Datasheet

AO4466
30V N-Channel MOSFET
General Description
Product Summary
The AO4466 uses advanced trench technology to
provide excellent RDS(ON) and low gate charge. This
device is suitable for use as a load switch or in PWM
applications. The source leads are separated to allow
a Kelvin connection to the source, which may be
used to bypass the source inductance.
VDS (V) = 30V
ID = 10A
RDS(ON) < 23mΩ
RDS(ON) < 35mΩ
(VGS = 10V)
(VGS = 10V)
(VGS = 4.5V)
100% UIS Tested
100% Rg Tested
* RoHS and Halogen-Free Compliant
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current AF
Pulsed Drain Current
Units
V
±20
V
10
TA=70°C
ID
B
64
3.1
PD
TA=70°C
A
7
IDM
TA=25°C
Power Dissipation
Maximum
30
W
2
Avalanche Current B, G
IAR
12
A
Repetitive avalanche energy 0.1mH B, G
EAR
7
mJ
Junction and Storage Temperature Range
TJ, TSTG
-55 to 150
°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A
Maximum Junction-to-Lead C
Rev.10.0: July 2013
Symbol
t ≤ 10s
Steady-State
Steady-State
RθJA
RθJL
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Typ
36
62
18
Max
40
75
24
Units
°C/W
°C/W
°C/W
Page 1 of 6
AO4466
Electrical Characteristics (TJ=25°C unless otherwise noted)
Parameter
Symbol
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
1
TJ=55°C
Gate-Body leakage current
VDS=0V, VGS= ±20V
VDS=VGS ID=250µA
1.5
On state drain current
VGS=4.5V, VDS=5V
64
VGS=10V, ID=10A
100
nA
2.1
2.6
V
16.7
23
24.3
30
35
A
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
23.7
gFS
Forward Transconductance
VDS=5V, ID=10A
17
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Coss
Output Capacitance
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
0.75
VGS=10V, VDS=15V, ID=10A
mΩ
mΩ
S
1
V
2.4
A
373
448
pF
46
67
88
pF
24
41
58
pF
0.6
1.8
2.8
Ω
5.7
7.1
8.6
nC
2.7
3.5
4.2
nC
298
VGS=0V, VDS=15V, f=1MHz
µA
5
Gate Threshold Voltage
Units
V
VDS=30 VGS=0V
VGS(th)
Crss
Max
30
IGSS
ID(ON)
Typ
1.2
nC
Qgd
Gate Drain Charge
1.6
nC
tD(on)
Turn-On DelayTime
4.3
ns
2.8
ns
15.8
ns
VGS=10V, VDS=15V, RL=1.5Ω,
RGEN=3Ω
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=10A, dI/dt=100A/µs
8.4
10.5
12.6
Qrr
3.6
4.5
5.4
trr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=100A/µs
IF=10A, dI/dt=500A/µs
Body Diode Reverse Recovery Time
4.7
6.0
7.2
Qrr
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
5.3
6.6
8
Body Diode Reverse Recovery Time
3
ns
ns
nC
ns
nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with
T A=25°C. The value in any given application depends on the user's specific board design.
B: Repetitive rating, pulse width limited by junction temperature.
C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient.
D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max.
E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
curve provides a single pulse rating.
F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating.
G: L=100uH, VDD=0V, RG=0Ω, rated VDS=30V and VGS=10V
Rev 9: May. 2012
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.10.0: July 2013
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Page 2 of 6
AO4466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
15
10V
6V
50
VDS=5V
12
9
4.5V
ID(A)
ID (A)
40
30
6
20
125°C
VGS=3.5V
3
10
0
25°C
0
0
1
2
3
4
5
1.5
VDS (Volts)
Fig 1: On-Region Characteristics
2.5
3
3.5
4
4.5
VGS(Volts)
Figure 2: Transfer Characteristics
40
Normalized On-Resistance
1.8
35
RDS(ON) (mΩ
Ω)
2
VGS=4.5V
30
25
20
VGS=10V
15
10
VGS=10V
1.6
VGS=4.5V
1.4
1.2
1
0.8
0
5
10
15
20
0
ID (A)
Figure 3: On-Resistance vs. Drain Current and
Gate Voltage
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
60
1.0E+01
ID=10A
1.0E+00
1.0E-01
40
IS (A)
RDS(ON) (mΩ
Ω)
50
125°C
1.0E-02
125°C
30
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES
AS CRITICAL
25°C
1.0E-03
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED.
AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF20
SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
1.0E-04
FUNCTIONS AND RELIABILITY WITHOUT
NOTICE.
25°C
10
1.0E-05
2
4
6
8
10
0.0
0.2
0.4
0.6
0.8
1.0
VGS (Volts)
VSD (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 6: Body-Diode Characteristics
Rev.10.0: July 2013
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Page 3 of 6
AO4466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
600
10
VDS=15V
ID=10A
500
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
400
300
200
Coss
2
100
0
0
2
4
6
Qg (nC)
Figure 7: Gate-Charge Characteristics
8
100.0
0
5
10
15
20
25
VDS (Volts)
Figure 8: Capacitance Characteristics
30
100.0
In descending order
TA=25°C, 100°C, 125°C,
RDS(ON)
limited
10µs
10.0
ID (Amps)
IA, Peak Avalanche Current (A)
Crss
0
10.0
100µs
DC
0.1
TJ(Max)=150°C
TA=25°C
0.0
1.0
1
10
100
1ms
10ms
100ms
1s
10s
1.0
1000
Time in Avalache, tA (ms)
Figure 9: Single Pulse Avalanche Capability
0.1
1
10
100
VDS (Volts)
Figure 10: Maximum Forward Biased Safe
Operating Area (Note E)
50
Power (W)
40
TJ(Max)=150°C
TA=25°C
30
20
10
0
0.0001
0.01
1
100
Pulse Width (s)
Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note E)
Rev.10.0: July 2013
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Page 4 of 6
AO4466
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
RθJA=75°C/W
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD
Single Pulse
Ton
T
0.01
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 12: Normalized Maximum Transient Thermal Impedance
Rev.10.0: July 2013
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Page 5 of 6
AO4466
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+
VDC
-
VDC
Qgs
Vds
Qgd
-
DUT
Vgs
Ig
Charge
Res istive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
+
VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
EAR= 1/2 LI
Vds
2
AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
I AR
Vdd
Id
DUT
Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds -
Isd
Vgs
Ig
Rev.10.0: July 2013
L
Isd
+
VDC
-
IF
trr
dI/dt
IRM
Vdd
Vdd
Vds
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Page 6 of 6