Datasheet

AO4862
30V Dual N-Channel AlphaMOS
General Description
Product Summary
VDS
• Trench Power AlphaMOS (αMOS LV) technology
• Low RDS(ON)
• Low Gate Charge
• High Current Capability
• RoHS and Halogen-Free Compliant
30V
4.5A
ID (at VGS=10V)
Application
RDS(ON) (at VGS=10V)
< 50mΩ
RDS(ON) (at VGS=4.5V)
< 68mΩ
100% UIS Tested
100% Rg Tested
• System switch, inverter
SOIC-8
D1
Top View
D2
Bottom View
Top View
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
G2
S1
S2
Pin1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AO4862
SO-8
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Drain-Source Voltage
Symbol
VDS
Gate-Source Voltage
VGS
TA=25°C
Continuous Drain
Current
Pulsed Drain Current
Avalanche Current C
Avalanche energy
VDS Spike
L=0.1mH
C
10µs
Power Dissipation B
Junction and Storage Temperature Range
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Lead
Rev.1.0: May 2014
Steady-State
Steady-State
A
18
IAS
8
A
EAS
3
mJ
36
V
1.7
W
1.1
TJ, TSTG
Symbol
t ≤ 10s
V
3.5
PD
TA=70°C
±20
IDM
VSPIKE
TA=25°C
Units
V
4.5
ID
TA=70°C
C
Maximum
30
RθJA
RθJL
-55 to 150
Typ
52
80
35
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°C
Max
70
100
45
Units
°C/W
°C/W
°C/W
Page 1 of 5
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS
VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
1
TJ=55°C
1.5
±100
nA
2
2.5
V
39
50
63
78
68
RDS(ON)
Static Drain-Source On-Resistance
VGS=4.5V, ID=3A
50
gFS
Forward Transconductance
VDS=5V, ID=4.5A
10
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
0.79
DYNAMIC PARAMETERS
Input Capacitance
Ciss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz
f=1MHz
µA
5
VGS=10V, ID=4.5A
Coss
Units
30
VDS=30V, VGS=0V
IDSS
Max
mΩ
S
1
V
2
A
200
pF
35
pF
25
pF
2
3
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
4.05
10
nC
Qg(4.5V) Total Gate Charge
2
6
nC
VGS=10V, VDS=15V, ID=4.5A
1
mΩ
Ω
Qgs
Gate Source Charge
0.55
nC
Qgd
Gate Drain Charge
1
nC
tD(on)
Turn-On DelayTime
4.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
trr
Turn-Off Fall Time
15.5
ns
IF=4.5A, dI/dt=100A/µs
7.5
Qrr
Body Diode Reverse Recovery Charge IF=4.5A, dI/dt=100A/µs
2.5
ns
nC
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=3.3Ω,
RGEN=3Ω
1.5
ns
18.5
ns
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep
initialTJ=25°C.
D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with
2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: May 2014
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Page 2 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
15
10
10V
VDS=5V
4V
12
4.5V
7V
8
9
ID (A)
6
ID(A)
3.5V
6
125°C
4
3
2
VGS=3V
25°C
0
0
0
1
2
3
4
0
5
1
3
4
5
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Figure 1: On-Region Characteristics (Note E)
60
Normalized On-Resistance
2
55
RDS(ON) (mΩ)
2
VGS=4.5V
50
45
40
VGS=10V
35
1.8
VGS=10V
ID=4.5A
1.6
1.4
1.2
VGS=4.5V
ID=3A
1
0.8
30
0
2
4
6
8
0
10
25
50
75
100
125
150
175
Temperature (°C)
Figure 4: On-Resistance vs. Junction Temperature
(Note E)
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
110
1.0E+01
ID=4.5A
1.0E+00
125°C
1.0E-01
IS (A)
RDS(ON) (mΩ)
90
125°C
70
1.0E-02
1.0E-03
25°C
50
1.0E-04
25°C
30
1.0E-05
2
4
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev.1.0: May 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 5
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
300
VDS=15V
ID=4.5A
250
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
200
150
100
Coss
2
50
Crss
0
0
0
1
2
3
4
5
0
5
Qg (nC)
Figure 7: Gate-Charge Characteristics
10
15
20
25
30
VDS (Volts)
Figure 8: Capacitance Characteristics
1000
100.0
TJ(Max)=150°C
TA=25°C
10µs
10µs
ID (Amps)
RDS(ON)
limited
Power (W)
10.0
100µs
1.0
1ms
10
10ms
DC
100
0.1
TJ(Max)=150°C
TA=25°C
0.0
0.01
10s
1
1E-05
0.1
1
10
100
VDS (Volts)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
0.001
0.1
10
Pulse Width (s)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
ZθJA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=100°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: May 2014
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Page 4 of 5
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
Ig
Rev.1.0: May 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 5 of 5