DIGITRON SEMICONDUCTORS 2N2417 - 2N2422, A, B SILICON UNIJUNCTION TRANSISTOR MAXIMUM RATINGS Rating Power dissipation (1) RMS emitter current Peak pulse emitter current Symbol Value Unit PD 350 mW IE 70 mA ie 2 Amps Emitter reverse voltage VB2E 60 Volts Interbase voltage VB2B1 65 Volts TJ -65 to 175 °C Tstg -65 to 175 °C (2) Operating junction temperature range Storage temperature range Note 1: Derate 2.33mW/°C increase in ambient temperature. The total power dissipation must be limited by the external circuitry. Note 2: Capacitor discharge – 10µF or less, 30 volts or less. ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise specified) Parameter Intrinsic standoff ratio (VB2B1 = 10V) (1) 2N2417, 2N2418, 2N2419, 2N2420, 2N2421, 2N2422, 2N2417A, 2N2418A, 2N2419A, 2N2420A, 2N2421A, 2N2422A, 2N2417B 2N2418B 2N2419B 2N2420B 2N2422B 2N2422B Interbase resistance (VB2B1 = 3V, IE = 0) 2N2417, 2N2418, 2N2419, 2N2420, 2N2421, 2N2422, 2N2417A, 2N2418A, 2N2419A, 2N2420A, 2N2421A, 2N2422A, 2N2417B 2N2418B 2N2419B 2N2420B 2N2422B 2N2422B Symbol Min Typ Max Unit η 0.51 0.51 0.56 0.56 0.62 0.62 - 0.62 0.62 0.68 0.68 0.75 0.75 - rBB 4.7 6.2 4.7 6.2 4.7 6.2 - 6.8 9.1 6.8 9.1 6.8 9.1 kohms - 3.5 - - 15 - - - 2 - - 2 - - 0.2 - - 12 - - 12 - - 6 8 - - - - - 3 - - 3 - - Emitter saturation voltage (VB2B1 = 10V, IE = 50mA)(2) VEB1(sat) Modulated interbase current (VB2B1 = 10V, IE = 50mA) IB2(mod) VB2E = 60V Emitter reverse current (IB1 = 0) VB2E = 60V VB2E = 30V Peak point emitter current (VB2B1 = 25V) 2N2417, 2N2418, 2N2419, 2N2420, 2N2421, 2N2422 2N2417A, 2N2418A, 2N2419A, 2N2420A, 2N2421A, 2N2422A 2N2417B, 2N2418B, 2N2419B, 2N2420B, 2N2421B, 2N2422B 2N2417, 2N2418, 2N2419, 2N2420, 2N2421, 2N2422 2N2417A, 2N2418A, 2N2419A, 2N2420A, 2N2421A, 2N2422A 2N2417B, 2N2418B, 2N2419B, 2N2420B, 2N2421B, 2N2422B Valley point current (VB2B1 = 20V, RB2 = 100ohms)(2) Base-one peak pulse voltage(3) IEB2O IEB2O IV 2N2417, 2N2418, 2N2419, 2N2420, 2N2421, 2N2422 2N2417A, 2N2418A, 2N2419A, 2N2420A, 2N2421A, 2N2422A 2N2417B, 2N2418B, 2N2419B, 2N2420B, 2N2421B, 2N2422B VOB1 Note 1: Intrinsic standoff voltage: η = VP-VF/VB2B1, where VP = peak point emitter voltage , VB2B1 = interbase voltage, VF = emitter to base one junction diode drop (≈ 0.45V @ 10µA). Note 2: PW ≈ 300µs, duty cycle ≤ 2% to avoid internal heating due to interbase modulation which may result in erroneous readings Note 3: Base one peak pulse voltage is used to ensure minimum pulse amplitude for applications in SCR firing circuits and other types of pulse circuits. 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20121019 Volts mA µA µA mA V DIGITRON SEMICONDUCTORS 2N2646, 2N2647 SILICON UNIJUNCTION TRANSISTOR Available Non-RoHS (standard) or RoHS compliant (add PBF suffix). Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number. 144 Market Street Kenilworth NJ 07033 USA phone +1.908.245-7200 fax +1.908.245-0555 [email protected] www.digitroncorp.com Rev. 20121019