Reliability Report

AOS Semiconductor
Product Reliability Report
AOZ8170DT, rev A
Plastic Encapsulated Device
ALPHA & OMEGA Semiconductor, Inc
www.aosmd.com
1
This AOS product reliability report summarizes the qualification result for AOZ8170DT.
Review of the electrical test results confirm that AOZ8170DT pass AOS quality and reliability
requirements for product release. The continuous qualification testing and reliability monitoring program
ensure that all outgoing products will continue to meet AOS quality and reliability standards.
Table of Contents:
I.
II.
III.
IV.
V.
Product Description
Package and Die information
Qualification Test Requirements
Qualification Tests Result
Reliability Evaluation
I. Product Description:
The AOZ8170DT is an 8-line device integrating EMI filtering with ESD protection for each line. It is designed to
suppress unwanted EMI/RFI signals and provide electrostatic discharge (ESD) protection in portable electronic
equipment. This state-of-the-art device utilizes AOS leading edge Trench Vertical Structure [TVS]2™ technology for
superior clamping performance and filter attenuation over the full operating display range. The
AOZ8170DT has been optimized for protection of color LCD displays and CCD camera lines in cellular phones and
other portable consumer electronic devices.
-ROHS compliant
-Halogen free
.
Absolute Maximum Ratings
Parameter
VP-VN
Storage Temperature (TS)
ESD Rating per IEC61000-4-2, contact
(2)
ESD Rating per IEC61000-4-2, air
ESD Rating per Human Body Model (2)
Junction Temperature (Tj)
5v
-65°C to +150°C
±15kV
±15kV
±30kV
-40°C to +85°C
(1)
Notes:
(1) IEC-61000-4-2 discharge with CDischarge=150pF, RDischarge=330Ω8
(2) Human Body Discharge per MIL-STD-883, Method 3015 CDischarge=100pF, RDischarge=1.5kΩ
II. Package and Die Information:
Product ID
Process
Package Type
Lead Frame
Die attach material
Bond wire
MSL level
AOZ8170DT
HV041A1
DFN 4x1.6
Cu ,NiPdAu
84-1LMISR4
Au, 1 mil
Up to Level 1
2
III. Qualification Tests Requirements
•
•
5 lot of AOZ8170DT up to 168hrs of HTRB for new product release.
8 lots of package qual testing (PCT, 500 cycles TC, HAST) for package release to manufacturing.
IV. Qualification Tests Result
Test Item
Test Condition
Sample Size
Result Comment
PreConditioning
Per JESD 22-A113
168hrs @85 °C
/85%RH+3 cyc
reflow@260°C
8 lots (Sum of
TC,PCT and
HAST)
pass
HTRB
Per JESD 22-A108_B
Vdd= 4v
Temp = 150°C
5 lots (77 /lot)
pass
Temperature
Cycle
'-65 °C to +150 °C,
air to air (2cyc/hr)
8 lots (77 /lot)
pass
Pressure Pot
121°C, 29.7psi,
RH= 100%
8 lots (77 /lot)
pass
HAST
'130 +/- 2°C, 85%RH,
33.3 psi, at VCC min
power dissipation.
8 lot (55 /lot)
pass
ESD Rating
Per IEC-61000-4-2,
contact
3 lots (5 /lot)
pass
±15kV contact
ESD Rating
Per IEC-61000-4-2, air
discharge
3 lots (5 /lot)
pass
±15kV contact
The qualification test results confirm that AOZ8170DT pass AOS quality and reliability
requirements for product release.
3
V. Reliability Evaluation
FIT rate (per billion): 55
MTTF = 2082 years
The presentation of FIT rate for the individual product reliability is restricted by the actual HTRB sample size of the
selected product itself and its generic family. Failure Rate Determination is based on JEDEC Standard JESD 85.
FIT means one failure per billion device hours.
2
9
Failure Rate = Chi x 10 / [2 (N) (H) (Af)] = 1.83 x 10
9
7
MTTF = 10 / FIT = 1.82 x10 hrs= 2082 years
9
/ [2x5x77x168x258] = 55
Chi² = Chi Squared Distribution, determined by the number of failures and confidence interval
N = Total Number of units from HTRB tests
H = Duration of HTRB testing
Af = Acceleration Factor from Test to Use Conditions (Ea = 0.7eV and Tuse = 55°C)
Acceleration Factor [Af] = Exp [Ea / k (1/Tj u – 1/Tj s)]
Acceleration Factor ratio list:
55 deg C
70 deg C
85 deg C
100 deg C
115 deg C
Af
258
87
32
13
5.64
Tj s = Stressed junction temperature in degree (Kelvin), K = C+273.16
Tj u =The use junction temperature in degree (Kelvin), K = C+273.16
k = Boltzmann’s constant, 8.617164 X 10-5eV / K
4
130 deg C
150 deg C
2.59
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