SANKEN 2SC4468_01

2SC4468
Silicon NPN Triple Diffused Planar Transistor (Complement to type 2SA1695)
10max
µA
V
IEBO
VEB=6V
10max
µA
V
V(BR)CEO
10
A
hFE
140min
IC=50mA
V
50min∗
VCE=4V, IC=3A
A
VCE(sat)
IC=5A, IB=0.5A
0.5max
V
100(Tc=25°C)
W
fT
VCE=12V, IE=–0.5A
20typ
MHz
Tj
150
°C
COB
VCB=10V, f=1MHz
250typ
pF
–55 to +150
°C
20.0min
4
PC
∗hFE Rank
ø3.2±0.1
b
IB
Tstg
a
2
3
O(50 to100), P(70 to140), Y(90 to180)
1.05 +0.2
-0.1
■Typical Switching Characteristics (Common Emitter)
5.45±0.1
VCC
(V)
RL
(Ω)
IC
(A)
VBB1
(V)
VBB2
(V)
IB1
(A)
IB2
(A)
ton
(µs)
tstg
(µs)
tf
(µs)
60
12
5
10
–5
0.5
–0.5
0.24typ
4.32typ
0.40typ
4
20mA
2
I B =10mA
0
0
1
2
3
1
2
I C =10A
0
4
0
0.5
1.0
1.5
h FE – I C Temperature Characteristics (Typical)
(V C E =4V)
200
Typ
100
50
1
5
125˚C
25˚C
100
–30˚C
50
20
0.02
10
Transient Thermal Resistance
DC Curr ent Gain h FE
300
0.5
0
1
0.1
Collector Current I C (A)
0.5
1
5
10
θ j-a – t Characteristics
3
1
0.5
0.1
1
10
100
1000 2000
Time t(ms)
Collector Current I C (A)
f T – I E Characteristics (Typical)
2
Base-Emittor Voltage V B E (V)
(V C E =4V)
Safe Operating Area (Single Pulse)
P c – T a Derating
(V C E =12V)
100
30
3m
s
10
100
Collector-Emitter Voltage V C E (V)
200
Collector Curre nt I C ( A)
nk
50
si
10
50
at
5
he
0.1
3
ite
Without Heatsink
Natural Cooling
fin
Emitter Current I E (A)
–10
0.5
In
–1
1
ith
–0.1
s
0
–0.02
ms
10
10
20
DC
5
0m
Typ
10
30
W
M aximum Power Dissipa ti on P C (W)
40
Cut- off F req uency f T (M H Z )
DC Cur rent Gain h FE
0
2.0
Base Current I B (A)
h FE – I C Characteristics (Typical)
0.1
4
5A
Collector-Emitter Voltage V C E (V)
20
0.02
6
(Case
50 mA
2
25˚C
75 m A
6
8
mp)
A
e Te
100m
(V C E =4V)
10
3
Cas
Collector Current I C (A)
8
mA
˚C (
150
125
A
Collector Current I C (A)
2
m
00
1.4
E
I C – V BE Temperature Characteristics (Typical)
θ j - a (˚C /W)
30
A
0m
C
Weight : Approx 6.0g
a. Part No.
b. Lot No.
V CE ( sat ) – I B Characteristics (Typical)
Collector-Emitter Saturation Voltage V C E (s at) (V )
40
0m
A
10
0.65 +0.2
-0.1
5.45±0.1
B
I C – V CE Characteristics (Typical)
2.0±0.1
Temp)
6
IC
)
VEBO
4.8±0.2
(Case
140
Temp
VCEO
15.6±0.4
9.6
–30˚C
V
1.8
VCB=200V
200
5.0±0.2
ICBO
VCBO
2.0
Unit
Symbol
External Dimensions MT-100(TO3P)
(Ta=25°C)
Ratings
Unit
4.0
■Electrical Characteristics
Conditions
Ratings
19.9±0.3
Symbol
4.0max
■Absolute maximum ratings (Ta=25°C)
Application : Audio and General Purpose
3.5
0
Without Heatsink
0
25
50
75
100
125
150
Ambient Temperature Ta(˚C)
109