AO4568 30V N-Channel AlphaMOS General Description Product Summary VDS • Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant 30V 12A ID (at VGS=10V) Applications RDS(ON) (at VGS=10V) < 11.5mΩ RDS(ON) (at VGS=4.5V) < 17.5mΩ 100% UIS Tested 100% Rg Tested • DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial SOIC-8 Top View D D D Bottom View D D G G S S S S Orderable Part Number Package Type Form Minimum Order Quantity AO4568 SO-8 Tape & Reel 3000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current G Pulsed Drain Current Avalanche Current C Avalanche energy VDS Spike L=0.1mH C 10µs Power Dissipation B Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev.1.0: February 2014 Steady-State Steady-State A 48 IAS 13 A EAS 8 mJ 36 V 2.5 W 1.6 TJ, TSTG Symbol t ≤ 10s V 9.4 PD TA=70°C ±20 IDM VSPIKE TA=25°C Units V 12 ID TA=70°C C Maximum 30 RθJA RθJL -55 to 150 Typ 42 70 20 www.aosmd.com °C Max 50 85 30 Units °C/W °C/W °C/W Page 1 of 5 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA gFS Forward Transconductance VDS=5V, ID=12A 1.4 VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current TJ=125°C VGS=4.5V, ID=10A Crss Reverse Transfer Capacitance Rg Gate resistance µA ±100 nA 1.8 2.2 V 9.5 11.5 13.6 16.5 13.8 17.5 mΩ mΩ 40 0.73 DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance V 5 VGS=10V, ID=12A Static Drain-Source On-Resistance Units 1 TJ=55°C RDS(ON) Max 30 VDS=30V, VGS=0V IDSS Coss Typ VGS=0V, VDS=15V, f=1MHz S 1 V 3 A 600 pF 230 pF 30 pF 1.5 2.3 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 9 15 nC Qg(4.5V) Total Gate Charge 4.4 10 nC Qgs Gate Source Charge Qgd f=1MHz VGS=10V, VDS=15V, ID=12A 0.7 1.4 nC Gate Drain Charge 1.9 nC tD(on) Turn-On DelayTime 5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time IF=12A, dI/dt=500A/µs Qrr Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs 10.5 Body Diode Reverse Recovery Time VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω 2.5 ns 17.5 ns 2.5 ns 8.6 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: February 2014 www.aosmd.com Page 2 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50 50 10V 4.5V VDS=5V 4V 40 40 6V 30 ID(A) ID (A) 30 3.5V 20 125°C 20 10 10 25°C VGS=3V 0 0 0 1 2 3 4 0 5 1 2 3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 20 1.6 Normalized On-Resistance 1.5 VGS=4.5V RDS(ON) (mΩ Ω) 15 10 VGS=10V 5 VGS=10V ID=12A 1.4 1.2 VGS=4.5V ID=10A 1 0.8 0 0 3 6 9 12 0 15 25 50 75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 30 1.0E+02 ID=12A 1.0E+01 1.0E+00 20 125°C IS (A) RDS(ON) (mΩ Ω) 25 15 125°C 1.0E-01 1.0E-02 10 25°C 1.0E-03 25°C 5 1.0E-04 0 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: February 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 800 VDS=15V ID=12A 700 Ciss 8 Capacitance (pF) VGS (Volts) 600 6 4 500 400 Coss 300 200 2 Crss 100 0 0 0 2 4 6 8 10 0 5 Qg (nC) Figure 7: Gate-Charge Characteristics 10 15 200 TJ(Max)=150°C TA=25°C 10µs 10ms Power (W) ID (Amps) 1ms DC 0.1 150 100µs 1.0 100 50 TJ(Max)=150°C TA=25°C 0.0 0.01 30 1.5 10µs RDS(ON) limited 25 VDS (Volts) Figure 8: Capacitance Characteristics 100.0 10.0 20 0.1 1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0 1E-05 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=85°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: February 2014 www.aosmd.com Page 4 of 5 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: February 2014 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5