AO6402 30V N-Channel MOSFET General Description Product Summary The AO6402 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device may be used as a load switch or in PWM applications. ID (at VGS=10V) VDS 30V 5A RDS(ON) (at VGS=10V) < 31mΩ RDS(ON) (at VGS =4.5V) < 43mΩ TSOP6 Top View D Bottom View Top View D D D D G S G S Pin1 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current VGS TA=25°C Pulsed Drain Current C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 8: February 2011 Steady-State Steady-State A 1.25 W 0.8 TJ, TSTG Symbol t ≤ 10s V 20 PD TA=70°C ±20 4 IDM TA=25°C Power Dissipation B Units V 5 ID TA=70°C Maximum 30 RθJA RθJL www.aosmd.com -55 to 150 Typ 82 110 56 °C Max 100 130 70 Units °C/W °C/W °C/W Page 1 of 5 AO6402 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V TJ=55°C Gate-Body leakage current VDS=0V, VGS=±20V VDS=VGS ID=250µA 1.2 ID(ON) On state drain current VGS=10V, VDS=5V 25 ±100 nA 1.8 2.4 V 25.5 31 41 50 VGS=4.5V, ID=4A 34 43 mΩ 1 V 1.5 A VGS=10V, ID=5A Static Drain-Source On-Resistance TJ=125°C A gFS Forward Transconductance VDS=5V, ID=5A 15 VSD Diode Forward Voltage IS=1A,VGS=0V 0.76 IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance µA 5 Gate Threshold Voltage Units V 1 VGS(th) Coss Max 30 VDS=30V, VGS=0V IGSS RDS(ON) Typ 255 VGS=0V, VDS=15V, f=1MHz mΩ S 310 45 pF pF 35 50 pF 3.25 4.9 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 5.2 6.3 nC Qg(4.5V) 2.55 3.2 Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime VGS=0V, VDS=0V, f=1MHz VGS=10V, VDS=15V, ID=5A VGS=10V, VDS=15V, RL=3Ω, RGEN=3Ω 1.6 0.85 nC 1.3 nC 4.5 ns 2.5 ns 14.5 ns tf Turn-Off Fall Time 3.5 ns trr Body Diode Reverse Recovery Time IF=5A, dI/dt=100A/µs 8.5 Qrr Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs 2.2 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 8: February 2011 www.aosmd.com Page 2 of 5 AO6402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 30 10V VDS=5V 7V 25 4.5V 10 20 ID(A) ID (A) 4V 15 3.5V 5 10 5 VGS=3V 0 0 0 1 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E) 1 5 1.5 2 2.5 3 3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2 Normalized On-Resistance 40 35 RDS(ON) (mΩ ) 25°C 125°C VGS=4.5V 30 25 VGS=10V 1.8 VGS=10V ID=5A 1.6 17 5 2 VGS=4.5V10 1.4 1.2 ID=4A 1 0.8 20 0 3 6 9 12 0 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E) 100 1.0E+02 ID=5A 1.0E+01 40 1.0E+00 60 IS (A) RDS(ON) (mΩ ) 80 125°C 1.0E-01 1.0E-02 125°C 25°C 1.0E-03 40 1.0E-04 25°C 1.0E-05 20 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 8: February 2011 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO6402 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400 10 VDS=15V ID=5A 350 300 Capacitance (pF) VGS (Volts) 8 6 4 Ciss 250 200 150 Coss 100 2 50 0 Crss 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 6 0 100.0 5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 TA=25°C 1000 10µs RDS(ON) limited Power (W) ID (Amps) 10.0 100µs 1.0 1ms 10ms TJ(Max)=150°C TA=25°C 0.1 100 10 10s DC 0.0 0.01 0.1 1 VDS (Volts) 10 1 100 0.00001 0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) 0.001 Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=130°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F) Rev 8: February 2011 www.aosmd.com Page 4 of 5 AO6402 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 8: February 2011 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 5 of 5