1.0