Datasheet

AO6411
20V P-Channel AlphaMOS
General Description
Product Summary
• Trench Power AlphaMOS (αMOS LV) technology
• Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
VDS
-20V
-7A
ID (at VGS=-4.5V)
RDS(ON) (at VGS=-4.5V)
< 28.5mΩ
RDS(ON) (at VGS=-2.5V)
< 36.5mΩ
RDS(ON) (at VGS=-1.8V)
< 47 mΩ
Applications
• Load switch
• Battery protection
TSOP6
Top View
D
Bottom View
Top View
D
1
6
D
D
2
5
D
G
3
4
S
G
S
Pin1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AO6411
TSOP-6
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev.1.0: August 2015
Steady-State
Steady-State
A
2.7
W
1.7
TJ, TSTG
Symbol
t ≤ 10s
V
-28
PD
TA=70°C
±8
-5.5
IDM
TA=25°C
Power Dissipation B
Units
V
-7
ID
TA=70°C
C
Maximum
-20
RθJA
RθJL
-55 to 150
Typ
35
60
23
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°C
Max
45
75
30
Units
°C/W
°C/W
°C/W
Page 1 of 5
AO6411
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-20
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±8V
Gate Threshold Voltage
VDS=VGS, ID=-250µA
TJ=55°C
±100
nA
-0.65
-0.9
V
23.5
28.5
34
41
VGS=-2.5V, ID=-3.5A
29
36.5
mΩ
VGS=-1.8V, ID=-2.2A
36
47
mΩ
-1
V
-3.5
A
-0.3
TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-7A
23
Diode Forward Voltage
IS=-1A, VGS=0V
-0.62
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-10V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg
Total Gate Charge
Qgs
Gate Source Charge
Qgd
tD(on)
µA
-5
VSD
Coss
Units
-1
VGS=-4.5V, ID=-7A
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IDSS
RDS(ON)
Typ
S
1025
pF
167
pF
119
pF
11
Ω
13
VGS=-4.5V, VDS=-10V, ID=-7A
mΩ
18
nC
2
nC
Gate Drain Charge
3.4
nC
Turn-On DelayTime
10
ns
15
ns
85
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
Qrr
VGS=-4.5V, VDS=-10V,
RL=1.43Ω, RGEN=3Ω
40
ns
IF=-7A, di/dt=500A/µs
30
Body Diode Reverse Recovery Charge IF=-7A, di/dt=500A/µs
80
ns
nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: August 2015
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Page 2 of 5
AO6411
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
60
25
-4.5V
VDS=-5V
-4V
50
-3.5V
20
-3V
40
15
-ID (A)
-ID (A)
-2.5V
30
-2V
125°C
10
20
5
VGS=-1.5V
10
25°C
0
0
0
1
2
3
4
0
5
0.5
1.5
2
2.5
3
-VGS (Volts)
Figure 2: Transfer Characteristics (Note E)
-VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
80
Normalized On-Resistance
1.6
60
RDS(ON) (mΩ
Ω)
1
VGS=-1.8V
40
VGS=-2.5V
20
VGS=-4.5V
VGS=-2.5V
ID=-3.5A
1.4
VGS=-1.8V
ID=-2.2A
1.2
VGS=-4.5V
ID=-7A
1
0.8
0
0
2
4
6
8
0
10
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
-ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
60
1.0E+02
ID=-7A
1.0E+01
52
44
-IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
125°C
125°C
1.0E-01
25°C
1.0E-02
36
1.0E-03
28
25°C
1.0E-04
20
1.0E-05
0
2
4
6
8
10
-VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: August 2015
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0.0
0.2
0.4
0.6
0.8
1.0
-VSD (Volts)
Figure 6: Body-Diode Characteristics
(Note E)
1.2
Page 3 of 5
AO6411
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
5
1400
VDS=-10V
ID=-7A
1200
Ciss
Capacitance (pF)
-VGS (Volts)
4
3
2
1000
800
600
400
Coss
1
200
Crss
0
0
0
3
6
9
12
15
0
Qg (nC)
Figure 7: Gate-Charge Characteristics
5
10
1000
TJ(Max)=150°C
TA=25°C
10µs10µs
RDS(ON)
limited
100µs
100
1ms
1.0
10ms
DC
0.1
Power (W)
-ID (Amps)
20
-VDS (Volts)
Figure 8: Capacitance Characteristics
100.0
10.0
15
10
TJ(Max)=150°C
TA=25°C
0.0
0.01
0.1
1
10
-VDS (Volts)
VGS<or equal to -1.8V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
1
1E-05 0.0001 0.001
100
0.01
0.1
1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1
PDM
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: August 2015
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Page 4 of 5
AO6411
Gate Charge Test Circuit & Waveform
Vgs
Qg
-10V
-
-
VDC
+
VDC
Qgd
+
DUT
Qgs
Vds
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
t off
t on
td(on)
Vgs
-
DUT
Vgs
VDC
tf
td(off)
tr
90%
Vdd
+
Rg
Vgs
10%
Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
2
L
E AR= 1/2 LIAR
Vds
Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS
Vdd
Id
I AR
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vgs
Vds Isd
Vgs
Ig
Rev.1.0: August 2015
L
-Isd
+ Vdd
t rr
dI/dt
-I RM
Vdd
VDC
-
-I F
-Vds
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Page 5 of 5