AON7430 30V N-Channel MOSFET General Description Features The AON7430 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is suitable for high side switch in SMPS and general purpose applications. VDS (V) = 30V ID = 34A (VGS = 10V) RDS(ON) < 12mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) 100% UIS Tested 100% Rg Tested DFN 3x3 EP Top View D Bottom Top View 1 8 2 7 3 6 4 5 G Pin 1 S Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Continuous Drain Current A Maximum 30 Units V ±20 V 34 TC=100°C C ID 21 IDM 80 TA=25°C A 13 A IDSM 10.2 Avalanche Current C IAR 22 A Repetitive avalanche energy L=0.1mH C TC=25°C EAR 24 mJ Power Dissipation B TA=70°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Maximum Junction-to-Case B Rev 3: Feb 2010 3.1 W 2 TJ, TSTG -55 to 150 Symbol t ≤ 10s Steady-State Steady-State W 9 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient 23 PD TC=100°C RθJA RθJC www.aosmd.com Typ 30 60 4.5 °C Max 40 75 5.4 Units °C/W °C/W °C/W Page 1 of 6 AON7430 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS= ±20V Gate Threshold Voltage On state drain current VDS=VGS ID=250µA 1.5 VGS=10V, VDS=5V 80 TJ=55°C 5 VGS=10V, ID=20A Static Drain-Source On-Resistance TJ=125°C VGS=4.5V, ID=20A 100 nA 2.5 V 10 12 16 19 13 16 mΩ 1 V 25 A A Forward Transconductance VDS=5V, ID=20A 45 VSD Diode Forward Voltage IS=1A,VGS=0V 0.7 IS Maximum Body-Diode Continuous Current Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz µA 1.9 gFS DYNAMIC PARAMETERS Ciss Input Capacitance Units V 1 Zero Gate Voltage Drain Current RDS(ON) Max 30 VDS=30V, VGS=0V IDSS ID(ON) Typ mΩ S 610 760 910 pF 88 125 160 pF 40 70 100 pF 0.8 1.6 2.4 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 11 14 17 nC Qg(4.5V) Total Gate Charge 5 6.6 8 nC 1.9 2.4 2.9 nC 1.8 3 4.2 nC Qgs Gate Source Charge Qgd Gate Drain Charge VGS=10V, VDS=15V, ID=20A tD(on) Turn-On DelayTime tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Body Diode Reverse Recovery Time IF=20A, dI/dt=500A/µs 5.6 7 8 Qrr Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 6.4 8 9.6 VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω 4.4 ns 9 ns 17 ns 6 ns ns nC A. The value of RθJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 150°C may be u sed if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 3: Feb 2010 www.aosmd.com Page 2 of 6 AON7430 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 80 30 5V 10V 4.5 VDS=5V 25 6V 60 4V 40 ID(A) ID (A) 20 15 3.5V 10 125°C 20 VGS=3V 5 25°C 0 0 0 1 2 3 4 1 5 1.5 2.5 3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics VDS (Volts) Fig 1: On-Region Characteristics 18 Normalized On-Resistance 1.8 16 RDS(ON) (mΩ ) 2 VGS=4.5V 14 12 10 VGS=10V 8 VGS=10V ID=20A 1.6 1.4 17 5 VGS=4.5V 2 ID=20A 10 1.2 1 0.8 6 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18 Temperature 35 1.0E+02 ID=20A 1.0E+01 30 40 1.0E+00 IS (A) RDS(ON) (mΩ ) 25 125°C 20 1.0E-01 125°C 1.0E-02 25°C 1.0E-03 15 1.0E-04 10 25°C 1.0E-05 5 0.0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Rev 3: Feb 2010 www.aosmd.com 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 6 AON7430 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1200 10 VDS=15V ID=20A 1000 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 400 Coss Crss 0 0 2 4 6 8 10 12 Qg (nC) Figure 7: Gate-Charge Characteristics 14 0 10µs 100.0 RDS(ON) limited 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 160 30 100µs 1ms 10ms DC 1.0 17 5 2 10 120 80 40 TJ(Max)=150°C TC=25°C 0.0 0.01 TJ(Max)=150°C TC=25°C 10µs Power (W) 10.0 0.1 5 200 1000.0 ID (Amps) 600 200 0 0.1 1 VDS (Volts) 10 100 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC 0 0.0001 0.001 0.01 0.1 1 0 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 800 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=5.4°C/W 1 PD 0.1 Ton T Single Pulse 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 3: Feb 2010 www.aosmd.com Page 4 of 6 AON7430 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 ID(A), Peak Avalanche Current 30 Power Dissipation (W) TA=25°C TA=100°C TA=150°C TA=125°C 25 20 15 10 5 0 10 1 0 10 100 1000 µs) Time in avalanche, tA (µ Figure 12: Single Pulse Avalanche capability (Note C) 25 50 75 125 150 10000 40 35 TA=25°C 1000 30 Power (W) Current rating ID(A) 100 TCASE (°C) Figure 13: Power De-rating (Note F) 25 20 15 17 5 2 10 100 10 10 5 1 0.00001 0 0 25 50 75 100 125 TCASE (°C) Figure 14: Current De-rating (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 150 0.001 0.1 10 0 1000 Pulse Width (s) 18 Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=75°C/W 0.1 PD 0.01 Single Pulse Ton 0.001 0.00001 0.0001 0.001 0.01 0.1 1 T 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 3: Feb 2010 www.aosmd.com Page 5 of 6 AON7430 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf t off Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 3: Feb 2010 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6