AO4568

AO4568
30V N-Channel AlphaMOS
General Description
Product Summary
VDS
• Trench Power AlphaMOS (αMOS LV) technology
• Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
30V
12A
ID (at VGS=10V)
Applications
RDS(ON) (at VGS=10V)
< 11.5mΩ
RDS(ON) (at VGS=4.5V)
< 17.5mΩ
100% UIS Tested
100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL
• Isolated DC/DC Converters in Telecom and Industrial
SOIC-8
Top View
D
D
D
Bottom View
D
D
G
G
S
S
S
S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AO4568
SO-8
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current G
Pulsed Drain Current
Avalanche Current C
Avalanche energy
VDS Spike
L=0.1mH
C
10µs
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev.1.0: February 2014
Steady-State
Steady-State
A
48
IAS
13
A
EAS
8
mJ
36
V
2.5
W
1.6
TJ, TSTG
Symbol
t ≤ 10s
V
9.4
PD
TA=70°C
±20
IDM
VSPIKE
TA=25°C
Units
V
12
ID
TA=70°C
C
Maximum
30
RθJA
RθJL
-55 to 150
Typ
42
70
20
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°C
Max
50
85
30
Units
°C/W
°C/W
°C/W
Page 1 of 5
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
gFS
Forward Transconductance
VDS=5V, ID=12A
1.4
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
VGS=4.5V, ID=10A
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
±100
nA
1.8
2.2
V
9.5
11.5
13.6
16.5
13.8
17.5
mΩ
mΩ
40
0.73
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
V
5
VGS=10V, ID=12A
Static Drain-Source On-Resistance
Units
1
TJ=55°C
RDS(ON)
Max
30
VDS=30V, VGS=0V
IDSS
Coss
Typ
VGS=0V, VDS=15V, f=1MHz
S
1
V
3
A
600
pF
230
pF
30
pF
1.5
2.3
Ω
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
9
15
nC
Qg(4.5V) Total Gate Charge
4.4
10
nC
Qgs
Gate Source Charge
Qgd
f=1MHz
VGS=10V, VDS=15V, ID=12A
0.7
1.4
nC
Gate Drain Charge
1.9
nC
tD(on)
Turn-On DelayTime
5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
IF=12A, dI/dt=500A/µs
Qrr
Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs
10.5
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=1.25Ω,
RGEN=3Ω
2.5
ns
17.5
ns
2.5
ns
8.6
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: February 2014
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Page 2 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
50
50
10V
4.5V
VDS=5V
4V
40
40
6V
30
ID(A)
ID (A)
30
3.5V
20
125°C
20
10
10
25°C
VGS=3V
0
0
0
1
2
3
4
0
5
1
2
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
20
1.6
Normalized On-Resistance
1.5
VGS=4.5V
RDS(ON) (mΩ
Ω)
15
10
VGS=10V
5
VGS=10V
ID=12A
1.4
1.2
VGS=4.5V
ID=10A
1
0.8
0
0
3
6
9
12
0
15
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
30
1.0E+02
ID=12A
1.0E+01
1.0E+00
20
125°C
IS (A)
RDS(ON) (mΩ
Ω)
25
15
125°C
1.0E-01
1.0E-02
10
25°C
1.0E-03
25°C
5
1.0E-04
0
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: February 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
800
VDS=15V
ID=12A
700
Ciss
8
Capacitance (pF)
VGS (Volts)
600
6
4
500
400
Coss
300
200
2
Crss
100
0
0
0
2
4
6
8
10
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
200
TJ(Max)=150°C
TA=25°C
10µs
10ms
Power (W)
ID (Amps)
1ms
DC
0.1
150
100µs
1.0
100
50
TJ(Max)=150°C
TA=25°C
0.0
0.01
30
1.5
10µs
RDS(ON)
limited
25
VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
20
0.1
1
10
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0
1E-05
100
0.001
0.1
10
1000
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=85°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: February 2014
www.aosmd.com
Page 4 of 5
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.1.0: February 2014
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5