Datasheet

AON6484
100V N-Channel MOSFET
General Description
Product Summary
The AON6484 combines advanced trench MOSFET
technology with a low resistance package to provide
extremely low RDS(ON).This device is ideal for boost
converters and synchronous rectifiers for consumer,
telecom, industrial power supplies and LED backlighting.
VDS
100V
12A
ID (at VGS=10V)
RDS(ON) (at VGS=10V)
< 79mΩ
RDS(ON) (at VGS = 4.5V)
< 90mΩ
100% UIS Tested
100% Rg Tested
DFN5X6
Top View
D
Top View
Bottom View
1
8
2
7
3
6
4
5
G
S
PIN1
Absolute Maximum Ratings TA=25°C unless otherwise noted
Parameter
Symbol
Drain-Source Voltage
VDS
Gate-Source Voltage
VGS
TC=25°C
Continuous Drain
Current G
Pulsed Drain Current
Continuous Drain
Current
C
V
A
27
3.3
IDSM
TA=70°C
±20
7.5
IDM
TA=25°C
Units
V
12.0
ID
TC=100°C
Maximum
100
A
2.7
Avalanche Current C
IAS, IAR
14
A
Avalanche energy L=0.1mH C
TC=25°C
EAS, EAR
10
mJ
Power Dissipation B
TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: Sep 2010
2
Steady-State
Steady-State
RθJA
RθJC
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W
1.3
-55 to 150
TJ, TSTG
Symbol
t ≤ 10s
W
10.0
PDSM
TA=70°C
Thermal Characteristics
Parameter
Maximum Junction-to-Ambient A
Maximum Junction-to-Ambient A D
Maximum Junction-to-Case
25.0
PD
TC=100°C
Typ
21
50
3.5
°C
Max
25
60
5
Units
°C/W
°C/W
°C/W
Page 1 of 6
AON6484
Electrical Characteristics (TJ=25°C unless otherwise noted)
Symbol
Parameter
STATIC PARAMETERS
BVDSS
Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
100
Typ
1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.6
ID(ON)
On state drain current
VGS=10V, VDS=5V
27
TJ=55°C
5
VGS=10V, ID=7.5A
nA
2.2
2.7
V
63.5
79
122
151
90
A
Static Drain-Source On-Resistance
VGS=4.5V, ID=5A
70
gFS
Forward Transconductance
VDS=5V, ID=7.5A
34
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS
Ciss
Input Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=50V, f=1MHz
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS
Qg(10V) Total Gate Charge
Qg(4.5V) Total Gate Charge
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=50V, ID=7.5A
µA
±100
RDS(ON)
Output Capacitance
Units
V
VDS=100V, VGS=0V
IDSS
Coss
Max
0.74
mΩ
mΩ
S
1
V
25
A
620
778
942
pF
38
55
81
pF
13
24
35
pF
0.7
1.45
2.2
Ω
15
19.4
24
nC
7
9.6
12
nC
2.4
3
3.6
nC
3
5
7
nC
VGS=10V, VDS=50V, RL=6.6Ω,
RGEN=3Ω
6
ns
2.5
ns
21
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=7.5A, dI/dt=500A/µs
16
23
30
Qrr
Body Diode Reverse Recovery Charge IF=7.5A, dI/dt=500A/µs
99
142
185
2.4
ns
ns
nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The
Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on
the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper
dissipation limit for cases where additional heatsinking is used.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial
TJ =25°C.
