AON5802B 30V Common-Drain Dual N-Channel MOSFET General Description Product Summary The AON5802B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its common-drain configuration. VDS 30V 7.2A ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V) < 19mΩ RDS(ON) (at VGS=4.0V) < 20mΩ RDS(ON) (at VGS=3.1V) < 23mΩ RDS(ON) (at VGS=2.5V) < 30mΩ Typical ESD protection HBM Class 3A DFN 2X5 D1 D2 Bottom View Top View S2 S2 G2 G1 Rg G2 Rg D1/D2 S1 S1 G1 S1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TC=25°C Pulsed Drain Current B Power Dissipation A Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient AC Maximum Junction-to-Case Rev.6. 0: July 2013 Steady-State Steady-State V A 1.6 RθJA RθJC www.aosmd.com W 1 TJ, TSTG Symbol t ≤ 10s ±12 55 PDSM TA=70°C Units V 5.6 IDM TA=25°C Maximum 30 7.2 ID TC=70°C S2 -55 to 150 Typ 30 61 4.5 °C Max 40 75 6 Units °C/W °C/W °C/W Page 1 of 5 AON5802B Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Typ Max 30 Units V VDS=30V, VGS=0V 1 µA IDSS Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS=±10V BVGSO Gate-Source Breakdown Voltage VDS=0V, IG=±250uA ±12 VGS(th) Gate Threshold Voltage VDS=VGS, ID=250µA 0.6 ID(ON) On state drain current VGS=4.5V, VDS=5V 55 VGS=4.5V, ID=7A 12 15.5 19 19 23.5 29 VGS=4.0V, ID=5A 13 16 20 mΩ VGS=3.1V, ID=5A 14 18 23 mΩ VGS=2.5V, ID=4A 17 23 30 mΩ TJ=55°C ±10 TJ=125°C RDS(ON) Static Drain-Source On-Resistance 5 V 1.1 gFS Forward Transconductance VDS=5V, ID=7A 32 Diode Forward Voltage IS=1A,VGS=0V 0.71 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance Qg(4.5V) Total Gate Charge Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime V 920 mΩ S 0.9 V 2.5 A 1150 pF VGS=0V, VDS=15V, f=1MHz 105 VGS=0V, VDS=0V, f=1MHz 1.7 2.5 KΩ 17.5 24 nC 7.5 10 pF 52 SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs 1.5 A VSD DYNAMIC PARAMETERS Ciss Input Capacitance µA VGS=10V, VDS=15V, ID=7A pF nC 2.9 nC 2.5 nC 0.32 0.42 µs VGS=10V, VDS=15V, RL=2.1Ω, RGEN=3Ω 0.55 µs 4.35 µs IF=7A, dI/dt=100A/µs 21.6 tf Turn-Off Fall Time trr Body Diode Reverse Recovery Time Qrr Body Diode Reverse Recovery Charge IF=7A, dI/dt=100A/µs µs 2.4 26 10 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the steady state thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.6. 0: July 2013 www.aosmd.com Page 2 of 5 AON5802B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 30 3.5V 4.5V VDS=5V 40 3V 20 ID(A) ID (A) 30 20 2.5V 10 10 125°C 25°C VGS=2V 0 0 0 1 2 3 4 0 5 40 2 3 4 Normalized On-Resistance 1.8 35 RDS(ON) (mΩ Ω) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note D) VDS (Volts) Fig 1: On-Region Characteristics (Note D) 30 VGS=2.5V 25 20 15 VGS=4.5V ID=7A 1.6 1.4 17 5 2 VGS=2.5V 10 I =4A 1.2 D 1 VGS=4.5V 0.8 10 0 0 5 10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note D) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note D) 50 1.0E+02 ID=7A 1.0E+01 40 1.0E+00 30 125°C IS (A) RDS(ON) (mΩ Ω) 40 1.0E-01 125°C 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 10 0 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note D) Rev.6. 0: July 2013 2 4 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note D) Page 3 of 5 AON5802B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 1600 VDS=15V ID=7A 1400 8 Capacitance (pF) VGS (Volts) 1200 6 4 Ciss 1000 800 600 400 2 Coss 200 0 0 0 5 10 15 Qg (nC) Figure 7: Gate-Charge Characteristics 20 0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 200 100.0 10µs 100µs 1ms 10ms 0.1s 1s 10s 1.0 TJ(Max)=150°C TC=25°C 0.1 DC TJ(Max)=150°C TC=25°C 160 Power (W) 10µs RDS(ON) limited 10.0 ID (Amps) Crss 17 5 2 10 120 80 40 0.0 0 0.01 0.1 1 10 VDS (Volts) VGS> or equal to 2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 100 0.0001 0.001 0.01 0.1 Pulse Width (s) 1 10 0 18 Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=75°C/W 40 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E) Rev.6. 0: July 2013 www.aosmd.com Page 4 of 5 AON5802B Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R esis tive S w itching Te st C irc uit & W av eform s RL V ds V ds DUT V gs + VD C 90 % Vdd - Rg 1 0% V gs Vgs t d(on ) tr t d (o ff) t on tf t off Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.6. 0: July 2013 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5