EMX4 / UMX4N / IMX4 Transistors High transition frequency (dual transistors) EMX4 / UMX4N / IMX4 zExternal dimensions (Unit : mm) zFeatures 1) Two 2SC3837K chips in a EMT or UMT or SMT package. 2) High transition frequency. (fT=1.5GHz) 3) Low output capacitance. (Cob=0.9pF) (3) 0.22 (4) (5) (2) 1.2 1.6 (1) 0.5 0.13 (6) 0.5 0.5 1.0 1.6 EMX4 zEquivalent circuits EMX4 / UMX4N (3) (2) (1) (4) Each lead has same dimensions ROHM : EMT6 IMX4 (5) (6) (4) (5) (6) (3) (2) (1) 2.0 1.3 (3) 0.65 (2) (1) 0.65 (5) (6) 0.2 (4) UMX4N 1.25 0~0.1 0.1Min. zAbsolute maximum ratings (Ta=25°C) mA Collector power dissipation IC EMX4 / UMX4N IMX4 150(TOTAL) Pc 300(TOTAL) mW Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C ∗1 1.6 ∗2 2.8 ∗1 120mW per element must not be exceeded. ∗2 200mW per element must not be exceeded. 0.3Min. 1.1 50 Collector current IMX4 0.95 0.95 1.9 2.9 V 0.8 3 (1) VEBO (2) V Emitter-base voltage (3) V 20 0~0.1 30 VCEO (6) VCBO Collector-emitter voltage (5) Collector-base voltage Each lead has same dimensions ROHM : UMT6 EIAJ : SC-88 (4) Unit 0.3 Limits 0.15 Symbol Parameter 0.9 0.7 0.15 2.1 Each lead has same dimensions ROHM : SMT6 EIAJ : SC-74 zPackage, marking, and packaging specifications Type EMX4 UMX4N IMX4 Package EMT6 UMT6 SMT6 Marking X4 Code T2R X4 TR X4 T108 Basic ordering unit (pieces) 8000 3000 3000 zElectrical characteristics (Ta=25°C) Symbol Min. Typ. Max. Unit Collector-base breakdown voltage Parameter BVCBO 30 − − V IC=10µA Collector-emitter breakdown voltage BVCEO 20 − − V IC=1mA Emitter-base breakdown voltage Collector cutoff current BVEBO ICBO 3 − − − − 0.5 V µA IE=10µA VCB=15V Emitter cutoff current IEBO − − 0.5 µA DC current transfer ratio hFE 27 − 270 − VCE(sat) − − 0.5 V Transition frequency fT 1500 − MHz Output capacitance Cob 600 − 0.95 1.6 pF Collector-emitter saturation voltage Collector-base time constant Noise factor Conditions VEB=2V VCE/IC=10V/10mA IC/IB=20mA/4mA ∗ VCE/IE=10V/ −10mA, f=200MHz VCB/f=10V/1MHz, IE=0A rbb' Cc − 6 13 ps VCB=10V, IC=10mA , f=31.8MHz NF − 4.5 − dB VCE=12V, IC=2mA , f=200MHz , Rg=50Ω ∗Transition frequency of the device. Rev.A 1/3 EMX4 / UMX4N / IMX4 Transistors 200 100 50 20 0.1 0.2 0.5 1 2 5 10 20 50 Ta=25°C IC/IB=5 200 100 50 20 10 COLLECTOR TO BASE TIME CONSTANT : Cc rbb' (ps) TRANSITION FREQUENCY : fT (MHz) 2000 1000 500 200 −0.5 −1 −2 −5 −10 −20 0.5 −50 2 5 10 20 10 5 2 Ta=25°C VCE=10V f=31.8MHz 1 0.1 0.2 0.5 1 2 5 10 20 1 2 5 10 20 50 COLLECTOR CURRENT : Ic (mA) Fig.7 Insertion gain vs. collector current 2 5 10 20 50 Ta=25°C VCE=10V IC=10mA 20 15 10 5 0 50 0.1 0.2 0.5 1 2 10 Fig.6 Insertion gain vs. frequency Ta=25°C IC=2mA f=200MHz Ta=25°C VCE=12V f=200MHz NOISE FIGURE : NF(dB) 25 5 FREQUENCY : f (GHz) 2 5 1 Fig.3 Capacitance vs. reverse bias voltage Fig.5 Collector to base time constance vs. collector current INSERTION GAIN : IS21el (dB) 2 10 0.5 0.5 COLLECTOR TO BASE VOLTAGE : VCB (V) 20 30 15 0 0.1 0.2 50 COLLECTOR CURRENT : IC (mA) Ta=25°C VCE=12V f=200MHz 20 0.2 25 Fig.4 Gain bandwidth product vs. emitter current 25 Cre 50 EMITTER CURRENT : IE (mA) INSERTION GAIN : IS21el (dB) 1 Fig.2 Collector-emitter saturation voltage vs. collector current Ta=25°C VCE=10V −0.1 −0.2 0.5 COLLECTOR CURRENT : IC (mA) Fig.1 DC current gain vs. collector current 100 Cob 1.0 0.1 0.1 0.2 COLLECTOR CURRENT : IC (mA) 5000 Ta=25°C f=1MHz IE=0A 2.0 2 10 5.0 500 OUTPUT CAPACITANCE :CoB (pF) FEEDBACK CAPACITANCE :Cre (pF) Ta=25°C VCE=10V INSERTION GAIN : IS21el (dB) DC CURRENT TRANSFER RATIO :hFE 500 COLLECTOR SATURATION VOLTAGE :VCE(sat) (mV) zElectrical characteristic curves 20 15 10 20 10 5 0 0 2 4 6 8 10 12 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.8 Insertion gain vs. collector voltage 0 0.1 0.2 0.5 1 2 5 10 20 50 COLLECTOR CURRENT : IC (mA) Fig.9 Noise factor vs. collector current Rev.A 2/3 EMX4 / UMX4N / IMX4 Transistors 30 Ta=25°C IC=2mA f=200MHz NOISE FIGURE : NF(dB) 25 20 15 10 5 0 0 2 4 6 8 10 12 COLLECTOR TO EMITTER VOLTAGE : VCE (V) Fig.10 Noise factor vs. collector voltage Rev.A 3/3 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product described in this document are for reference only. Upon actual use, therefore, please request that specifications to be separately delivered. Application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. Please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. Any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. 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