Datasheet

AO7417
20V P-Channel MOSFET
General Description
Product Summary
The AO7417 uses advanced trench technology to provide
excellent RDS(ON), low gate charge and operation with gate
voltages as low as 1.5V, in the small SOT363 footprint.
This device is suitable for use in buck convertor.
ID (at VGS=-4.5V)
-20V
-2A
RDS(ON) (at VGS=-4.5V)
< 80mΩ
RDS(ON) (at VGS=-2.5V)
< 100mΩ
RDS(ON) (at VGS=-1.8V)
< 125mΩ
RDS(ON) (at VGS=-1.5V)
< 150mΩ
Top View
VDS
SC-70-6
(SOT-323)
Bottom View
D
Top View
D
1
6
D
2
5
D
G
3
4
S
D
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
10 Sec
Drain-Source Voltage
VDS
-20
Gate-Source Voltage
±8
Continuous Drain
Current A
VGS
TA=25°C
ID
TA=70°C
Pulsed Drain Current B
-2
PD
TA=70°C
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Rev.1. 0: March 2013
Steady-State
Steady-State
RθJA
RθJL
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V
-1.6
A
-20
0.63
0.57
0.4
0.36
TJ, TSTG
Symbol
t ≤ 10s
Units
V
-1.9
-1.7
IDM
TA=25°C
Power Dissipation A
Steady State
-55 to 150
Typ
160
180
130
W
°C
Max
200
220
160
Units
°C/W
°C/W
°C/W
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AO7417
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Conditions
Min
ID=-250µA, VGS=0V
-20
Typ
-1
TJ=55°C
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.5
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-20
Units
V
VDS=-20V,VGS=0V
Zero Gate Voltage Drain Current
Max
µA
±100
nA
-0.65
-1
V
65
80
90
110
VGS=-2.5V, ID=-1.8A
80
100
mΩ
VGS=-1.8V, ID=-1.5A
100
125
mΩ
VGS=-1.5V, ID=-0.5A
115
150
mΩ
Forward Transconductance
VDS=-5V, ID=-2A
10
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
VGS=-4.5V, ID=-2A
TJ=125°C
RDS(ON)
gFS
Static Drain-Source On-Resistance
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
-0.7
560
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
A
VGS=-4.5V, VDS=-10V, ID=-2A
mΩ
S
-1
V
-1
A
745
pF
80
pF
70
pF
15
23
8.5
11
Ω
nC
1.2
nC
Qgd
Gate Drain Charge
2.1
nC
tD(on)
Turn-On DelayTime
7.2
ns
tr
Turn-On Rise Time
36
ns
tD(off)
Turn-Off DelayTime
53
ns
tf
Turn-Off Fall Time
56
ns
trr
Qrr
VGS=-4.5V, VDS=-10V, RL=5Ω,
RGEN=6Ω
IF=-2A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/µs
37
49
27
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The
value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using 300 µs pulse width, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1. 0: March 2013
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Page 2 of 4
AO7417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
12
20
VDS=-5V
-4.5V
-3V
10
-2.5V
16
12
-ID(A)
-ID (A)
8
-2V
8
6
4
VGS=-1.5V
125°C
2
4
25°C
0
0
0
0
1
2
3
4
-VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
5
1
1.5
2
2.5
-VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
140
1.6
Normalized On-Resistance
130
VGS=-1.5V
120
RDS(ON) (mΩ
Ω)
0.5
VGS=-1.8V
110
100
VGS=-2.5V
90
80
VGS=-4.5V
70
VGS=-4.5V
ID=-2A
1.4
17
5
VGS=-1.5V
2
ID=-0.5A
10
1.2
VGS=-1.8V
ID=-1.5A
1
0.8
60
0
2
0
4
6
8
10
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
180
10
-1.7
ID=-2A
160
1
140
40
125°C
100
0.1
-IS (A)
RDS(ON) (mΩ
Ω)
120
80
125°C
0.01
60
25°C
25°C
40
0.001
20
0.0001
0
0
2
4
6
8
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1. 0: March 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 4
AO7417
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1400
VDS=-10V
ID=-2A
1200
1000
Capacitance (pF)
-VGS (Volts)
4
3
2
800
Ciss
600
400
Coss
1
200
0
Crss
0
0
2
4
6
8
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
0
5
10
15
-VDS (Volts)
Figure 8: Capacitance Characteristics
20
100
100.0
TJ(Max)=150°C
TA=25°C
10µs
RDS(ON)
limited
100µs
1.0
1ms
10ms
0.1
100ms
TJ(Max)=150°C
TA=25°C
DC
10
Power (W)
-ID (Amps)
10.0
1
1s
10s
0.1
0.0001 0.001
0.0
0.1
1
10
0.01
0.1
1
10
100
100
-VDS (Volts)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
In descending order
-1.7
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=220°C/W
0.1
PD
0.01
Single Pulse
Ton
0.001
1E-05
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1. 0: March 2013
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