D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a
maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
G. The maximum current rating is package limited.
H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING
OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN,
FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Sep 2010
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Page 2 of 6
AON6484
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
20
20
10V
VDS=5V
4.5V
15
3.5V
ID(A)
ID (A)
15
10
10
5
5
125°C
25°C
VGS=3V
0
0
0
1
2
3
4
0
5
100
2
3
4
5
6
Normalized On-Resistance
2.8
90
VGS=4.5V
RDS(ON) (mΩ
Ω)
1
VGS(Volts)
Figure 2: Transfer Characteristics (Note E)
VDS (Volts)
Fig 1: On-Region Characteristics (Note E)
80
70
60
VGS=10V
VGS=10V
ID=7.5A
2.4
2.0
17
5
2
10
=4.5V
1.6
VGS
ID=5A
1.2
0.8
50
0
0
5
10
15
20
ID (A)
Figure 3: On-Resistance vs. Drain Current and Gate
Voltage (Note E)
25
50
75
100
125
150
175
200
0
Temperature (°C)
Figure 4: On-Resistance vs. Junction
18Temperature
(Note E)
150
1.0E+02
ID=7.5A
1.0E+01
130
40
125°C
110
IS (A)
RDS(ON) (mΩ
Ω)
1.0E+00
90
1.0E-01
125°C
1.0E-02
25°C
1.0E-03
25°C
70
1.0E-04
1.0E-05
50
2
6
8
10
VGS (Volts)
Figure 5: On-Resistance vs. Gate-Source Voltage
(Note E)
Rev 0: Sep 2010
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts)
Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AON6484
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
10
1200
VDS=50V
ID=7.5A
1000
Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
800
600
400
2
0
Coss
0
5
10
15
Qg (nC)
Figure 7: Gate-Charge Characteristics
20
0
10µs
RDS(ON)
limited
10.0
10µs
100µs
1.0
DC
40
60
80
VDS (Volts)
Figure 8: Capacitance Characteristics
100
1ms
10ms
1000
TJ(Max)=150°C
17
TC=25°C 5
100
TJ(Max)=150°C
TC=25°C
0.1
2
10
10
0.0
1
0.01
0.1
1
10
100
0.00001 0.0001 0.001
VDS (Volts)
10
0.1
1
0
10
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T
TJ,PK=TC+PDM.ZθJC.RθJC
1
0.01
Pulse Width (s)
18Junction-toFigure 10: Single Pulse Power Rating
Case (Note F)
Figure 9: Maximum Forward Biased Safe
Operating Area (Note F)
Zθ JC Normalized Transient
Thermal Resistance
20
10000
100.0
Power (W)
0
ID (Amps)
Crss
200
40
RθJC=5°C/W
0.1
PD
0.01
Ton
Single Pulse
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s)
Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Sep 2010
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Page 4 of 6
AON6484
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
IAR (A) Peak Avalanche Current
100.0
30
Power Dissipation (W)
TA=25°C
TA=100°C
10.0
TA=150°C
TA=125°C
25
20
15
10
5
1.0
0
1
10
100
Time in avalanche, tA (µ
µs)
Figure 12: Single Pulse Avalanche capability
(Note C)
1000
0
50
75
100
125
TCASE (°C)
Figure 13: Power De-rating (Note F)
150
10000
15
TA=25°C
12
1000
Power (W)
Current rating ID(A)
25
9
6
17
5
2
10
100
10
3
1
0
0
25
50
75
100
125
TCASE (°C)
Figure 14: Current De-rating (Note F)
Zθ JA Normalized Transient
Thermal Resistance
10
D=Ton/T
TJ,PK=TA+PDM.ZθJA.RθJA
1
1E-05
150
0.1
10 0
1000
Pulse Width (s) 18
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
0.001
In descending order
D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=60°C/W
0.1
PD
0.01
Single Pulse
Ton
T
0.001
1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s)
Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: Sep 2010
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Page 5 of 6
AON6484
Gate Charge Test Circuit & Waveform
Vgs
Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT
Vgs
Ig
Charge
Resistive Switching Test Circuit & Waveforms
RL
Vds
Vds
90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf
toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms
L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms
Q rr = - Idt
Vds +
DUT
Vds Isd
Vgs
Ig
Rev 0: Sep 2010
Vgs
L
Isd
+ Vdd
t rr
dI/dt
I RM
Vdd
VDC
-
IF
Vds
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Page 6 of 6