万和兴电子有限公司 www.whxpcb.com AO7417 20V P-Channel MOSFET General Description Product Summary The AO7417 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.5V, in the small SOT363 footprint. This device is suitable for use in buck convertor. ID (at VGS=-4.5V) -20V -2A RDS(ON) (at VGS=-4.5V) < 80mΩ Top View VDS RDS(ON) (at VGS=-2.5V) < 100mΩ RDS(ON) (at VGS=-1.8V) < 125mΩ RDS(ON) (at VGS=-1.5V) < 150mΩ SC-70-6 (SOT-323) Bottom View D Top View D 1 6 D 2 5 D G 3 4 S D G S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Drain-Source Voltage VDS -20 Gate-Source Voltage ±8 Continuous Drain Current A VGS TA=25°C ID TA=70°C Pulsed Drain Current B -2 PD TA=70°C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Rev.1. 0: March 2013 Steady-State Steady-State RθJA RθJL www.aosmd.com V -1.6 A -20 0.63 0.57 0.4 0.36 -55 to 150 TJ, TSTG Symbol t ≤ 10s Units V -1.9 -1.7 IDM TA=25°C Power Dissipation A Steady State Typ 160 180 130 W °C Max 200 220 160 Units °C/W °C/W °C/W Page 1 of 4 AO7417 万和兴电子有限公司 www.whxpcb.com Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -20 -1 TJ=55°C -5 IGSS Gate-Body leakage current VDS=0V, VGS=±8V Gate Threshold Voltage VDS=VGS ID=-250µA -0.5 ID(ON) On state drain current VGS=-4.5V, VDS=-5V -20 VGS=-4.5V, ID=-2A TJ=125°C Static Drain-Source On-Resistance nA -1 V 65 80 90 110 A 80 100 mΩ VGS=-1.8V, ID=-1.5A 100 125 mΩ 150 mΩ 115 10 VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Input Capacitance Ciss Crss Reverse Transfer Capacitance Rg Gate resistance Gate Source Charge Qgd tD(on) tr Turn-On Rise Time -0.7 560 VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge Qgs mΩ VGS=-2.5V, ID=-1.8A VGS=-1.5V, ID=-0.5A Output Capacitance µA ±100 VDS=-5V, ID=-2A Coss Units -0.65 Forward Transconductance gFS Max V VDS=-20V,VGS=0V VGS(th) RDS(ON) Typ VGS=-4.5V, VDS=-10V, ID=-2A S -1 V -1 A 745 pF 80 pF 70 pF 15 23 Ω 8.5 11 nC 1.2 nC Gate Drain Charge 2.1 nC Turn-On DelayTime 7.2 ns 36 ns 53 ns 56 ns tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-4.5V, VDS=-10V, RL=5Ω, RGEN=6Ω trr Body Diode Reverse Recovery Time IF=-2A, dI/dt=100A/µs 37 Qrr Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/µs 27 49 ns nC A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using 300 µs pulse width, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1. 0: March 2013 www.aosmd.com Page 2 of 4 AO7417 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 12 20 VDS=-5V -4.5V -3V 10 -2.5V 16 12 -ID(A) -ID (A) 8 -2V 8 6 4 VGS=-1.5V 125°C 2 4 25°C 0 0 0 0 1 2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 5 1 1.5 2 2.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) 140 1.6 Normalized On-Resistance 130 VGS=-1.5V 120 RDS(ON) (mΩ Ω) 0.5 VGS=-1.8V 110 100 VGS=-2.5V 90 80 VGS=-4.5V 70 VGS=-4.5V ID=-2A 1.4 17 5 VGS=-1.5V 2 ID=-0.5A 10 1.2 VGS=-1.8V ID=-1.5A 1 0.8 60 0 2 0 4 6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 180 10 -1.7 ID=-2A 160 1 140 40 125°C 100 0.1 -IS (A) RDS(ON) (mΩ Ω) 120 80 125°C 0.01 60 25°C 25°C 40 0.001 20 0.0001 0 0 2 4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1. 0: March 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 4 AO7417 万和兴电子有限公司 www.whxpcb.com TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 1400 VDS=-10V ID=-2A 1200 1000 Capacitance (pF) -VGS (Volts) 4 3 2 800 Ciss 600 400 Coss 1 200 0 Crss 0 0 2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics 10 0 5 10 15 -VDS (Volts) Figure 8: Capacitance Characteristics 20 100 100.0 TJ(Max)=150°C TA=25°C 10µs RDS(ON) limited 100µs 1.0 1ms 10ms 0.1 100ms TJ(Max)=150°C TA=25°C DC 10 Power (W) -ID (Amps) 10.0 1 1s 10s 0.1 0.0001 0.001 0.0 0.1 1 10 0.01 0.1 1 10 100 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Zθ JA Normalized Transient Thermal Resistance 10 In descending order -1.7 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=220°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 1E-05 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1. 0: March 2013 www.aosmd.com Page 4 of 4