AO9926B 20V General Description Dual N-Channel MOSFET Product Summary VDS The AO9926B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a unidirectional or bi-directional load switch. ID (at VGS=10V) 20V 7.6A RDS(ON) (at VGS=10V) < 23mΩ RDS(ON) (at VGS =4.5V) < 26mΩ RDS(ON) (at VGS=2.5V) < 34mΩ RDS(ON) (at VGS=1.8V) < 52mΩ SOIC-8 Top View D1 Bottom View D2 Top View S2 1 G2 S1 G1 2 3 4 8 7 6 5 D2 D2 D1 D1 G1 G2 S1 S2 Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 3: July 2010 Steady-State Steady-State A 2 W 1.28 -55 to 150 TJ, TSTG Symbol t ≤ 10s V 38 PD TA=70°C ±12 6.1 IDM TA=25°C Power Dissipation B Units V 7.6 ID TA=70°C Maximum 20 RθJA RθJL www.aosmd.com Typ 48 74 32 °C Max 62.5 90 40 Units °C/W °C/W °C/W Page 1 of 5 AO9926B Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS= ±12V VDS=VGS ID=250µA 0.4 ID(ON) On state drain current VGS=10V, VDS=5V 38 VGS=10V, ID=7.6A TJ=125°C ±100 nA 0.75 1.1 V 16.5 23 25 30 A 18.5 26 mΩ VGS=2.5V, ID=6A 24 34 mΩ 52 mΩ VGS=1.8V, ID=2A 32 VDS=5V, ID=7.6A 25 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance mΩ VGS=4.5V, ID=7A Forward Transconductance gFS µA 5 Gate Threshold Voltage Units V 1 VGS(th) Static Drain-Source On-Resistance Max 20 VDS=20V, VGS=0V IGSS RDS(ON) Typ VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz S 1 V 2.5 A 420 525 630 pF 65 95 125 pF 45 75 105 pF 0.8 1.7 2.6 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 12.5 nC Qg(4.5V) Total Gate Charge 6 nC VGS=10V, VDS=15V, ID=7.6A Qgs Gate Source Charge 1 nC Qgd Gate Drain Charge 2 nC tD(on) Turn-On DelayTime 3 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time trr Qrr VGS=10V, VDS=15V, RL=1.3Ω, RGEN=3Ω IF=7.6A, dI/dt=100A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=7.6A, dI/dt=100A/µs 7.5 ns 20 ns 6 ns 14 ns nC 6 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: July 2010 www.aosmd.com Page 2 of 5 AO9926B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40 20 10V 3.5V 15 2.5V 4.5V ID(A) ID (A) 30 VDS=5V 20 10 1.8V 125°C 5 10 25°C VGS=3.5V 0 0 0 1 2 3 4 0 5 0.5 60 1.5 2 2.5 1.8 Normalized On-Resistance 55 50 45 RDS(ON) (mΩ ) 1 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) 40 VGS=1.8V 35 VGS=2.5V 30 25 VGS=4.5V 20 15 VGS=10V 10 0 5 VGS=4.5V ID=6A 1.6 VGS=2.5V ID=7A 1.4 17 VGS=1.8V 5 ID=2A 2 1.2 VGS=10V ID=7.6A 1 10 0.8 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 45 1.0E+02 ID=7.6A 1.0E+01 40 40 1.0E+00 30 IS (A) RDS(ON) (mΩ ) 35 125°C 25 125°C 1.0E-01 1.0E-02 25°C 1.0E-03 20 1.0E-04 25°C 1.0E-05 15 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 3: July 2010 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO9926B TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 10 VDS=10V ID=7.6A 800 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 600 400 Coss 2 200 0 0 0 5 10 Qg (nC) Figure 7: Gate-Charge Characteristics 15 Crss 0 5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics 20 10000 100.0 TA=25°C 1000 100µs Power (W) ID (Amps) 10µs RDS(ON) limited 10.0 1ms 1.0 10ms TJ(Max)=150°C TA=25°C 0.1 10s DC 100 10 0.0 1 0.01 0.1 1 10 100 0.00001 VDS (Volts) 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=90°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 3: July 2010 www.aosmd.com Page 4 of 5 AO9926B Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC DUT - Vgs Ig Charge R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds DUT Vgs 90 % + Vdd VDC - Rg 1 0% Vgs V gs t d (o n ) tr t d (o ff) to n tf t o ff D iode R ecovery T est C ircuit & W aveform s Q rr = - V ds + Idt DUT V gs V ds - Isd V gs Ig Rev 3: July 2010 L Isd + VD C - IF t rr dI/dt I RM V dd V dd V ds www.aosmd.com Page 5 of 5