2SC4468 Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695) 10max µA V IEBO VEB=6V 10max µA V V(BR)CEO 10 A hFE 140min IC=50mA V 50min∗ VCE=4V, IC=3A A VCE(sat) IC=5A, IB=0.5A 0.5max V 100(Tc=25°C) W fT VCE=12V, IE=–0.5A 20typ MHz Tj 150 °C COB VCB=10V, f=1MHz 250typ pF –55 to +150 °C 20.0min 4 PC ∗hFE Rank ø3.2±0.1 b IB Tstg a 2 3 O(50 to100), P(70 to140), Y(90 to180) 1.05 +0.2 -0.1 ■Typical Switching Characteristics (Common Emitter) 5.45±0.1 VCC (V) RL (Ω) IC (A) VBB1 (V) VBB2 (V) IB1 (A) IB2 (A) ton (µs) tstg (µs) tf (µs) 60 12 5 10 –5 0.5 –0.5 0.24typ 4.32typ 0.40typ 4 20mA 2 I B =10mA 0 0 1 2 3 1 2 I C =10A 0 4 0 0.5 1.0 1.5 h FE – I C Temperature Characteristics (Typical) (V C E =4V) 200 Typ 100 50 1 5 125˚C 25˚C 100 –30˚C 50 20 0.02 10 Transient Thermal Resistance DC Curr ent Gain h FE 300 0.5 0 1 0.1 Collector Current I C (A) 0.5 1 5 10 θ j-a – t Characteristics 3 1 0.5 0.1 1 10 100 1000 2000 Time t(ms) Collector Current I C (A) f T – I E Characteristics (Typical) 2 Base-Emittor Voltage V B E (V) (V C E =4V) Safe Operating Area (Single Pulse) P c – T a Derating (V C E =12V) 100 30 3m s 10 100 Collector-Emitter Voltage V C E (V) 200 Collector Curre nt I C ( A) nk 50 si 10 50 at 5 he 0.1 3 ite Without Heatsink Natural Cooling fin Emitter Current I E (A) –10 0.5 In –1 1 ith –0.1 s 0 –0.02 ms 10 10 20 DC 5 0m Typ 10 30 W M aximum Power Dissipa ti on P C (W) 40 Cut- off F req uency f T (M H Z ) DC Cur rent Gain h FE 0 2.0 Base Current I B (A) h FE – I C Characteristics (Typical) 0.1 4 5A Collector-Emitter Voltage V C E (V) 20 0.02 6 (Case 50 mA 2 25˚C 75 m A 6 8 mp) A e Te 100m (V C E =4V) 10 3 Cas Collector Current I C (A) 8 mA ˚C ( 150 125 A Collector Current I C (A) 2 m 00 1.4 E I C – V BE Temperature Characteristics (Typical) θ j - a (˚C /W) 30 A 0m C Weight : Approx 6.0g a. Part No. b. Lot No. V CE ( sat ) – I B Characteristics (Typical) Collector-Emitter Saturation Voltage V C E (s at) (V ) 40 0m A 10 0.65 +0.2 -0.1 5.45±0.1 B I C – V CE Characteristics (Typical) 2.0±0.1 Temp) 6 IC ) VEBO 4.8±0.2 (Case 140 Temp VCEO 15.6±0.4 9.6 –30˚C V 1.8 VCB=200V 200 5.0±0.2 ICBO VCBO 2.0 Unit Symbol External Dimensions MT-100(TO3P) (Ta=25°C) Ratings Unit 4.0 ■Electrical Characteristics Conditions Ratings 19.9±0.3 Symbol 4.0max ■Absolute maximum ratings (Ta=25°C) Application : Audio and General Purpose 3.5 0 Without Heatsink 0 25 50 75 100 125 150 Ambient Temperature Ta(˚C) 109