2SC4511 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1725) V(BR)CEO IC 6 A hFE VEB=6V 10max µA IC=25mA 80min V VCE=4V, IC=2A 50min∗ 10.1±0.2 3 A VCE(sat) IC=2A, IB=0.2A 0.5max V PC 30(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 110typ pF –55 to +150 °C ∗hFE Rank Tstg 1.35±0.15 1.35±0.15 O(50 to100), P(70 to140), Y(90 to180) 0.3 A 1 m 00 A A 80m Collector Current I C (A) 5 50 mA 4 3 30mA 2 20mA I B =10mA 1 0 0 1 2 3 0.34typ I C – V BE Temperature Characteristics (Typical) 2 1 2A 0 0 0.5 1.0 0 1 θ j-a – t Characteristics h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 50 1 100 25˚C –30˚C 50 20 0.02 56 Transient Thermal Resistance DC Cur rent Gain h FE Typ 0.1 Collector Current I C (A) 0.5 1 56 5 1 0.5 0.4 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 Base-Emittor Voltage V B E (V) 125˚C Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 30 20 10 10 si nk 0.1 at Without Heatsink Natural Cooling he 0.5 ite 1 20 fin Collector Curre nt I C ( A) s In 10 0m ith 20 DC W Typ s 10 5 30 m M aximum Power Dissipa ti on P C (W) 40 Cu t-off Fre quen cy f T (M H Z ) DC Curr ent Gain h F E 0 1.5 Base Current I B (A) 300 0.5 2 I C =6A (V C E =4V) 0.1 4 4A 4 h FE – I C Characteristics (Typical) 30 0.02 (V CE =4V) 6 3 Collector-Emitter Voltage V C E (V) 100 B C E ˚C ( 15 0m Collector-Emitter Saturation Voltage V C E (s at) (V ) 20 A 2.60typ V CE ( sat ) – I B Characteristics (Typical) 6 0m 0.16typ –0.3 Weight : Approx 2.0g a. Part No. b. Lot No. tf (µs) tstg (µs) 125 I C – V CE Characteristics (Typical) ton (µs) IB2 (A) Cas e Te mp (Cas e Tem ) p) –5 10 3 IB1 (A) Collector Current I C (A) 10 30 VBB2 (V) VBB1 (V) IC (A) 2.4±0.2 2.2±0.2 θ j- a ( ˚C/W) RL (Ω) 0.85 +0.2 -0.1 0.45 +0.2 -0.1 2.54 2.54 ■Typical Switching Characteristics (Common Emitter) VCC (V) ø3.3±0.2 a b 13.0min IB 4.2±0.2 2.8 c0.5 4.0±0.2 IEBO V µA 0.8±0.2 V 6 10max ±0.2 80 VEBO Unit VCB=120V ) VCEO Conditions Temp ICBO (Case V –30˚C Unit 120 25˚C Ratings VCBO Symbol External Dimensions FM20(TO220F) (Ta=25°C) Ratings 3.9 Symbol 8.4±0.2 ■Electrical Characteristics 16.9±0.3 ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 10 Without Heatsink 2 0 –0.02 –0.1 –1 Emitter Current I E (A) –6 0.05 3 5 10 50 Collector-Emitter Voltage V C E (V) 100 0 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 111